36 resultados para Quality of modernized data
Resumo:
Simultaneous tone-tone masking in conjunction with the envelope-following response (EFR) recording was used to obtain tuning curves in porpoises Phocoena phocoena and Neophocaena phocaenoides asiaeorientalis. The EFR was evoked by amplitude-modulated probes with a modulation rate of 1000 Hz and carrier frequencies from 22.5 to 140 kHz. Equivalent rectangular quality Q(ERB) of the obtained tuning curves varied from 8.3-8.6 at lower (22.5-32 kHz) probe frequencies to 44.8-47.4 at high (128-140 kHz) frequencies. The QERB dependence on probe frequency could be approximated by regression lines with a slope of 0.83 to 0.86 in log-log scale., which corresponded to almost frequency-proportional quality and almost constant bandwidth of 34 kHz. Thus, the frequency representation in the porpoise auditory system is much closer to a constant-bandwidth rather that to a constant-quality manner. (c) 2006 Acoustical Society of America.
Resumo:
The effect of the growth temperature on the surface and interface quality for the GaN/AlN multiquantum well (MQW) layer grown by metal-organic vapour chemical deposition is investigated. The obtained GaN/AlN MQW structure is almost coherent to the underlying AlGaN layer at improved growth conditions. With a relatively low growth temperature, the GaN/AlN MQW growth rate increases, the surface roughness reduces considerably and no macro steps are observed, resulting in a better periodicity of MQW.
Resumo:
GaN epilayers on sapphire substrate grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal-type low-pressure two-channel reactor were investigated. Samples were characterized by X-ray diffraction (XRD), Raman scattering, atomic force microscopy (AFM) and photoluminescence (PL) measurements. The influence of the temperature changes between low temperature (LT) deposited GaN buffer and high temperature (WT) grown GaN epilayer on crystal quality of epilayer was extensively studied. The effect of in situ thermal annealing during the growth on improving the GaN layer crystal quality was demonstrated and the possible mechanism involved in such a growth process was discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
Resumo:
Cubic GaN was grown on GaAs(100) by low pressure metal organic chemical vapor deposition (MOCVD). X-ray diffraction, scanning electron microscope (SEM) and photoluminescence (PL) spectra were performed to characterize the quality of the GaN film. The PL spectra of cubic GaN thin films being thicker than 1.5 mu m were reported. Triple-crystal diffraction to analyze orientation distributions and strain of the thin films was also demonstrated.