The local-field corrective effect on Rabi oscillation of ultrashort pulse excitation in semiconductor GaAs

Rabi oscillation of the thin bulk semiconductor GaAs, which takes into account the effect of the local-field correction induced by the interacting excitons, is investigated by numerically solving the semiconductor Bloch equations. It is found, for a 2 pi few-cycle pulse excitation, that two incomplete Rabi-floppings emerge due to the competition between the Rabi frequency of the incident pulse and the internal-field matrices. Furthermore, for a sub-cycle 2 pi pulse excitation a complete Rabi-flopping can occur because of the absolute phase effect. We ascribe these characteristics of the Rabi oscillation to the renormalized Rabi frequency.

GaAs/AlGaAs MQW材料激子吸收谱的电场效应及pin结构自电光效应器件（SEED)的研究

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利用分子束外延研究GaAs半导体NEA光电发射材料

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Si-GaAs的电学补偿机理及微区均匀性对电子迁移率的影响

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分子束外延Inx-xAs/GaAs失配异质结材料及其性能研究

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GaAs/GaAlAs短周期超晶格中的Wannier-Stark效应

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Si-GaAs中El2的光淬灭效应及有关深能级行为的研究

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分子束外延GaAs/GaP失配异质结材料及其性能研究

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LEC半绝缘GaAs中EL2缺陷的亚稳性和光恢复效应与深能级缺陷的性质

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OTCS自动测试系统及高阻GaAs材料深能级性质的研究

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P2S5/NH4OH对GaAs表面钝化机理的研究

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小尺寸GaAs MESFET二维数值模拟

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z