RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.

Quantum Well Intermixing of InGaAsP QWs by Impurity Free Vacancy Diffusion Using SiO_2 Encapsulation

Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO_2 encapsulation is reported. A maximum band gap wavelength blue-shift as large as 200nm is realized. Furthermore, an FP laser blue-shifted 21nm by QWI is fabricated with characteristics comparable with the asgrown one.

Hydrothermal synthesis and thermoelectric transport properties of impurity-free antimony telluride hexagonal nanoplates

Impurity-free single-crystalline antimony telluride hexagonal nanoplates (see figure) are synthesized by a facile and quick hydrothermal treatment without any organic additives or templates. The inherent crystal structure is the driving force for the growth of these Sb2Te3 hexagonal nanoplates. Films of these nanoplates shows p-type behavior, and exhibit a promisingly high Seebeck coefficient of 425 mu V K-1 at room temperature.

Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity

A two-dimensional axisymmetric numerical model is presented to study the influence of local magnetic fields on P-doped Si floating zone melting crystal growth in microgravity. The model is developed based on the finite difference method in a boundary-fitted curvilinear coordinate system. Extensive numerical simulations are carried out, and parameters studied include the curved growth interface shape and the magnetic field configurations. Computed results show that the local magnetic field is more effective in reducing the impurity concentration nonuniformity at the growth interface in comparison with the longitudinal magnetic field. Moreover, the curved growth interface causes more serious impurity concentration nonuniformity at the growth interface than the case with a planar growth interface.

Effect of non-uniform magnetic field on crystal growth by floating-zone method in microgravity

The magnetic damping effect of the non-uniform magnetic field on the floating-zone crystal growth process in microgravity is studied by numerical simulation. The results show that the non-uniform magnetic field with designed configuration can effectively reduce the flow near the free surface and then in the melt zone. At the same time, the designed magnetic field can improve the impurity concentration non-uniformity along the solidification interface. The primary principles of the magnetic field configuration design are also discussed.

Morphological Evolution During Synthesis of New AlPO4 Center dot H2O Crystal

A new crystal of aluminophosphate, AIPO(4)(.)H(2)O, is synthesized from two-batch aqueous solution under hydrothermal conditions. Three types of the crystal habits, i.e. the tetragonal double pyramid, the tetragonal prism and the plate-type tetragonal prism, are found from batch-A solution. Two types of the crystal habits, i.e. the hexagonal pyramid and the strip-type tetragonal prism, are found from batch-B solution. The change of crystal morphology is originated from the fluctuation of the synthesis conditions, such as the supersaturation, the temperature and the impurity content. It causes change of the step energies, the defect density and the step roughness, and further, change of the growth rates. Since the crystal morphology is sensitive to the mass transport mechanism, the crystal habits could be changed under the microgravity.

Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy

The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. The high-resolution x-ray diffraction results reveal that the single crystalline InAsxSb1-x films with a midrange composition are epitaxially grown on the GaSb substrates. Temperature dependence of the Hall mobility was theoretically modeled by considering several predominant scattering mechanisms. The results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (RT). Furthermore, the InAsxSb1-x films with the higher As composition exhibit the better crystalline quality and the higher mobility. The InAs0.35Sb0.65 film exhibits a Hall mobility of 4.62x10(4) cm(2) V-1 s(-1). The cutoff wavelength of photoresponse is extended to about 12 mu m with a maximum responsivity of 0.21 V/W at RT, showing great potential for RT long-wavelength infrared detection. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989116]

Preliminary-results of gaas single-crystal growth under high gravity conditions

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

Jet:progress in performance and understanding

In 1990 JET operated with a number of technical improvements which led to advances in performance and permitted the carrying out of experiments specifically aimed at improving physics understanding of selected topics relevant to the "NEXT STEP". The new facilities include beryllium antenna screens, a prototype lower hybrid current drive system, and modification of the NI system to enable the injection of He-3 and He-4. Continued investigation of the hot-ion H-mode produced a value of n(D)(0)tau-E(T)(i)(0) = 9 x 10(20)m-3s keV, which is near conditions required for Q(DT) = 1, while a new peaked density profile H-mode was developed with only slightly lower performance. Progress towards steady state operation has been made by achieving ELMy H-modes under certain operating conditions, while maintaining good tau-E values. Experimental simulation of He ash transport indicates effective removal of alpha-particles from the plasma core for both L and H mode plasmas. Detailed analyses of particle and energy transport have helped establish a firmer link between particle and energy transport, and have suggested a connection between reduced energy transport and reversed shear. Numerical and analytic studies of divertor physics carried out for the pumped divertor phase of JET have helped clarify the key parameters governing impurity retention, and an intensive model validation effort has begun. Experimental simulation of alpha-particle effects with beta-fast up to 8% have shown that the slowing down processes are classical, and have given no evidence of deleterious collective effects.

杂质对溶菌酶晶体表面形貌和生长动力学的影响

采用相差显微镜研究了两种杂质蛋白(荧光标记的溶菌酶和商品溶菌酶中的杂质)对四方溶菌酶晶体表面形貌、{110}和{101}表面生长速度以及{110}面台阶生长动力学的影响.杂质会影响晶体表面二维生长岛的形貌,并显著降低晶体{110}和{101}面法向生长速度.杂质会显著降低{110}表面台阶的生长速度,且对<110>方向速度的抑制效果显著强于<001>方向.根据切向台阶速度和过饱和度的关系,计算得到了台阶动力学系数β和台阶的有效表面能及棱边自由能.

Direct observation of adsorption sites of protein impurities and their effects on step advancement of protein crystals

We measured noninvasively step velocities of elementary two-dimensional (2D) islands on {110} faces of tetragonal lysozyme crystals, under various supersaturations, by laser confocal microscopy combined with differential interference contrast microscopy. We studied the correlation between the effects of protein impurities on the growth of elementary steps and their adsorption sites on a crystal surface, using three kinds of proteins: fluorescent-labeled lysozyme (F-lysozyme), covalently bonded dimers of lysozyme (dimer), and a 18 kDa polypeptide (18 kDa). These three protein impurities suppressed the advancement of the steps. However, they exhibited different supersaturation dependencies of the suppression of the step velocities. To clarify the cause of this difference, we observed in situ the adsorption sites of individual molecules of F-lysozyme and fluorescent-labeled dimer (F-dimer) on the crystal surface by single-molecule visualization. We found that F-lysozyme adsorbed preferentially on steps (i.e., kinks), whereas F-dimer adsorbed randomly on terraces. Taking into account the different adsorption sites of F-lysozyme and F-dimer, we could successfully explain the different effects of the impurities on the step velocities. These observations strongly suggest that 18 kDa also adsorbs randomly on terraces. Seikagaku lysozyme exhibited a complex effect that could not alone be explained by the two major impurities (dimer and 18 kDa) present in Seikagaku lysozyme, indicating that trace amounts of other impurities significantly affect the step advancement.