1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation


Autoria(s): Feng W; Pan JQ; Wang L; Liao ZY; Cheng YB; Chen DB; Zhao LJ; Zhu HL; Wang W
Data(s)

2007

Resumo

An InGaA1As multiquantum well (MQW) has been successfully overgrown on the absorptive InGaAsP corrugation for fabricating the 1.3 mu m gain coupled distributed feedback (DFB) lasers. The absorptive InGaAsP corrugation was efficaciously preserved during the overgrowth of the InGaA1As MQW active region. The absorptive InGaAsP corrugation has a relatively high intensity around the PL peak wavelength in comparison with that of the InGaA1As MQW. The fabricated DFB laser exhibited a side mode suppression ratio of 40 dB together with a high single-mode yield of 90%.

Identificador

http://ir.semi.ac.cn/handle/172111/9362

http://www.irgrid.ac.cn/handle/1471x/64093

Idioma(s)

英语

Fonte

Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Wang, L (Wang, L.); Liao, ZY (Liao, Z. Y.); Cheng, YB (Cheng, Y. B.); Chen, DB (Chen, D. B.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) .1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,AUG 2007,22 (8):859-862

Palavras-Chave #光电子学 #THERMAL DEFORMATION
Tipo

期刊论文