One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering


Autoria(s): Cong, GW; Wei, HY; Zhang, PF; Peng, WQ; Wu, JJ; Liu, XL; Jiao, CM; Hu, WG; Zhu, QS; Wang, ZG
Data(s)

2005

Resumo

We observed a transition from film to vertically well-aligned nanorods for ZnO grown on sapphire (0001) substrates by metalorganic chemical vapor deposition. A growth mechanism was proposed to explain such a transition. Vertically well-aligned homogeneous nanorods with average diameters of similar to 30, 45, 60, and 70 nm were grown with the c-axis orientation. Raman scattering showed that the E-2 (high) mode shifted to high frequency with the decrease of nanorod diameters, which revealed the dependence of nanorod diameters on the stress state. This dependence suggests a stress-driven diameter-controlled mechanism for ZnO nanorod arrays grown on sapphire (0001) substrates. (c) 2005 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/8396

http://www.irgrid.ac.cn/handle/1471x/63728

Idioma(s)

英语

Fonte

Cong, GW; Wei, HY; Zhang, PF; Peng, WQ; Wu, JJ; Liu, XL; Jiao, CM; Hu, WG; Zhu, QS; Wang, ZG .One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering ,APPLIED PHYSICS LETTERS,DEC 5 2005,87 (23):Art.No.231903

Palavras-Chave #半导体材料 #NANOWIRES
Tipo

期刊论文