Calibration of microwave network analyzer

This paper presents a systematic description of the methods for calibrating microwave network analyzer and test fixtures, and discusses the problems arising in the calibration. The general criteria for choosing calibration standards and corresponding algorithms are discussed and suggestions to overcome these problems and improve the calibration accuracy are also given. It has been found that for reciprocal test fixtures, the four equations obtained with the thru standard can be used at the same time. Meanwhile, the calibration accuracy can be improved. It has been shown that using the same calibration procedures but different algorithms may lead to the occurrence of frequency limitation.

Optical microwave generation using two parallel DFB lasers integrated with Y-branch waveguide coupler

A new device of two parallel distributed feedback (DFB) lasers integrated monolithically with Y-branch waveguide coupler was fabricated by means of quantum well intermixing. Optical microwave signal was generated in the Y-branch waveguide coupler through frequency beating of the two laser modes coming from two DFB laser in parallel, which had a small difference in frequency. Continuous rapid tuning of optical microwave signal from 13 to 42 GHz were realized by adjusting independently the driving currents injected into the two DFB lasers.

Quantum information processing with superconducting qubits in a microwave field

We investigate the quantum dynamics of a Cooper-pair box with a superconducting loop in the presence of a nonclassical microwave field. We demonstrate the existence of Rabi oscillations for both single- and multiphoton processes and, moreover, we propose a new quantum computing scheme (including one-bit and conditional two-bit gates) based on Josephson qubits coupled through microwaves.

Frequency limitation in the calibration of microwave test fixtures

The problem of frequency limitation arising from the calibration of asymmetric and symmetric test fixtures has been investigated. For asymmetric test fixtures, a new algorithm based on the thru-short-match (TSM) method is outlined. It is found that the conventional TSM method does not have any inherent frequency limitation, but using the same procedure with an unknown match may lead to the said problem. This limitation can be avoided by using a different algorithm. The various calibration methods for symmetric test fixtures using known standards are also discussed and the origin of the frequency limitation is identified. Several ways in avoiding the problem are proposed. There is good agreement between the theories and experimental data.

New algorithms of the TSM and TOM methods for calibrating microwave test fixtures

Based on the conventional through-short-match (TSM) method, an improved TSM method has been proposed in this Letter. This method gives an analytical solution and has almost all the advantages of conventional TSM methods. For example, it has no phase uncertainty and no bandwidth limitation. The experimental results show that the accuracy can be significantly improved with this method. The proposed theory can be applied to the through-open-match (TOM) method. (C) 2002 Wiley Periodicals. Inc.

Experimental measurement of microwave-induced electron spin-flip time

The electron spin resonance (ESR) is optically detected by monitoring the microwave-induced changes in the circular polarization of the neutral exciton (X) and the negatively charged exciton (X-) emission in CdTe quantum wells with low density of excess electrons. We find that the circular polarization of the X and X- emission is a mapping of the spin polarization of excess electrons. By analyzing the ESR-induced decrease in the circular polarization degree of the X emission, we deduce the microwave-induced electron spin-flip time >0.1 mus, which is much longer than the recombination time of X and X-. This demonstrates that the optically detected ESR in type I quantum wells with low density of excess electrons does not obey the prerequisite for the conventional optically detected magnetic resonance. (C) 2001 American Institute of Physics.

Phase uncertainty in calibrating microwave test fixtures

The problem of phase uncertainty arising in calibration of the test fixtures is investigated in this paper, It is shown that the problem exists no matter what kinds of calibration standards are used. It is also found that there is no need to determine the individual S-parameters of the test fixtures. In order to eliminate the problem of phase uncertainty, three different precise (known) reflection standards or one known reflection standard plus one known transmission standard should be used to calibrate symmetrical test fixtures. For the asymmetrical cases, three known standards, including at least one transmission standard, should be used. The thru-open-match (TOM) and thru-short-match (TSM) techniques are the simplest methods, and they have no bandwidth limitation. When the standards are imprecise (unknown), it is recommended to use any suitable technique, such as the thru-reflect-line, line-reflect-line, thru-short-delay, thru-open-delay,line-reflect-match, line-reflect-reflect-match, or multiline methods, to accurately determine the values of the required calibration terms and, in addition, to use the TOM or TSM method with the same imprecise standards to resolve the phase uncertainty.

Room-temperature microwave oscillation in AlAs/GaAs superlattices

Room-temperature microwave (MW) oscillations are observed in GaAs/AlAs (10 nm/2 nm) doped weakly coupled superlattices (SLs) in the first plateau of the I-V curve. Oscillations induced by sequential resonant tunneling are detected in a temperature range from 15 to 300 K by applying DC bias on the Si, diodes. The temperature dependence of current at small fixed bias voltage is also measured. Through analysis, it is found that the dominant transport mechanisms are sequential resonant tunneling and phonon-assisted tunneling when the temperature is below 300 K. The low bias voltage at which oscillations are realized is helpful to restrain thermionic emission through the X valley of AlAs barriers in the room-temperature transport. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

Measurement and analysis of microwave frequency response of semiconductor optical amplifiers - art. no. 682406

The measurement and analysis of the microwave frequency response of semiconductor optical amplifiers (SOAs) are proposed in this paper. The response is measured using a vector network analyzer. Then with the direct-subtracting method, which is based on the definition of scattering parameters of optoelectronic devices, the responses of both the optical signal source and the photodetector are eliminated, and the response of only the SOA is extracted. Some characteristics of the responses can be observed: the responses are quasi-highpass; the gain increases with the bias current; and the response becomes more gradient while the bias current is increasing. The multisectional model of an SOA is then used to analyze the response theoretically. By deducing from the carrier rate equation of one section under the steady state and the small-signal state, the expression of the frequency response is obtained. Then by iterating the expression, the response of the whole SOA is simulated. The simulated results are in good agreement with the measured on the three main characteristics, which are also explained by the deduced results. This proves the validity of the theoretical analysis.

Widely Frequency-Tunable Optical Microwave Source Based on Amplified Feedback Laser

A monolithic integrated amplified feedback semiconductor laser is demonstrated as an optical microwave source. The optical microwave frequency is continuously tunable in the range of 19.87-26.3 GHz with extinction ratio above 6 dB, 3-dB linewidth about 3MHz.

Microwave packaging for 10 Gb/s EML modulators - art. no. 60201O

A novel microwave packaging technique for 10Gb/s electro-absorption modulator integrated with distributed feedback laser (EML) is presented. The packaging parasitics and intrinsic parasitics are both well considered, and the packaging circuit was synthetically designed to compensate for the intrinsic parasitic of the chip. A butterfly-packaged EMI module has been successfully developed to prove that. The small-signal modulation bandwidth of the butterfly-packaged module is about 10 GHz. Optical fiber transmission experiments have shown that the module can be used for 10Gb/s optical transmission system. After transmission through 40km,. the power penalty is less than 1 dBm at a bit-error-rate of 10-12.

Design and Fabrication of Low-microwave loss Coplannar Waveguide and precise V groove on Silicon Substrate for Optoelectronic Packaging - art. no. 601938

Optoelectronic packaging has become a most important factor that influences the final performance and cost of the module. In this paper, low microwave loss coplanar waveguide(CPW) on high resistivity silicon(HRS) and precise V groove in silicon substrate were successfully fabricated. The microwave attenuation of the CPW made on HRS with the simple process is lower than 2 dB/cm in the frequency range of 0 similar to 26GHz, and V groove has the accuracy in micro level and smooth surface. These two techniques built a good foundation for high frequency packaging and passive coupling of the optoelectronic devices. Based on these two techniques, a simple high resistivity silicon substrate that integrated V groove and CPW for flip-chip packaging of lasers was completed. It set a good example for more complicate optoelectronic packaging.

Effect of microwave on formation/decomposition of natural gas hydrate

Natural gas hydrate (NGH) reservoirs have been considered as a substantial future clean energy resource and how to recover gas from these reservoirs feasibly and economically is very important. Microwave heating will be taken as a promising method for gas production from gas hydrates for its advantages of fast heat transfer and flexible application. In this work, we investigate the formation/decomposition behavior of natural gas hydrate with different power of microwave (2450MHZ), preliminarily analyze the impact of microwave on phase equilibrium of gas hydrate,and make calculation based on van der Waals-Platteeuw model. It is found that microwave of a certain amount of power can reduce the induction time and sub-cooling degree of NGH formation, e.g., 20W microwave power can lead to a decrease of about 3A degrees C in sub-cooling degree and the shortening of induction time from 4.5 hours to 1.3 hours. Microwave can make rapid NGH decomposition, and water from NGH decomposition accelerates the decomposition of NGH with the decomposition of NGH. Under the same pressure, microwave can increase NGH phase equilibrium temperature. Different dielectric properties of each composition of NGH may cause a distinct difference in temperature in the process of NGH decomposition. Therefore, NGH decomposition by microwave can be affected by many factors.

In situ hydrate dissociation using microwave heating: Preliminary study

In this work, we investigate the dissociation behavior of natural gas hydrate in a closed system with microwave (MW) heating and hot water heating. The hydrate was formed at temperatures of 1-4 degrees C and pressures of 4.5-5.5 MPa. It was found that the gas hydrate dissociated more rapidly with microwave than with hot water heating. The rate of hydrate dissociation increased with increasing microwave power, and it was a function of microwave power. Furthermore, the temperature of the hydrate increased linearly with time during the microwave radiation.