Angular dependent characteristics of a 1.3-mu m GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect
Data(s) |
2002
|
---|---|
Resumo |
Characteristics of a 1.3-mum GaInNAs RCE PD with respect to the incident light angle were analyzed both in theoretical simulation and experiments. The results show the influence can be neglected when the light incidence angle is less than 3degrees. This is a requirement for the PD to be applied in WDM networks. (C) 2002 Wiley Periodicals, Inc. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang RK; Zhong Y; Zhang W; Xu YQ; Du Y; Huang YQ; Ren XM; Niu ZC; Wu RH .Angular dependent characteristics of a 1.3-mu m GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect ,MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,2002,34 (5):333-336 |
Palavras-Chave | #光电子学 #GaInNAs quantum wells #resonant cavity enhanced photodetector #WDM networks |
Tipo |
期刊论文 |