火成岩储层裂缝识别、预测理论与方法研究－以济阳坳陷火成岩油藏为例

Since 1970s, igneous reservoirs such as Shang741, Bin674 and Luol51 have been found in Jiyang depression, which are enrichment and heavy-producing. Showing good prospect of exploration and development, igneous reservoirs have been the main part of increasing reserves and production in Shengli oilfield. As fracture igneous reservoir being an extraordinary complex concealed reservoir and showing heavy heterogeneity in spatial distribution, the study of recognition, prediction, formation mechanism and the law of distribution of fracture is essential to develop the reservoir. Guided by multiple discipline theory such as sedimentology, geophysics, mineralogy, petroleum geology, structural geology and reservoir engineering, a set of theories and methods of recognition and prediction of fractured igneous rock reservoir are formed in this paper. Rock data, three-dimensional seismic data, log data, borehole log data, testing data and production data are combined in these methods by the means of computer. Based on the research of igneous rock petrography and reservoir formation mechanism, emphasized on the assessment and forecast of igneous rock reservoir, aimed at establishing a nonhomogeneity quantification model of fractured igneous rock reservoir, the creativity on the fracture recognition, prediction and formation mechanism are achieved. The research result is applied to Jiyang depression, suggestion of exploration and development for fractured igneous rock reservoir is supplied and some great achievement and favourable economic effect are achieved. The main achievements are gained as follows: 1. The main facies models of igneous rock reservoir in JiYang depression are summarized. Based on data and techniques of seism, well log and logging,started from the research of single well rock facies, proceeded by seismic and log facies research, from point to line and line to face, the regional igneous facies models are established. And hypabyssal intrusion allgovite facies model, explosion volcaniclastic rock facies model and overfall basaltic rocks facies model are the main facies models of igneous rock reservoir in JiYang depression. 2. Four nonhomogenous reservoir models of igneous reservoirs are established, which is the base of fracture prediction and recognition. According to characteristics of igneous petrology and spatial types of reservoir, igneous reservoirs of Jiyang depression are divided into four categories: fractured irruptive rock reservoir, fracture-pore thermocontact metamorphic rock and irruptive rock compound reservoir, pore volcanic debris cone reservoir and fracture-pore overfall basaltic rock reservoir. The spatial distribution of each model's reservoir has its features. And reservoirs can be divided into primary ones and secondary ones, whose mechanism of formation and laws of distribution are studied in this paper. 3. Eight geologic factors which dominate igneous reservoirs are presented. The eight geologic factors which dominates igneous reservoirs are igneous facies, epigenetic tectonics deformation, fracture motion, intensity of intrusive effect and adjoining-rock characters, thermo-contact metamorphic rock facies, specific volcano-tectonic position, magmatic cyclicity and epigenetic diagenetic evolution. The interaction of the eight factors forms the four types nonhomogenous reservoir models of igneous reservoirs in Jiyang depression. And igneous facies and fracture motion are the most important and primary factors. 4. Identification patterns of seismic, well log and logging facies of igneous rocks are established. Igneous rocks of Jiyang depression show typical reflecting features on seismic profile. Tabular reflection seismic facies, arc reflection seismic facies and hummocky or mushroom reflection seismic facies are the three main facies. Logging response features of basic basalt and diabase are shown as typical "three low and two high", which means low natural gamma value, low interval transit-time, low neutron porosity, high resistivity and high density. Volcaniclastic rocks show "two high and three low"-high neutron porosity, high interval transit-time, low density, low-resistance and low natural gamma value. Thermo-contact metamorphic rocks surrounding to diabase show "four high and two low" on log data, which is high natural gamma value, high self-potential anomaly, high neutron porosity, high interval transit-time and low density and low-resistance. Based on seismic, well log and logging data, spatial shape of Shang 741 igneous rock is described. 5. The methods of fracture prediction and recognition for fractured igneous reservoir are summarized. Adopting FMI image log and nuclear magnetic resonance log to quantitative analysis of fractured igneous reservoir and according to formation mechanism and shape of fracture, various fractures are recognized, such as high-angle fracture, low-angle fracture, vertical fracture, reticulated fracture, induced fracture, infilling fracture and corrosion vug. Shang 741 intrusive rock reservoir can be divided into pore-vug compound type, pore fracture type, micro-pore and micro-fracture type. Physical properties parameters of the reservoir are computed and single-well fracture model and reservoir parameters model are established. 6. Various comprehensive methods of fracture prediction and recognition for fractured igneous reservoir are put forward. Adopting three-element (igneous facies, fracture motion and rock bending) geologic comprehensive reservoir evaluation technique and deep-shallow unconventional laterolog constrained inversion technique, lateral prediction of fractured reservoir such as Shang 741 is taken and nonhomogeneity quantification models of reservoirs are established.

A low noise charge sensitive preamplifier with switch control feedback resistance

In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94 Omega and the linearity almost good.

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.

Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

A novel butt-joint scheme for the preparation of electro-absorptive lasers

A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically integrated with a distributed feedback laser (DFB) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. The threshold current of 25 mA and an extinction ratio of more than 30 dB are obtained by using the novel structure. The beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the InGaAsP active region. The capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pF.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy

In situ doping for growth of n-p-n Si/SiGe/Si heterojuction bipolar transistor (HBT) structural materials in Si gas source molecular beam epitaxy is investigated. We studied high n-type doping kinetics in Si growth using disilane and phosphine, and p-type doping in SiGe growth using disilane, soild-Ge, and diborane with an emphasis on the effect of Ge on B incorporation. Based on these results, in situ growth of n-p-n Si/SiGe/Si HBT device structure is demonstrated with designed structural and carrier profiles, as verified from characterizations by X-ray diffraction, and spreading resistance profiling analysis. (C) 2000 Elsevier Science B.V. All rights reserved.

Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors

A novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VOx thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which was very compatible with the process of uncooled infrared detectors based on micromachined technology. Furthermore, chemical composition and film surface have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results showed that the main composition of the processed thin films was V2O5 and the thin films were in the process of crystallization.

Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors

Low cost Si-based tunable InGaAs RCE photodetectors operating at 1.3similar to1.6 mum were fabricated using sol-gel bonding. A tuning range of 14.5 nm, a quantum efficiency of 44% at 1476 nm and a 3-dB bandwidth of 1.8 GHz were obtained.

Butt-Joint Monolithicaily Integrated DFB-LD/EA-MD Light Source for 10Gbit/s Transmission

This paper reports on the design, fabrication, and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application. This paper mainly aims at two aspects. One is to improve the optical coupling between the laser and modulator; another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator. The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA. Output power at 100mA is more than 10mW. The extinction characteristics,modulation bandwidth, and electrical return loss are measured. 3dB bandwidth more than 10GHz is monitored.

Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.

Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots

N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) is observed in a GaAs-based modulation-doped field effect transistor (MODFET) with InAs quantum dots (QDs) in the barrier layer (QDFET) compared with a GaAs MODFET. The NDR is explained as the real-space transfer (RST) of high-mobility electrons in a channel into nearby barrier layers with low mobility, and the PVR is enhanced dramatically upon inserting the QD layer. It is also revealed that the QD layer traps holes and acts as a positively charged nano-floating gate after a brief optical illumination, while it acts as a negatively charged nano-floating gate and depletes the adjacent channel when charged by the electrons. The NDR suggests a promising application in memory or high-speed logic devices for the QDFET structure.

Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites

An electrically bistable device has been fabricated using nanocomposite films consisting of silver nanoparticles and a semiconducting polymer by a simple spin-coating method. The current-voltage characteristics of the as-fabricated devices exhibit an obvious electrical bistability and negative differential resistance effect. The current ratio between the high-conducting state and low-conducting state can reach more than 103 at room temperature. The electrical bistability of the device is attributed to the electric-filed-induced charge transfer between the silver nanoparticles and the polymer, and the negative differential resistance behavior is related to the charge trapping in the silver nanoparticles. The results open up a simple approach to fabricate high quality electrically bistable devices by doping metal nanoparticles into polymer.

Fabrication of Novel Superhydrophobic Surfaces and Water Droplet Bouncing Behavior - Part 1: Stable ZnO-PDMS Superhydrophobic Surface with Low Hysteresis Constructed Using ZnO Nanoparticles

A superhydrophobic surface has many advantages in micro/nanomechanical applications, such as low adhesion, low friction and high restitution coefficient, etc. In this paper, we introduce a novel and simple route to fabricate superhydrophobic surfaces using ZnO nanocrystals. First, tetrapod-like ZnO nanocrystals were prepared via a one-step, direct chemical vapor deposition (CVD) approach. The nanostructured ZnO material was characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD) and the surface functionalized by aminopropyltriethoxysilane (APS) was found to be hydrophobic. Then the superhydrophobic surface was constructed by depositing uniformly ZnO hydrophobic nanoparticles (HNPs) on the Poly(dimethylsiloxane) (PDMS) film substrate. Water wettability study revealed a contact angle of 155.4 +/- 2 degrees for the superhydrophobic surface while about 110 degrees for pure smooth PDMS films. The hysteresis was quite low, only 3.1 +/- 0.3 degrees. Microscopic observations showed that the surface was covered by micro- and nano-scale ZnO particles. Compared to other approaches, this method is rather convenient and can be used to obtain a large area superhydrophobic surface. The high contact angle and low hysteresis could be attributed to the micro/nano structures of ZnO material; besides, the superhydrophobic property of the as-constructed ZnO-PDMS surface could be maintained for at least 6 months. (C) Koninklijke Brill NV, Leiden, 2010