808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice

808 nm high-power laser diodes are gown by MBE. In the laser structure, the combination of Si-doped GRIN (graded-index) region adjacent to n-AlGaAs cladding layer with reduced Be doping concentration near the active region has been used to diminish Be diffusion and oxygen incorporation. As compared with the laser structure which has undoped GRIN region and uniform doping concentration for Si and Be, respectively, in the cladding layers, the slope efficiency has increased by about 8%. Typical threshold current density of 300 A/cm(2) and the minimum threshold current density of 220 A/cm(2) for lasers with 500 mu m cavity length are obtained. A high slope efficiency of 1.3 W/A for coated lasers with 1000 mu m cavity length is also demonstrated, Recorded CW output power at room temperature has reached 2.3 W.

AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array

A novel AIN monolithic microchannel cooled heatsink for high power laser diode array is introduced.The high power stack laser diode array with an AIN monolithic microchannel heatsink is fabricated and tested.The thermal impedance of a 10 stack laser diode array is 0.121℃/W.The pitch between two adjacent bars is 1.17mm.The power level of 611W is achieved under the 20% duty factor condition at an emission wavelength around 808nm.

Optimal distance from high power laser diode to cylindrical microlens in a coupling system

In a practical coupling system, a cylindrical microlens is used to collimate the emission of a high powerlaser diode (LD) in the dimension perpendicular to the junction plane. Using passive alignment, the LD isplaced in the focus of the cylindrical microlens generally, regardless of the performance of the multimodeoptical fiber and the LD. In this paper, a more complete analysis is arrived at by ray-tracing technique,by which the angle θ of the ray after refraction is computed as a function of the angle θo of the ray beforerefraction. The focus of the cylindrical microlens is not always the optimal position of the LD. In fact, inorder to achieve a higher coupling efficiency, the optimal distance from the LD to the cylindrical microlensis dependent on not only the radius R and the index of refraction n of the cylindrical microlens, but alsothe divergence angle of the LD in the dimension perpendicular to the junction plane and the numericalaperture (NA) of the multimode optical fiber. The results of this discussion are in good agreement withexperimental results.

利用块状介质进行飞秒强激光脉冲的腔外压缩

高强度飞秒激光脉冲的腔外压缩是获得高次谐波阿秒脉冲驱动源的必要手段。实验研究了超强超短飞秒激光脉冲在经过块状介质后的光谱展宽和色散补偿压缩现象。单脉冲能量0．26mJ，脉宽50fs的激光脉冲经透镜在空气中聚焦后再入射到块状材料上，出射脉冲光谱被展宽到接近40nm。由于在块状材料中的自聚焦效应，出射光束质量变好并保持较小的空间啁啾。利用熔融石英棱镜对补偿带有正色散的出射脉冲，最后得到〉0．1mJ，19fs的压缩脉冲。利用SPIDER装置测量了出射脉冲的脉宽和光谱相位。整个系统的能量效率大约为35％，压缩后的

影响单电子非线性汤姆孙散射因素的研究

应用电子汤姆孙散射的经典理论，通过理论分析和计算机模拟，研究了超短超强激光脉冲作用下电子产生的辐射脉冲的性质．计算表明，在这种情况下，电子的辐射通常以阿秒脉冲列的形式出现．讨沦了不同激光场参数(包括激光强度、脉宽、初相位和偏振态)、不同电子初始状态(初始速度和位置)对辐射脉冲的时间和空间特性的影响．通常在相对论光强条件下，激光强度越大，电子辐射越强，脉宽越窄，中心频率越大，并且方向性越好；电子在线偏振激光中产生的辐射效率，比在同样强度下圆偏振激光中产生的效率更高；无论入射光是线偏振光，还是圆偏振光，辐射场

Thermal fracture characteristics induced by laser beam

The damage mechanism of a cracked material due to laser beam thermal shock is an important problem when the interactions of high power laser beam with materials are studied. The transient thermal stress intensity factors (TSIFs) for a center crack in an infinite plate subjected to laser beam thermal shock are investigated. When the crack is in the heat affected zone, the compressive thermal stress causes the crack surface to come into contact with each other over a certain contact length, but the high tensile stresses around the crack tip tend to open the crack. In this case, the problem may be treated as a pair of embedded cracks problem with a smooth closure condition of the center crack. The TSIFs and the crack contact lengths are calculated with different laser beam spatial shapes. The TSIFs induced by thermal shock are in marked different from those induced by general mechanical loading.

Interactions of a femtosecond intense laser with rare gas clusters in a dense jet\

A study on the interactions of high intensity (similar to 10(16) W/cm(2)) femtosecond laser pulses with rare gas clusters in a dense jet is performed. Energy absorption by Ar and Xe clusters is measured and it can be as high as 90%. Very energetic ions produced in the laser interaction with a dense cluster jet are detected by time-of-flight spectrometry and the maximum ion energy of Xe is up to 1.3 MeV. The average ion energies are found to increase with increasing cluster size and get saturated gradually. The average ion energies also show a strong directionality and the average ion energy in the direction parallel to the laser polarization vector is 40% higher than that perpendicular to it. The findings are discussed in terms of a model of charge-dependent ion acceleration.

High-energy LDA switched side-pumped electro-optical Q-switched Nd : YAG ceramic laser

By employing a uniformly compact side-pumping system, a high-energy electro-optical Q-switched Nd:YAG ceramic laser has been demonstrated. With 420 W quasi-cw laser-diode-array pumping at 808 ran and a 100 Hz modulating repetition rate, 50 mJ output energy at 1064 nm was obtained with 10 ns pulse width, 5 W average output power, and 5 MW peak power. Its corresponding slope efficiency was 29.8%. The laser system operated quite stably and no saturation phenomena have been observed, which means higher output energy could be expected. Laser parameters between ceramic and single-crystal Nd:YAG lasers have been compared, and pulse characteristics of Nd:YAG ceramic with different repetition rate have been investigated in detail. The still-evolving Nd:YAG ceramics are potential super excellent media for high-energy laser applications. (C) 2007 Optical Society of America.

Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

Passively mode-locked YVO4/Nd : YVO4 composite crystal laser with a semiconductor saturable absorber as a high reflector

A passively mode-locked diode end-pumped YVO4/Nd:YVO4 composite crystal laser with a five-mirror folded cavity was first demonstrated in this paper by using a low temperature semiconductor saturable absorber mirror grown by metal organic chemical vapor deposition. Both the Q-switching and continuous-wave mode locking operation were realized experimentally. A stable averaged output power of 10.15 W with pulse width of about 11.2-ps at a repetition rate of 113 MHz was obtained, and the optical-to-optical efficiency of 43% was achieved.

1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation

An InGaA1As multiquantum well (MQW) has been successfully overgrown on the absorptive InGaAsP corrugation for fabricating the 1.3 mu m gain coupled distributed feedback (DFB) lasers. The absorptive InGaAsP corrugation was efficaciously preserved during the overgrowth of the InGaA1As MQW active region. The absorptive InGaAsP corrugation has a relatively high intensity around the PL peak wavelength in comparison with that of the InGaA1As MQW. The fabricated DFB laser exhibited a side mode suppression ratio of 40 dB together with a high single-mode yield of 90%.

高强度飞秒激光脉冲在空气中的自压缩

利用高重复频率(1kHz)、吉瓦级飞秒激光脉冲实验验证了高强度飞秒脉冲在空气中的自压缩现象，研究了入射脉冲在不同初始啁啾情况下经空气中聚焦成丝后，时域及频域特性随入射脉冲能量的变化规律．实验结果表明，在无需后继色散补偿情况下，高强度飞秒脉冲仅通过在空气中的非线性传输过程就可以实现脉冲压缩；在入射脉冲为负啁啾情况下，实验观察到脉冲光谱及时域宽度同时得到压缩，并可获得比激光源所能提供的更短的近双曲正割型变换限脉冲．

双色激光场中激光强度和脉宽对线性多原子分子离子电离的影响

利用强激光场电离和离解分子来研究分子激发态的波包结构是强场物理的重要研究方向。利用短时指数传播子对称分割法和快速傅里叶变换技术。数值求解了一维含时Schr（oe）dinger方程，探讨了双色激光场中激光的基波和谐波强度之间的不同配比以及脉宽对线性多原子分子离子电离的影响。理论计算结果表明：基波和谐波的相对相位为π时，尽管随着激光的基波和谐波强度之间配比的变化，电离几率随原子间距变化的趋势基本保持不变，但在一定的激光基波强度下(1．2×10^13～1．2×10^15W／cm^2)，激光基波强度的变化可以明显