The local-field corrective effect on Rabi oscillation of ultrashort pulse excitation in semiconductor GaAs
Data(s) |
2008
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Resumo |
Rabi oscillation of the thin bulk semiconductor GaAs, which takes into account the effect of the local-field correction induced by the interacting excitons, is investigated by numerically solving the semiconductor Bloch equations. It is found, for a 2 pi few-cycle pulse excitation, that two incomplete Rabi-floppings emerge due to the competition between the Rabi frequency of the incident pulse and the internal-field matrices. Furthermore, for a sub-cycle 2 pi pulse excitation a complete Rabi-flopping can occur because of the absolute phase effect. We ascribe these characteristics of the Rabi oscillation to the renormalized Rabi frequency. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Luo Jian;Xia Keyu;钮月萍;龚尚庆 .,J. Mod. Opt.,2008,55(11):1713-1722 |
Palavras-Chave | #激光技术;激光物理与基本理论 #Rabi oscillation #ultrashort pulse #absolute phase #exciton #local field |
Tipo |
期刊论文 |