GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Starting from the growth of high-quality 1.3 mu m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 mu m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 mu m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 mu m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 mu m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm(2) with as-cleaved facet mirrors. (c) 2005 American Institute of Physics.

Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors

High-quality InAsxSb1-x (0 < x <= 0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2x10(4) cm(2) V-1 s(-1) and cutoff wavelengths longer than 10 mu m at room temperature (RT). Photoconductors are fabricated from the films, and notable photoresponses beyond 8 mu m are observed at RT. In particular, for an InAs0.3Sb0.7 film, a photoresponse of up to 13 mu m with a maximum responsivity of 0.26 V/W is obtained at RT. Hence, the InAsxSb1-x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors. (c) 2006 American Institute of Physics.

Room-temperature ferromagnetism in zinc-blende and deformed CrAs thin films

We try to clarify the controversy about the origin of room-temperature ferromagnetism in a CrAs compound. Two kinds of CrAs thin films were grown on GaAs by molecular-beam epitaxy. Structural analyses confirm that the as-grown CrAs film is a pure zinc-blende phase. Magnetic measurements suggest that room-temperature ferromagnetism exists in zinc-blende CrAs. In contrast, the CrAs film turns into a mixture of zinc-blende and deformed CrAs after annealing. A ferromagnetic signal measured at room temperature demonstrates that zinc-blende CrAs remains room-temperature ferromagnetism even when it is partly deformed into a non-zinc-blende phase. (c) 2006 American Institute of Physics.

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 degreesC. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560 degreesC have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9 kA/cm(2), significantly better than previously reported values for this quantum-dot systems. (C) 2002 American Institute of Physics.

Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy

Self-assembled InAs nanostructures on (0 0 1)InP substrate have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL). It is found that the morphologies of InAs nanostructures depend strongly on the underlying alloy. Through introducing a lattice-matched underlying InAlGaAs layer on InAlAs buffer layer, the InAs quantum dots (QDs) can be much more uniform in size and great improvement in PL properties can be attained at the same time. In particular, 1.55 mu m luminescence at room temperature (RT) can be realized in InAs QDs deposited on (0 0 1)InP substrate with underlying InAlGaAs layer. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

A study on strong room temperature photoluminescence of a-SiNx : H films

Photoluminescence measurements have been performed in Si-rich a-SiNx:H (x less than or equal to 1.3) alloys prepared by glow discharge. It is observed that the blue shift of the peak of room temperature luminescence spectrum with increasing N content parallels increasing intensity. Two distinct luminescence mechanisms are proposed in a-SiNx:H with the threshold near x = 0.8. For low x, the samples show typical luminescence properties of a-Si:H, while for high x, the normalized luminescence bands are independent of temperature. Combining percolation theory, the luminescence origins are discussed on the basis of Brodsky's quantum well model. (C) 2000 Elsevier Science B.V. All rights reserved.

Room-Temperature Ferromagnetism in Co-Doped In2O3 Nanocrystals

Co-doped In2O3 nanocrystals showing room-temperature ferromagnetism have been successfully prepared by a simple sol-gel synthesis route. The sample displays it clear ferromagnetism behavior above 300 K. Phase and structure analyses reveal that the nanocrystals are crystallized with Co ions substituted for In ions in the In2O3 matrix, and no trace of secondary phases or clusters is detected. The experimental results are explained theoretically by first-principles calculations based on density functional theory, which indicate that the native ferromagnetic behavior of Co-doped In2O3 could be mainly ascribed to the strong d-d coupling of the magnetic ions.

Application of room temperature ionic liquid-based extraction for metal ions

As a kind of novel green solvent, Room Temperature Ionic Liquids (RTILs) have been paid ever-increasing attentions in RTIL-based extraction for metal separation, since they have many unique proper-ties, such as non-volatile and non-flammable. The progress of that is mainly composed of the partition properties, mechanisms, defects, overcome methods and forecasts of the processes on the environmental analytical chemistry, has been reviewed.

Room temperature ionic liquid doped DNA network immobilized horseradish peroxidase biosensor for amperometric determination of hydrogen peroxide

A novel electrochemical H2O2 biosensor was constructed by embedding horseradish peroxide (HRP) in a 1-butyl-3-methylimidazolium tetrafluoroborate doped DNA network casting on a gold electrode. The HRP entrapped in the composite system displayed good electrocatalytic response to the reduction of H2O2. The composite system could provide both a biocompatible microenvironment for enzymes to keep their good bioactivity and an effective pathway of electron transfer between the redox center of enzymes, H2O2 and the electrode surface. Voltammetric and time-based amperometric techniques were applied to characterize the properties of the biosensor. The effects of pH and potential on the amperometric response to H2O2 were studied. The biosensor can achieve 95% of the steady-state current within 2 s response to H2O2. The detection limit of the biosensor was 3.5 mu M, and linear range was from 0.01 to 7.4 mM. Moreover, the biosensor exhibited good sensitivity and stability. The film can also be readily used as an immobilization matrix to entrap other enzymes to prepare other similar biosensors.

Coating Gd2O3 : Eu phosphors with silica by solid-state reaction at room temperature

Silica coating on Gd2O3:Eu particles was obtained by a simple method, e.g. solid-state reaction at room temperature. The urea homogeneous precipitation method was used to synthesize the Gd2O3:Eu cores. Transmission electron microscopy (TEM) shows that the core particles are spherical with submicrometer size which is the soft agglomerates with nanometer crystallites. The TEM morphology of coated particles shows that a thin film is coated on the surface of Gd2O3:Eu cores. Scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS) analysis indicate that the coating of silica can be used to avoid agglomeration of Gd2O3:Eu particles to obtain smaller particles. X-ray photoelectron spectra (XPS) show that silica is coated on the surface of core particles by forming the chemical bond. Photoluminescence (PL) spectra conform that Gd2O3:Eu phosphors remain well-luminescent properties by the silica coating.

A room-temperature ionic-liquid-templated proton-conducting gelatinous electrolyte

Novel proton-conducting gelatinous electrolytes templated by room-temperature ionic liquid (RTIL) 1-butyl-3-methyl-imidazolium-tetrafluoroborate (BMImBF(4)) have been prepared in methylsisesquioxane backbone containing H3PO4, and the influences of the RTIL on the structure, morphology, thermal stability, and electrochemical properties of the gelatinous electrolytes have been examined. X-ray diffraction and scanning electron microscopy proved that BMImBF(4) acted as structure-directing template during the sol-gel process of methyl-trimethoxysilane. X-ray photoelectron spectra and infrared spectroscopy demonstrated that the hydrogen-bonding was formed between BMImBF(4) and H3PO4. The electrolytes had good thermal stability up to 300 degreesC and showed superior mechanical and electrochemical properties. A room-temperature conductivity of 1.2 x 10(-3) S cm(-1) was obtained for the electrolyte at the molar ratio of RTIL/Si/H3PO4 0.3/1/1, and its electrochemical window was up to 1.5 V.

Photoluminescence of aggregated C-60 in nano-size at room temperature

When the aggregation of C-60 is arranged in mono-dispersed state on the ITO substrate, the photoluminescence (PL) spectra are observed clearly. These emission peaks are attributed to recombination of self - trapped excitons, the zero-phonon exciton (R-0) and its phonon replicas.

Comblike polymer electrolyte with main chain glass transition near room temperature

A new amorphous comblike polymer (CBP) based on methylvinyl ether/maleic anhydride altering copolymer backbone and on oligooxyethylene side chain was synthesized. The dynamic mechanical properties of CBP and its Li salt complexes were investigated by means of DDV-11-EA type viscoelastic spectrometry. Results showed that there were two glass transitions (alpha-transition and beta-transition) in the temperature range from -100 to 100 degrees C. The beta-transition was assigned to oligo-PEO side chains and the temperature of beta-transition increases with increasing Li salt content. The alpha-transition was assigned to the main chain of CBP. The temperature of the alpha-transition (T-alpha) is also dependent upon the Li-salt content, but not monotonic. The value of T-alpha lies between 30-45 degrees C in the Li salt concentration range studied, near room temperature. It was found that the CBP-Li salt complexes showed an unusual dependence of ionic conductivity on Li salt content. There are two peaks in the plot of the ionic conductivity vs. Li salt concentration, which has been ascribed to the movability of the CBP main chain at ambient temperature. The temperature dependence bf the ionic conductivity indicated that the Arrhenius relationship was not obeyed, and the plot of log sigma against 1/(T - T-0) showed the unusual dual VTF behavior when using side chain glass transition temperature (T-beta) as T-0.

Indentation Creep Behavior in Ce-Based Bulk Metallic Glasses at Room Temperature

The room temperature creep behaviors of Ce-based bulk metallic glasses were examined by the use of nanoindentation. The creep rate and creep rate sensitivity of Ce-based BMGs were derived from indentation creep curves. The low creep rate sensitivity of Ce-based BMGs indicates that the room temperature creep is dominated by localized shear flow. The experimental creep curves can be described by a generalized Kelvin model. Furthermore, the creep retardation spectrum is calculated for the Ce-based metallic glasses. The results showed that creep retardation spectrum consists of two relatively separated peaks with the well defined characteristic relaxation times.

Mn implanted GaAs by low energy ion beam deposition

High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.