Propagation properties of off-axis Hermite-cosh-Gaussian beam combinations through a first-order optical system

Based on the Collins integral formula, the analytic expressions of propagation of the coherent and the incoherent off-axis Hermite-cosh-Gaussian (HChG) beam combinations with rectangular symmetry passing through a paraxial first-order optical system are derived, and corresponding numerical examples are given and analysed. The resulting beam quality is discussed in terms of power in the bucket (PIB). The study suggests that the resulting beam cannot keep the initial intensity shape during the propagation and the beam quality for coherent mode is not always better than that for incoherent mode. Reviewing the numerical simulations of Gaussian, Hermite-Gaussian (HG) and cosh Gaussian (ChG) beam combinations indicates that the Hermite polynomial exerts a chief influence on the irradiance profile of composite beam and far field power concentration.

Beam quality improvement of laser diode array by using off-axis external cavity

A novel off-axis external cavity is designed for laser diode array to improve the beam quality. In this external cavity, a circle aperture with variable size is used as a spatial filter. The diameter of aperture is optimized to 1.2mm and the off-axis angle of external cavity is optimized at 2.6 deg. In the optimal case, the beam parameter product (BPP) of laser diode array is reduced to 121 mm. mrad from 1050 mm. mrad with external cavity optical efficiency of 81%. (C) 2007 Optical Society of America.

Trade-off between reciprocal mutualists: local resource availability-oriented interaction in fig/fig wasp mutualism

The mechanisms that prevent competition (conflict) between the recipient and co-operative actor in co-operative systems remain one of the greatest problems for evolutionary biology. Previous hypotheses suggest that self-restraint, dispersal or spatial con

Seasonal changes in the trade-off among fig-supported wasps and viable seeds in figs and their evolutionary implications

What the real trade-off is among fig-supported wasps and the viable seeds of figs is heatedly debated in the studies of fig/fig wasp mutualism. In the present study, we collected wasp offspring (galls) and the viable seeds of premature fruits, and determined the foundress number in receptive fruits and all the types of wasps supported by Ficus racemosa L. during both the rainy and dry seasons in Xishuangbanna, China. The data show that the galls were positively correlated with viable seeds (n=32;r=0.74; P < 0.001) when the proportion of vacant female flowers (PVFF) was high, in April (68.0%), and were negatively correlated with viable seeds (n=48;r=-0.59; P < 0.05) when PVFF were limited (PVFF 42.6%) during a colder month (January). The mean foundress number per fruit during the colder months is significantly lower than during the warmer months (F-5,F-603 = 27.9; P < 0.001) and pollinator wasps can live longer during the colder months, During the colder months, the proportions of non-pollinators and wasp offspring are higher than those found during other months, whereas the proportion of viable seeds is not different compared with that of other months. Non-pollinator wasps tend to oviposit the female flowers that have been oviposited by pollinator wasps. The non-pollinators only negatively affect pollinator wasps and there is no obvious negative effect of non-pollinator wasps on viable seeds, so ovipositing by non-pollinator wasps will not result in the extinction of the figs during the process of evolution. The results of the present study indicate that figs can allow less foundresses to be in fruit cavities when PVFF are limited, which provides supporting evidence for the previous assumption that the plants have developed a mechanism to maintain a stable system because of the conflicts between the parties involved.

Off-axis sonar beam pattern of free-ranging finless porpoises measured by a stereo pulse event data logger

The off-axis sonar beam patterns of eight free-ranging finless porpoises were measured using attached data logger systems. The transmitted sound pressure level at each beam angle was calculated from the animal's body angle, the water surface echo level, and the swimming depth. The beam pattern of the off-axis signals between 45 and 115 (where 0 corresponds to the on-axis direction) was nearly constant. The sound pressure level of the off-axis signals reached 162 dB re 1 mPa peak-to-peak. The surface echo level received at the animal was over 140 dB, much higher than the auditory threshold level of small odontocetes. Finless porpoises are estimated to be able to receive the surface echoes of off-axis signals even at 50-m depth. Shallow water systems (less than 50-m depth) are the dominant habitat of both oceanic and freshwater populations of this species. Surface echoes may provide porpoises not only with diving depth information but also with information about surface direction and location of obstacles (including prey items) outside the on-axis sector of the sonar beam. 2005 Acoustical Society of America.

Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.

Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.

Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots

We investigate the development of cross-hatch grid surface morphology in growing mismatched layers and its effect on ordering growth of quantum dots (QDs). For a 60degrees dislocation (MD), the effective part in strain relaxation is the part with the Burgers vector parallel to the film/substrate interface within its b(edge) component; so the surface stress over a MD is asymmetric. When the strained layer is relatively thin, the surface morphology is cross-hatch grid with asymmetric ridges and valleys. When the strained layer is relatively thick, the ridges become nearly symmetrical, and the dislocations and the ridges inclined-aligned. In the following growth of InAs, QDs prefer to nucleate on top of the ridges. By selecting ultra-thin In0.15Ga0.85As layer (50nm) and controlling the QDs layer at just formed QDs, we obtained ordered InAs QDs. (C) 2004 Elsevier B.V. All rights reserved.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Nanofabrication of grid-patterned substrate by holographic lithography

The two-dimensional grid patterns on Si(001) in nanometer scale have been fabricated by holographic lithography and reactive ion etching, which can be used as a substrate for positioning Ge islands during self-assembled epitaxy to obtain an ordered Ge quantum dots matrix. By changing the configuration of the holographic lithography and the etching rate and time, we can control the grid period, the shape of the pattern cell, and the orientation of those shapes, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

A Raman scattering study of GaAs: As films lifted off GaAs substrate

We performed Raman scattering investigations on low-temperature-grown (LTG) films of GaAs that had been lifted off the GaAs substrate. The Raman measurements unambiguously show the effects of excess arsenic on phonon scattering from LTG films of GaAs. The larger downwards shift of the LO phonon frequency for unannealed free-standing films is explained by invoking the elimination of mismatch strain. The Raman signal due to precipitates of elemental arsenic in the annealed GaAs : As films is determined. It is confirmed that the arsenic clusters formed by rapid thermal annealing are mainly amorphous, giving rise a broad Raman peak in the range 180-260 cm(-1).

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.

Crypto-grid计算系统的设计与实现

简要介绍网格、密码计算特点和Crypto-grid的主要服务和组成,然后从系统需求、实现方法、主要功能模块、子任务计算实现等几个方面来剖析密码网格计算系统.