51 resultados para Diderot, Denis, 1713-1784
Resumo:
The expression vector containing phbB and ble genes was constructed and transformed into cell-wall-deficient strain Chlamydomonas reinhardtii CC-849 by the glass-head method. The transgenic alga was selected and maintained in the TAP agar plates containing 10 mug/mL Zeomycin. Transgenic alga, which could express phbB at the transcriptional level, was obtained and further confirmed with PCR, Southern blot and RT-PCR-DNA hybridization analysis.
Resumo:
A putative chitinase gene was identified within the fragment EcoRI-K of the Helicoverpa armigera single-nucleocapsid nucleopolyhedrovirus (HearNPV, also called HaSNPIV) genome. The open reading frame (ORF) contains 1713 nucleotides (nt) and encodes a protein of 570 amino acids (aa) with a predicted molecular weight of 63.6 kDa. Transcription started at about 18 h post infection (p.i.) and the protein was first detected at 20 h p.i. The times of transcription and expression are characteristic of a late baculovirus gene. 5' and 3' RACE indicated that transcription was initiated from the adenine residue located at -246 nt upstream from the ATG start site and the poly (A) tail was added at 267 nt downstream from the stop codon. This is the first report on the molecular characterization of a chitinase from a single nucleocapsid NPV. The phylogeny of baculoviral chitinase genes were extensively examined in comparison with chitinases derived from bacteria, fungi, nematode, actinomycetes, viruses, insects and mammals. Neighbor-joining and most parsimony analyses showed that the baculoviral chitinases were clustered exclusively within gamma-proteobacteria. Our results strongly suggest that baculoviruses acquired their chitinase genes from bacteria. (C) 2004 Elsevier B.V. All rights reserved.
Resumo:
The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(111) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness of HT AlN buffer layer, and the optimized thickness of the HT AlN buffer layer is about 110 nm. Together with the low-temperature (LT) AlN interlayer, high-quality GaN epilayer with low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.
Resumo:
We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 mu m above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60 mu m respectively, a peak output power more than 500 mW is achieved in pulsed mode operation. A low threshold current density J(th) = 2.6 kA/cm(2) gives the devices good lasing characteristics. In a drive frequency of 1 kHz, the laser operates up to 20% duty cycle.
Resumo:
The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).
Resumo:
Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.
Resumo:
This paper presents a new and original method for dynamical analysis of multistage cyclic structures such as turbomachinery compressors or turbines. Each stage is modeled cyclically by its elementary sector and the interstage coupling is achieved through a cyclic recombination of the interface degrees of freedom. This method is quite simple to set up; it allows us to handle the finite element models of each stage's sector directly and, as in classical cyclic symmetry analysis, to study the nodal diameter problems separately. The method is first validated on a simple case study which shows good agreements with a complete 360 deg reference calculation. An industrial example involving two HP compressor stages is then presented. Then the forced response application is presented in which synchronous engine order type excitations are considered.
Resumo:
网络取证是对现有网络安全体系的必要扩展,已日益成为研究的重点.但目前在进行网络取证时仍存在很多挑战:如网络产生的海量数据;从已收集数据中提取的证据的可理解性;证据分析方法的有效性等.针对上述问题,利用模糊决策树技术强大的学习能力及其分析结果的易理解性,开发了一种基于模糊决策树的网络取证分析系统,以协助网络取证人员在网络环境下对计算机犯罪事件进行取证分析.给出了该方法的实验结果以及与现有方法的对照分析结果.实验结果表明,该系统可以对大多数网络事件进行识别(平均正确分类率为 91.16%),能为网络取证人员提供可理解的信息,协助取证人员进行快速高效的证据分析.
Resumo:
潮汕坳陷是中生界地层为主的沉积坳陷,被认为是南海油气勘探的重要勘探领域。潮汕坳陷已有丰富的多道反
Resumo:
Photoluminescence of GaInP epilayers under hydrostatic pressure is investigated. The Gamma valley of disordered GaInP shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear dependence of lattice constant on the hydrostatic pressure. The Gamma valleys of ordered GaInP epilayers rise slower than that of the disordered one. Considering the interactions between the Gamma valley and folded L and X valleys, the pressure dependence of the band gap of ordered GaInP is calculated and fitted. The results demonstrate that not only ordering along [111] directions but also sometimes simultaneous ordering along [111] and [100] directions can occur in ordered GaInP. (C) 1996 American Institute of Physics.
Resumo:
The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).