1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
| Data(s) |
2007
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|---|---|
| Resumo |
An InGaA1As multiquantum well (MQW) has been successfully overgrown on the absorptive InGaAsP corrugation for fabricating the 1.3 mu m gain coupled distributed feedback (DFB) lasers. The absorptive InGaAsP corrugation was efficaciously preserved during the overgrowth of the InGaA1As MQW active region. The absorptive InGaAsP corrugation has a relatively high intensity around the PL peak wavelength in comparison with that of the InGaA1As MQW. The fabricated DFB laser exhibited a side mode suppression ratio of 40 dB together with a high single-mode yield of 90%. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Wang, L (Wang, L.); Liao, ZY (Liao, Z. Y.); Cheng, YB (Cheng, Y. B.); Chen, DB (Chen, D. B.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) .1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,AUG 2007,22 (8):859-862 |
| Palavras-Chave | #光电子学 #THERMAL DEFORMATION |
| Tipo |
期刊论文 |
