HIGH-PRESSURE BEHAVIOR OF ELECTRONIC STATES IN GAAS/GA1-XALXAS MULTIPLE QUANTUM-WELLS

Autoria(s): WANG LJ; JIA WY; TANG RM; WANG YY; ZHOU JM; GE WK; WANG BS
Data(s)

1990
Identificador

http://ir.semi.ac.cn/handle/172111/14375

http://www.irgrid.ac.cn/handle/1471x/101222
Idioma(s)

英语
Fonte

WANG LJ; JIA WY; TANG RM; WANG YY; ZHOU JM; GE WK; WANG BS.HIGH-PRESSURE BEHAVIOR OF ELECTRONIC STATES IN GAAS/GA1-XALXAS MULTIPLE QUANTUM-WELLS,SUPERLATTICES AND MICROSTRUCTURES,1990,7(2):175-178
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital