Gene structure and transcription of IRF-1 and IRF-7 in the mandarin fish Siniperca chuatsi

The genes of IRF-1 and IRF-7 have been cloned from the mandarin fish (Siniperca chuatsi). The IRF-1 gene has 4919 nucleotides (nt) and contains 10exons and 9introns, with an open reading frame (ORF) of 903 ntencoding301 aa. The IRF-7 gene has 6057 nt and also contains 10exons and 9introns, with an ORF of 1308 nt encoding 436 aa. The IRF-1 and IRF-7 genes have only one copy each in the genome. The transcription of IRF-1 and IRF-7 in different organs was analyzed by real-time PCR, and both molecules were constitutively expressed. The IRF-I and IRF-7 mRNAs were abundant in gill, spleen, kidney and pronephros. The temporal transcriptional changes for IRF-1, IRF-7 and Mx were investigated within 48 h after poly I: C stimulation in liver, gill, spleen and pronephros. An increased transcription was detected for IRF-1 and IRF-7 12 h post-stimulation, being earlier than the transcription of Mx protein; however, IRF-1 and IRF-7 transcription decreased while the Mx protein was stable at 48 h post-stimulation. (c) 2007 Published by Elsevier B.V.

Genomic organization, gene duplication, and expression analysis of interleukin-1 beta in channel catfish (Ictalurus punctatus)

Interleukin-1 beta (IL-1 beta) is one of the pivotal early response pro-inflammatory cytokines that enables organisms to respond to infection and induces a cascade of reactions leading to inflammation. In spite of its importance and two decades of studies in the mammalian species, genes encoding IL-1 beta were not identified from non-mammalian species until recently. Recent research, particularly with genomic approaches, has led to sequencing of IL-1 beta from many species. Clinical studies also Suggested IL-1 beta as an immunoreagulatory molecule potentially useful for enhancing vaccination. However, no IL-1 beta genes have been identified from channel catfish, the primary aquaculture species from the United States. In this study, we identified two distinct cDNAs encoding catfish IL-1 beta. Their encoding genes were identified, sequenced, and characterized. The catfish IL-1 beta genes were assigned to bacterial artificial chromosome (BAC) clones. Genomic studies indicated that the IL-1 beta genes were tandemly duplicated on the same chromosome. Phylogenetic analysis of various IL-1 beta genes indicated the possibility of recent species-specific gene duplications in channel catfish, and perhaps also in swine and carp. Expression analysis indicated that both IL-1 beta genes were expressed, but exhibited distinct expression profiles in various catfish tissues, and after bacterial infection with Edwardsiella ictaluri. (c) 2005 Elsevier Ltd. All rights reserved.

Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures

We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the accumulated strain. Furthermore, we demonstrate that the strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.

Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

The crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (10 (1) over bar(3) over bar) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2 X 10(5) cm(-2), revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement. (C) 2009 Elsevier B.V. All rights reserved.

Optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes

A small-size optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes is designed and theoretically simulated using plane wave expansion and finite-difference time-domain method. The interleaver is formed by two parallel and identical photonic crystal slab waveguides which are separated by three rows of air holes. The coupling region is designed below the light line to avoid vertical radiation. The simulated results show that the coupling coefficient is increased and the final length of the interleaver is decreased by enlarging the radius of the middle row of air holes. The transmission properties are analyzed after the interleaver's structure is optimized, and around 100 GHz channel spacing can be got when the length of the interleaver is chosen as 40.5 mu m. (c) 2006 Elsevier B.V. All rights reserved.

Improved surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot active regions by introducing annealing processes

The authors report a simple but effective way to improve the surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot (QD) active regions grown by metal-organic chemical vapor deposition (MOCVD), in which GaAs middle spacer and top separate confining heterostructure (SCH) layers are deposited at a low temperature of 560 degrees C to suppress postgrowth annealing effect that can blueshift emission wavelength of QDs. By introducing annealing processes just after depositing the GaAs spacer layers, the authors demonstrate that the surface morphology of the top GaAs SCH layer can be dramatically improved. For a model structure of five-layer QDs, the surface roughness with the introduced annealing processes (IAPs) is reduced to about 1.3 nm (5x5 mu m(2) area), much less than 4.2 nm without the IAPs. Furthermore, photoluminescence measurements show that inserting the annealing steps does not induce any changes in emission wavelength. This dramatic improvement in surface morphology results from the improved GaAs spacer surfaces due to the IAPs. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers based on MOCVD.

Angular dependent characteristics of a 1.3-mu m GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect

Characteristics of a 1.3-mum GaInNAs RCE PD with respect to the incident light angle were analyzed both in theoretical simulation and experiments. The results show the influence can be neglected when the light incidence angle is less than 3degrees. This is a requirement for the PD to be applied in WDM networks. (C) 2002 Wiley Periodicals, Inc.

Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing

The effect of thermal annealing of InAs/GaAs quantum dots (QDs) with emission wavelength at 1.3 mu m have been investigated by photoluminescence (PL) and transmission electron microscopy (TEM measurements. There is a dramatic change in the A spectra when the annealing temperature is raised up to 800 degrees C: an accelerated blushifit of the main emission peak of QDs together with an inhomogeneous broadening of the linewidth. The TEM images shows that the lateral size of normal QDs decreases as the annealing temperature is increased, while the noncoherent islands increase their size and densit. A small fraction of the relative large QDs contain dislocations when the annealing temperature increases up to 800 degrees C. The latter leads to the strong decrease of the PL intensity.

Operational characteristics of a 1.2-MW biomass gasification and power generation plant

In this study, we analyzed the operational characteristics of a 1.2-MW rice husk gasification and power generation plant located in Changxing, Zhejiang province, China. The influences of gasification temperature, equivalence ratio (ER), feeding rate and rice husk water content on the gasification characteristics in a fluidized bed gasifier were investigated. The axial temperature profile in the dense phase of the gasifier showed that inadequate fluidization occurred inside the bed, and that the temperature was closely related to changes in ER and feeding rate. The bed temperature increased linearly with increasing ER when the feeding rate was kept constant, while a higher feeding rate corresponded to a lower bed temperature at fixed ER. The gas heating value decreased with increasing temperature, while the feeding rate had little effect. When the gasification temperature was 700-800C, the gas heating value ranged from 5450-6400kJ/Nm3. The water content of the rice husk had an obvious influence on the operation of the gasifier: increases in water content up to 15% resulted in increasing ER and gas yield, while water contents above 15% caused aberrant temperature fluctuations. The problems in this plant are discussed in the light of operational experience of MW-scale biomass gasification and power generation plants.

Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures

于2010-11-23批量导入

Effect of Nozzle Temperature on the Performance of a 1 kW H2-N2 Arcjet Thruster

A 1 kW-class arcjet thruster was ¯red in a vacuum chamber at a pressure of 18 Pa. A gas mixture of H2 : N2 = 2.8 : 1.5 in volume at a total °ow rate of 4.3 slm was used as the propellant with an input power ¯xed at 860 W. The time-dependent thrust, nozzle temperature and inlet pressure of the propellant were measured simultaneously. Results showed that with the increase in nozzle temperature the thrust decreased and various losses increased. The physical mechanisms involved in these effects are discussed.