Light-induced changes in diphasic nanocrystalline silicon films and solar cells

A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures

Si thin films with different structures were deposited by plasma enhanced chemical vapor deposition (PECVD), and characterized via Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The passivation effect of such different Si thin films on crystalline Si surface was investigated by minority carrier lifetime measurement via a method, called microwave photoconductive decay (mu PCD), for the application in HIT (heterojunction with intrinsic thin-layer) solar cells. The results show that amorphous silicon (a-Si:H) has a better passivation effect due to its relative higher H content, compared with microcrystalline (mu c-Si) silicon and nanocrystalline silicon (nc-Si). Further, it was found that H atoms in the form of Si-H bonds are more preferred than those in the form of Si-H-2 bonds to passivate the crystalline Si surface. (C) 2009 Elsevier B.V. All rights reserved.

Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline

A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.

Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering

Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesC for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous Sic is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the Sic nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline Sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.

Sol-gel growth of Gd2MoO6 : Eu3+ nanocrystalline layers on SiO2 spheres (SiO2@Gd2MoO6 : Eu3+) and their luminescent properties

SiO2@Gd2MoO6:EU3+ core-shell phosphors were prepared by the sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy ITEM), photoluminescence (PL) spectra as well as kinetic decays were used to characterize the resulting SiO2@Gd2MoO6:Eu3+ core-shell phosphors. The XRD results demonstrate that the Gd2MoO6:Eu3+ layers on the SiO2 spheres begin to crystallize after annealing at 600 degrees C and the crystallinity increases with raising the annealing temperature. The obtained core-shell phosphors have a near perfect spherical shape with narrow size distribution (average size ca. 600 nm), are not agglomerated, and have a smooth surface. The thickness of the Gd2MoO6:Eu3+ shells on the SiO2 cores could be easily tailored by varying the number of deposition cycles (50 nm for four deposition cycles). The Eu3+ shows a strong PL luminescence (dominated by D-5(0)-F-7(2) red emission at 613 nm) under the excitation of 307 nm UV light.

Surface photovoltage spectra and photoelectrochemical properties of semiconductor-sensitized nanostructured TiO2 electrodes

Three kinds of TiO2 nanostructured thin films and their CdS-sensitized films, consisting of different sizes of TiO2 nanoparticles prepared with different methods, have been investigated. The surface photovoltage spectra (SPS) measurements indicate that the density of surface states on TiO2 is likely dependent upon the details of prepared methods. TiO2 particles prepared from basic sol have more surface states than that prepared from acidic sol. When the TiO2 thin films prepared using the TiO2 sols were sensitized by CdS particles, the SPS responses relative to the surface states on TiO2 from 350 to 800 nm were decreased. The photoelectrochemical properties of nanostructured TiO2 electrodes suggest that the fewer the surface states and the smaller the particle sizes of TiO2, the larger the photocurrent response. For CdS sensitized TiO2 thin film electrode, it is shown that the semiconductor sensitization is an efficient way to decrease the influence of surface states on the charge separation, and can improve the intensity of photocurrent response. (C) 2001 Elsevier Science B.V. All rights reserved.

Preparation and properties of nanocrystalline Yb2O3

Nanocrystalline Yb2O3 of various particle sizes was prepared using sol-gel method. XRD analysis shows that the prepared nanocrystalline Yb2O3 is cubic in structure with space group Ia3. TEM photographs indicate that Yb2O3 nanoparticles are basically spherical in shape. Calculation of crystallite size indicates that the average crystallite size of Yb2O3 increases with increasing calcination temperature, but the average crystal lattice distortion rate decreases with increasing calcination temperature and crystallite size. This result shows that the smaller the crystallite size, the bigger the crystal lattice distortion, and the worse crystal growth. Solubility test of Yb2O3 in nitric acid shows that the surface activity of Yb2O3 increases with decreasing crystallite size. Fourier Transform Infrared Spectrometer (FTIR) spectra reveal that nanocrystalline Yb2O3 has higher surface activity; than that of ordinary Yb2O3. Absorbance intensity of Yb-O bond of nanocrystalline Yb2O3 is weaker than that of ordinary Yb2O3, and the absorbance of Yb-O bond of nanocrystalline Yb2O3 is small blue-shifted.

A STUDY OF THE SPECTRUM PROPERTIES AND THE PHOTOVOLTAGE RESPONSE OF NANOCRYSTALLINE ND2O3

The diffuse reflectance spectra of nanocrystalline Nd2O3 were measured in the ultraviolet-visible region, It is found that the part of f-->f transition bands were widened and red-shift occurred. The absorption tail-band in the region from 300 to 550 nm was assigned to the O-2p-->Nd-4f transition. The behavior of light-induced charge transfer and photovoltaic properties of nanocrystalline Nd2O3 were studied by the surface photovoltage spectroscopy (SPS) and electric field modulating SPS techniques. The SPS response shows two peaks at 330 nm(P-1) and 380 nm(P-2) in the UV-Vis range, The spectral features observed can be explained in terms of charge transfer and interband transition.

Photovoltaic Properties and Quantum Size Effect in Nanocrystalline CeO2

Different size. nanocrystallines CeO2 were synthesized and their diffuse reflectance absorption spectra have heen measured. The absorption band in the region from 300 to 450 nm was assigned to the O2p-Ce2 4f transition. It was found that a strongly red-shifted broad continuum of the absorption band occured as the decrease of the partical size. We have also measured the surface photovoltage as function of wavelength by SPS technique. And the absorption band was resolved to two peaks with different photovoltaic properties. Photovoltaic quantum size effect was observed by FMSPS measurement.

The Photovoltage Properties and the Spectrum Analyses of Nanocrystalline Er2O3

The diffuse reflectance spectra of nanocrystalline Er2O3 were measured in the UV-vis region. It was found that the f -> f transition bands become stronger with the decrease of the size of particles. The tail-band in the range of 300 similar to 550nm was assigned to the O2p -> Er4f transition. Both behavior of light-induced charge transfer and photovoltaic properties of nanocrystalline Er2O3 were investigated with surface photovoltage spectroscopy (SPS). The SPS shows that two peaks appear at 340nm (p(1)) and 385nm (p(2)). The observed spectral features can be explained in terms of charge transfer and interband transition.