In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure

An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (DAC) for resistivity measurement under high pressure. The resistivity of nanocrystal ZnS is measured under high pressure up to 36.4 GPa by using designed DAC. The reversibility and hysteresis of the phase transition are observed. The experimental data is confirmed by an electric current field analysis accurately. The method used here can also be used under both ultrahigh pressure and high temperature conditions.

High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells

We have measured low-temperature photoluminescence (PL) and absorption spectra of In0.2Ga0.8As/GaAs multiple quantum wells (MQW's) under hydrostatic pressures up to 8 GPa. In PL, only a single peak is observed below 4.9 GPa corresponding to the n = 1 heavy-hole (HH) exciton in the InxGa1-xAs wells. Above 4.9 GPa, new PL lines related to X-like conduction band states appear. They are assigned to the type-II transition from the X(Z) states in GaAs to the HH subband of the InxGa1-xAs wells and to the zero-phonon line and LO-phonon replica of the type-I transition involving the X(XY) valleys of the wells. In addition to absorption peaks corresponding to direct exciton transitions in the wells, a new strong absorption feature is apparent in spectra for pressures between 4.5 and 5.5 GPa. This absorption is attributed to the pseudodirect transition between the HH subband and the X, state of the wells. This gives clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance in MQW structures. From experimental level splittings we determine the valence band offset and the shear deformation potential for X states in the In0.2Ga0.8As layer.

Photoluminescence of GaInP under high pressure

Photoluminescence of GaInP under hydrostatic pressure is investigated. The Gamma valley of disordered GaInP shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear relationship between lattice constant and hydrostatic pressure. The Gamma valleys of ordered GaInP rise more slowly than that of the disordered one and the relationship between the band gap and the pressure can not be explained in the same way. Taking into account the interactions between the Gamma valley and the folded L valleys, as well as, the X valleys, the experimental pressure dependences of the band gap of ordered GaInP epilayers are calculated and fitted quite well using first order perturbation theory. The results indicate that simultaneous ordering along [111] and [100] directions can occur in ordered GaInP. (C) 1996 American Institute of Physics.

HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS

We have measured low-temperature photoluminescence spectra of InAs quantum dots embedded in a GaAs crystalline matrix under hydrostatic pressures up to 7 GPa. Below 4.2 GPa the spectra are dominated by the Gamma-like electron-heavy hole (HH) exciton transition in the InAs dots. Above 4.2 GPa the spectra show two X-related luminescence bands which are attributed to the indirect type-I transition between X(Xy) and HH states of the dots and the type-II transition from X states in GaAs to InAs HH states, respectively. In the Gamma-X crossover regime we find evidence for a pronounced mixing interaction between InAs Gamma-like and GaAs X-like states. The corresponding interaction potential is estimated to be 9 meV.

Experimental Setup for Assessing the Energetic Materials Deflagration Propagation under High Temperature and High Pressure Conditions

The technology of "explosion in fractures" is one of new synthetic engineering methods used in low permeability reservoirs. The most important problem arose from the technology is to assess the deflagration propagation capability of milky explosives in rock fractures. In order to investigate detailed this problem in the laboratory, an experimental setup was designed and developed in which different conditions can be simulated. The experimental setup mainly includes two parts. One is the experimental part and the other is the measurement part. In the experimental setup, the narrow slots with different width can be simulated; meanwhile, different initial pressures and initial temperatures can be loaded on the explosives inside the narrow slots. The initial pressure range is from 0-60 MPa, and the initial temperatures range is from room temperature to 100 V. The temperature and the velocity of deflagration wave can be measured; meanwhile the corresponding pressure in the narrow slot is also measured. In the end, some typical measurement results are briefly presented and discussed.

On-line introduction of high-pressure gas-liquid sample for capillary gas chromatographic analysis

An on-line sample introduction technique in capillary gas chromatograph (CGC) for the analysis of high-pressure gas-liquid mixtures has been designed and evaluated. A sample loop of 0.05 muL and a washing solvent loop of 0.5 muL are mounted on a 10-port switching valve, which serves as the injection valve. A capillary resistor was connected to the vent of sample loop in order to maintain the pressure of the sample. Both the sample and the washing solvent are transferred into the split-injection port through a narrow bore fused silica capillary inserted into the injection liner through a septum. The volume of the liner is used both as the pressure-release damper and evaporation chamber of the sample. On-line analysis of both reactants and resultants in ethylene olimer reaction mixture at 5 MPa was carried out, which demonstrated the applicability of the technique. (C) 2004 Elsevier B.V. All rights reserved.

Bulk ultrafine binderless (W0.4Al0.6)C prepared by high pressure sintering

Pure (W0.4Al0.6)C powder of about 1 mu m in diameter was sintered by the high pressure sintering (HPS) process without the addition of any binder phase. The microstructure, Vickers micro hardness and density versus the sintering time and temperature are well described. The most suitable sintering condition under pressure of 4.5 GPa is 1873 K for 8 min. Under this sintering condition, the hardness can reach 2295 kg mm(-2) and the relative density can reach 98.6%.

Synthesis and high-pressure sintering of lanthanum magnesium hexaaluminate

Lanthanum magnesium hexaaluminate is a very important ceramic material for high temperature applications. In this paper lanthanum magnesium hexaaluminate has been synthesized directly by solid-state reaction. The forming mechanism was investigated by XRD. The SEM photographs show that the prepared powders are made of hexagonal plates. These powders can be well sintered at the high temperature (1600 degrees C) under the high pressure (4.5 GPa), and the relative density reaches 94.8%.

High-pressure sintered yttria stabilized zirconia ceramics

Fast densification of 8YSZ ceramics under a high pressure of 4.5 GPa was carried out at different temperatures (800, 1000, 1450 degrees C), by which a high relative density above 92% could be obtained. FT-Raman spectra indicate that the 8YSZ underwent a phase transition from partially tetragonal to partially cubic phase as temperatures increase from 1000 to 1450 degrees C when sintering under high pressure. The electrical properties of the samples under different high-pressure sintering conditions were measured by complex impedance method. The total conductivity of 0.92 x 10(-2) S cm(-1) at 800 degrees C has been obtained for 8YSZ under high pressure at 1450 degrees C, which is about 200 degrees C lower than that of the samples prepared by conventional pressureless sintering.

High-pressure sintering the novel light (W0.25Al0.75)C hard material without binder phase

A novel hard material of (W0.25Al75)C has been successfully prepared by the high-pressure sintering process without the addition of any binder phase. The high-pressure is a suitable and powerful technique for sintering the binderless hard material, the relative density of the hard material can reach 99.6% under high-pressure sintering. The density of the novel light hard material is only 6.2371 g cm(-3), which is much lighter than the normal hard material. The hardness of the light hard material can reach 18.89 GPa even the aluminum content get the astonished 75%.

Microstructures, mechanical properties and corrosion behavior of high-pressure die-cast Mg-4Al-0.4Mn-xPr (x=1, 2, 4, 6) alloys

Mg-4Al-0.4Mn-xPr (x = 1, 2, 4 and 6 wt.%) magnesium alloys were prepared successfully by the high-pressure die-casting technique. The microstructures, mechanical properties, corrosion behavior as well as strengthening mechanism were investigated. The die-cast alloys were mainly composed of small equiaxed dendrites and the matrix. The fine rigid skin region was related to the high cooling rate and the aggregation of alloying elements, such as Pr. With the Pr content increasing, the alpha-Mg grain sizes were reduced gradually and the amounts of the Al2Pr phase and All, Pr-3 phase which mainly concentrated along the grain boundaries were increased and the relative volume ratio of above two phases was changed. Considering the performance-price ratio, the Pr content added around 4 wt.% was suitable to obtain the optimal mechanical properties which can keep well until 200 degrees C as well as good corrosion resistance. The outstanding mechanical properties were mainly attributed to the rigid casting surface layer, grain refinement, grain boundary strengthening obtained by an amount of precipitates as well as solid solution strengthening.

Microstructure, tensile properties, and creep behavior of high-pressure die-cast Mg-4Al-4RE-0.4Mn (RE = La, Ce) alloys

High-pressure die-cast (HPDC) Mg-4Al-4RE-0.4Mn (RE = La, Ce) magnesium alloys were prepared and their microstructures, tensile properties, and creep behavior have been investigated in detail. The results show that two binary Al-Ce phases, Al11Ce3 and Al2Ce, are formed mainly along grain boundaries in Mg-4Al-4Ce-0.4Mn alloy, while the phase composition of Mg-4Al-4La-0.4Mn alloy contains only alpha-Mg and Al11La3. The Al11La3 phase comprises large coverage of the grain boundary region and complicated morphologies. Compared with Al11Ce3 phase, the higher volume fraction and better thermal stability of Al11La3 have resulted in better-fortified grain boundaries of the Mg-4Al-4La-0.4Mn alloy. Thus higher tensile strength and creep resistance could be obtained in Mg-4Al-4La-0.4Mn alloy in comparison with that of Mg-4Al-4Ce-0.4Mn. Results of the theoretical calculation that the stability of Al11La3 is the highest among four Al-RE intermetallic compounds supports the experimental results further.