Angular dependent characteristics of a 1.3-mu m GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect


Autoria(s): Zhang RK; Zhong Y; Zhang W; Xu YQ; Du Y; Huang YQ; Ren XM; Niu ZC; Wu RH
Data(s)

2002

Resumo

Characteristics of a 1.3-mum GaInNAs RCE PD with respect to the incident light angle were analyzed both in theoretical simulation and experiments. The results show the influence can be neglected when the light incidence angle is less than 3degrees. This is a requirement for the PD to be applied in WDM networks. (C) 2002 Wiley Periodicals, Inc.

Identificador

http://ir.semi.ac.cn/handle/172111/11824

http://www.irgrid.ac.cn/handle/1471x/64882

Idioma(s)

英语

Fonte

Zhang RK; Zhong Y; Zhang W; Xu YQ; Du Y; Huang YQ; Ren XM; Niu ZC; Wu RH .Angular dependent characteristics of a 1.3-mu m GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect ,MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,2002,34 (5):333-336

Palavras-Chave #光电子学 #GaInNAs quantum wells #resonant cavity enhanced photodetector #WDM networks
Tipo

期刊论文