Hexagonal selenium nanowires synthesized via vapor-phase growth

Hexagonal Se nanowires were synthesized using a simple vapor-phase growth with the assistance of the silicon powder as a source material, which turned out to be very important in the growth of the Se nanowires. The morphology, microstructure, and chemical compositions of the nanowires were characterized using various means (XRD, SEM, TEM, XPS, and Raman spectroscopy). The possible growth mechanism of the Se nanowires was explained. The as-grown Se nanowires may find wide applications in biology and optoelectronics.

One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering

We observed a transition from film to vertically well-aligned nanorods for ZnO grown on sapphire (0001) substrates by metalorganic chemical vapor deposition. A growth mechanism was proposed to explain such a transition. Vertically well-aligned homogeneous nanorods with average diameters of similar to 30, 45, 60, and 70 nm were grown with the c-axis orientation. Raman scattering showed that the E-2 (high) mode shifted to high frequency with the decrease of nanorod diameters, which revealed the dependence of nanorod diameters on the stress state. This dependence suggests a stress-driven diameter-controlled mechanism for ZnO nanorod arrays grown on sapphire (0001) substrates. (c) 2005 American Institute of Physics.

Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate

Single-crystalline alpha-Si3N4 nanowires are controlled to grow perpendicular to the wet-etched trenches in the SiO0.94 film on the plane of the Si substrate without metal catalysis. A detailed characterization is carried out by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The photoluminescence at 600 nm from alpha-Si3N4 nanowires is attributed to the recombination at the defect state formed by the Si dangling bond N3 equivalent to Si-center dot. The growth mechanism is considered to be related to the catalysis and nitridation of SiO nanoclusters preferably re-deposited around the inner corner of the trenches, as well as faster Si diffusion along the slanting side walls of the trenches. This simple direction-controlled growth method is compatible with the CMOS process, and could facilitate the fabrication of alpha-Si3N4 nanoelectronic or nanophotonic devices on the Si platform.

Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures

Vertically well-aligned ZnO nanoridge, nanorod, nanorod-nanowall junction, and nanotip arrays have been successfully synthesized on Si (100) substrates using a pulsed laser deposition prepared ZnO film as seed layer by thermal evaporation method. Experimental results illustrated that the growth of different morphologies of ZnO nanostructures was strongly dependent upon substrate temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies showed that the ZnO nanostructures were single crystals with a wurtzite structure. Compared with those of the other nanostructures, the photoluminescence (PL) spectrum of nanorod-nanowall junctions showed the largest intensity ratio of ultraviolet (UV) to yellow-green emission and the smallest full-width at half-maximum (FWHM) of the UV peak, reflecting the high optical quality and nearly defect free of crystal structure. The vertical alignment of the nanowire array on the substrate is attributed to the epitaxial growth of the nanostructures from the ZnO buffer layer. The growth mechanism was also discussed in detail. (c) 2006 Elsevier B.V. All rights reserved.

Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure

The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (100) GaAs Substrates by magnetron Sputtering has been investigated and even epitaxial lnAs(0.3)Sb(0.7) films have been successfully obtained. A strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. A qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed. (c) 2005 Elsevier B.V. All rights reserved.

Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition

Low-temperature growth of cubic GaN at 520 degrees C was achieved using CCl4 as an additive by metalorganic chemical-vapor deposition (MOCVD) on GaAs substrate. X-Ray measurement confirmed that the films are single-phase cubic GaN. Scanning electron microscopy (SEM) and reflection high-energy electron diffraction (RHEED) were also used to analyze the surface morphology and the quality of films. The evolution of surface morphology suggests that CCl4 can reduce the hopping barrier and thus Ga adatoms are able to diffuse easily on the GaN surface. (C) 1998 Elsevier Science S.A. All rights reserved.

Aggregation-based growth of silver nanowires at room temperature

We describe an aggregation-based growth mechanism for formation of silver nanowires at room temperature. It is found that the pH of solution and the concentration of L-cysteine capping molecules have an important effect on the formation and growth of nanowires. Characterization by atomic force microscopy (AFM) and UV-vis spectroscopy recorded as time clearly shows that the silver nanowires are grown at the expense of nanoparticles.

Growth of cationic lipid toward bilayer, lipid membrane by solution spreading: scanning probe microscopy study

The growth of cationic lipid dioctadecyldimethylammonium bromide (DODAB) toward bilayer lipid membrane (BLM) by solution spreading on cleaved mica surface was studied by atomic force microscopy (AFM). Bilayer of DODAB was formed by exposing mica to a solution of DODAB in chloroform and subsequently immersing into potassium chloride solution for film developing. AFM studies showed that at the initial stage of the growth, the adsorbed molecules exhibited the small fractal-like aggregates. These aggregates grew up and expanded laterally into larger patches with time and experienced from monolayer to bilayer, finally a close-packed bilayer film (5.4 +/- 0.2 nm) was approached. AFM results of the film growth process indicated a growth mechanism of nucleation, growth and coalescence of dense submonolayer, it revealed the direct information about the film morphology and confirmed that solution spreading was an effective technique to prepare a cationic bilayer in a short time.

Effect of alginic acid decomposing bacterium on the growth of Laminaria japonica (Phaeophyceae)

We collected the diseased blades of Laminaria japonica from Yantai Sea Farm from October to December 2002, and the alginic acid decomposing bacterium on the diseased blade was isolated and purified, and was identified as Alterornonas espejiana. This bacterium was applied as the causative pathogen to infect the blades of L. japonica under laboratory conditions. The aim of the present study was to identify the effects of the bacterium on the growth of L. japonica, and to find the possibly effective mechanism. Results showed that: (1) The blades of L. japonica exhibited symptoms of lesion, bleaching and deterioration when infected by the bacterium, and their growth and photosynthesis were dramatically suppressed. At the same time, the reactive oxygen species (ROS) generation enhanced obviously, and the relative membrane permeability increased significantly. The contents of malonaldehyde (MDA) and free fatty acid in the microsomol membrane greatly elevated, but the phospholipid content decreased. Result suggested an obvious peroxidation and deesterrification in the blades of L. japonica when infected by the bacterium. (2) The simultaneous assay on the antioxidant enzyme activities demonstrated that superoxide dismutase (SOD) and catalase (CAT) increased greatly when infected by the bacterium, but glutathione peroxidase (Gpx) and ascorbate peroxidase (APX) did not exhibit active responses to the bacterium throughout the experiment. (3) The histomorphological observations gave a distinctive evidence of the severity of the lesions as well as the relative abundance in the bacterial population on the blades after infection. The bacterium firstly invaded into the endodermis of L. japonica and gathered around there, and then resulted in the membrane damage, cells corruption and ultimately, the death of L. japonica.

Laser Melted TiC Reinforced Nickel Aluminide Matrix in situ Composites

Titanium carbide reinforced nickel aluminide matrix in situ composites were produced using a newly patented laser melting furnace. Microstructure of the laser melted TiC/(Ni3Al–NiAl) in situ composites was characterized by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results showed that the constituent phases in the laser melted in situ composites are TiC, Ni3Al and NiAl. Volume fraction of TiC and NiAl increase with increasing content of titanium and carbon. The growth morphology of the reinforcing TiC carbide has typically faceted features, indicating that the lateral growth mechanism is still predominant growth mode under rapid.

配液结晶法制备溶菌酶蛋白质晶体的生长机理研究

采用配液结晶法制取了溶菌酶蛋白质晶体,使用动态光散射测量了溶液中聚集体的颗粒度几率分布;使用Zeiss显微镜测定了溶菌酶(110)晶面的生长速度.实验表明:随着蛋白质和NaCl浓度的增加,溶液中聚集体的颗粒尺寸也相应增加.随着反应时间的增加,溶菌酶分子在溶液中的聚集反应,逐渐达到平衡;在蛋白质和NaCl浓度较高时,溶菌酶晶体的(110)面生长较快,而在蛋白质和NaCl浓度较低时,该晶面生长较慢.基于二维成核生长机理,从晶体生长动力学理论方程出发,计算了二维成核的形成能a=4.01×10-8J?cm-2.

On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method

Two-dimensional ZnO nanowall networks were grown on ZnO-coated silicon by thermal evaporation at low temperature without catalysts or additives. All of the results from scanning electronic spectroscope, X-ray diffraction and Raman scattering confirmed that the ZnO nanowalls were vertically aligned and c-axis oriented. The room-temperature photoluminescence spectra showed a dominated UV peak at 378 nm, and a much suppressed orange emission centered at similar to 590 nm. This demonstrates fairly good crystal quality and optical properties of the product. A possible three-step, zinc vapor-controlled process was proposed to explain the growth of well-aligned ZnO nanowall networks. The pre-coated ZnO template layer plays a key role during the synthesis process, which guides the growth direction of the synthesized products. (C) 2007 Elsevier B.V. All rights reserved.

Direct observation of adsorption sites of protein impurities and their effects on step advancement of protein crystals

We measured noninvasively step velocities of elementary two-dimensional (2D) islands on {110} faces of tetragonal lysozyme crystals, under various supersaturations, by laser confocal microscopy combined with differential interference contrast microscopy. We studied the correlation between the effects of protein impurities on the growth of elementary steps and their adsorption sites on a crystal surface, using three kinds of proteins: fluorescent-labeled lysozyme (F-lysozyme), covalently bonded dimers of lysozyme (dimer), and a 18 kDa polypeptide (18 kDa). These three protein impurities suppressed the advancement of the steps. However, they exhibited different supersaturation dependencies of the suppression of the step velocities. To clarify the cause of this difference, we observed in situ the adsorption sites of individual molecules of F-lysozyme and fluorescent-labeled dimer (F-dimer) on the crystal surface by single-molecule visualization. We found that F-lysozyme adsorbed preferentially on steps (i.e., kinks), whereas F-dimer adsorbed randomly on terraces. Taking into account the different adsorption sites of F-lysozyme and F-dimer, we could successfully explain the different effects of the impurities on the step velocities. These observations strongly suggest that 18 kDa also adsorbs randomly on terraces. Seikagaku lysozyme exhibited a complex effect that could not alone be explained by the two major impurities (dimer and 18 kDa) present in Seikagaku lysozyme, indicating that trace amounts of other impurities significantly affect the step advancement.

Small angle X-ray scattering of the colloidal crystal

The monodisperse polystyrene spheres are assembled into the colloidal crystal on the glass substrate by vertical deposition method, which is aimed at the so-called photonic crystal applications. The structural information of the bulk colloidal crystal is crucial for understanding the crystal growth mechanism and developing the various applications of colloidal crystal. Small-angle X-ray scattering (SAXS) technique was used to obtain the bulk structure of the colloidal crystal at Beamline 1W2A of BSRF. It is found that the SAXS pattern is sensitive to the relative orientation between the colloidal sample and the incident X-ray direction. The crystal lattice was well distinguished and determined by the SAXS data.

The effect of diffusion and overhangs/vacancies on the microstructure of zig-zag thin film

Basing on some growth models of thin film, we have investigated the growth mechanism of glancing angle deposition (GLAD) film. The simulation verifies that the overhangs/vacancies also contribute to the columnar growth as well as the self-shadowing effect for GLAD thin film. Besides, we have studied the effect of the deposition rate, surface and bulk diffusions on the microstructure of thin film using the time-dependent Monte Carlo method. The results show that the surface and bulk diffusions can significantly enhance the packing density of thin film in GLAD growth, and the increase of the deposition rate induce the moderate decrease of the packing density. (c) 2006 Elsevier B.V. All rights reserved.