DEEP IMPURITY LEVELS IN SILICON UNDER HYDROSTATIC-PRESSURE

Autoria(s): XIA JB
Data(s)

1985
Identificador

http://ir.semi.ac.cn/handle/172111/14727

http://www.irgrid.ac.cn/handle/1471x/101398
Idioma(s)

英语
Fonte

XIA JB.DEEP IMPURITY LEVELS IN SILICON UNDER HYDROSTATIC-PRESSURE,CHINESE PHYSICS ,1985,5(2):471-477
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital