Resonant cavity based compact efficient antireflection structures for photonic crystals

We propose an effective admittance ( EA) method to design antireflection structures for two-dimensional photonic crystals (PCs). We demonstrate that a compact and efficient antireflection structure, which is difficult to obtain by the conventional admittance matching method, can be readily designed by the EA method. The antireflection structure consists of an air slot resonant cavity that is constructed only with the materials that constitute the PC. Compared with a bare PC, the reflection from a PC with an antireflection structure is reduced by two orders of magnitude over a wide bandwidth. To confirm the presented EA method, finite-difference time-domain (FDTD) simulations are performed, and the results from the FDTD and the EA method are in good agreement.

Temperature-independent FBG pressure sensor with high sensitivity

This study develops a fiber Bragg grating (FBG) pressure sensor partly shielded with a metal tube. The thermal-strain cross effect is avoided and its pressure sensitivity is increased to -2.44 x 10(-3) MPa, about 1200 times as that of a bare fiber grating. Due to its good sensing linearity, this sensor can be applied in the measurement of hydraulic pressure and vibration. (c) 2006 Elsevier Inc. All rights reserved.

Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance

Self-assembled InAs quantum dots (QDs) have been fabricated by depositing 1.6, 1.8, 2.0 and 2.5 monolayer (ML) InAs on surfaces of the undoped-n(+) (UN+) type GaAs structure. Room temperature contactless electroreflectance (CER) was employed to study the built-in electric field and the surface Fermi level pinning of these QD-covered UN+ GaAs samples. The CER results show that 1.6 ML InAs QDs on GaAs do not modify the Fermi level, whereas for samples with more than 1.6 ML InAs coverage, the surface Fermi level is moved to the valence band maximum of GaAs by about 70 meV (which is independent of the InAs deposition thickness) compared to bare GaAs. It is concluded that the modification of InAs coverage on the Fermi level on the GaAs surface is due to the QDs, rather than to the wetting layer. (C) 2003 American Institute of Physics.

Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation

The growth of SiC epilayers on C-face (0 0 0 1) sapphire (alpha-Al2O3) has been performed using CVD method. We found that the quality of SiC epilayers has been improved through the nitridation of substrates by exposing them to ammonia ambient, as compared to growth on bare sapphire substrates. The single crystallinity of these layers was verified by XRD and double crystal XRD measurements. Atomic force microscopy was used to evaluate the surface morphology. Infrared reflectivity and Raman scattering measurement were carried out to investigate the phonon modes in the grown SiC. Detailed Raman analysis identified the 6H nature of the as-grown SiC films. (C) 2002 Elsevier Science B.V. All rights reserved.

Modulation spectroscopy of GaAs covered by InAs quantum dots

Contactless: electroreflectance has been employed at room temperature to study the Fermi level pinning at undoped-n(+) GaAs surfaces covered by 1.6 and 1.8 monolayer (ML) InAs quantum dots (QDs). It is shown that the 1.8 ML InAs QD moves the Fermi level at GaAs surface to the valence band maximum by about 70 meV compared to bare GaAs, whereas 1.6 ML InAs on GaAs does not modify the Fermi level, It is confirmed that the modification of the 1.8 ML InAs deposition on the Fermi level at GaAs surface is due to the QDs, which are surrounded by some oxidized InAs facets, rather than the wetting layer.

Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells

Cyclotron resonance in CdTe/CdMgTe quantum wells (QWs) was studied. Due to the polaron effect the zero-field effective mass is strongly influenced by the QW width. The experimental data have been described theoretically by taking into account electron-phonon coupling and the nonparabolicity of the conduction band. The subband structure was calculated self-consistently. The best fit was obtained for an electron-phonon coupling constant alpha = 0.3 and bare electron mass of m(b) = 0.092m(0).

Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy were studied. Photoluminescence measurements on a series of samples with different well widths and N compositions were used to evaluate the effects. The intermixing of GaNAs and GaAs layers was clearly enhanced by the presence of a SiO2-cap layer. However, it was strongly dependent on the N composition. After annealing at 900 degreesC for 30 s, a blueshift up to 62 meV was observed for the SiO2-capped region of the sample with N composition of 1.5%, whereas only a small blueshift of 26 meV was exhibited for the bare region. For the sample with the N composition of 3.1%, nearly identical photoluminescence peak energy shift for both the SiO2-capped region and the bare region was observed. It is suggested that the enhanced intermixing is mainly dominated by SiO2-capped layer induced defects-assisted diffusion for the sample with smaller N composition, while with increasing N composition, the diffusion assisted by interior defects become predominant. (C) 2001 American Institute of Physics.

Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test

Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus E-ps prestress s(0), and fracture strength s(max) of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates possess similar values of E-ps and s(0) but quite different values of s(max). The statistical analysis of fracture strengths were performed by Weibull distribution function and the fracture origins were further predicted.

Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

纯公钥模型下对NP语言的高效并发零知识证明系统

提出了一种从3轮公开掷币的对任何NP语言的诚实验证者零知识证明系统到纯公钥模型下4轮f轮最优）对同一语言的具有并发合理性的并发零知识证明系统．该转化方法有如下优点：1）它只引起D（1）（常数个）额外的模指数运算，相比DiCrescenzo等人在ICALP05上提出的需要qn）个额外的模指数运算的转化方法孩系统在效率上有着本质上的提高，而所需的困难性假设不变；2）在离散对数假设下，该转化方法产生一个完美零知识证明系统．注意到DiCrescenzo等人提出的系统只具有计算零知识性质．该转化方法依赖于一个特殊的对承诺中的离散对数的3轮诚实验证者零知识的证明系统．构造了两个基于不同承诺方案的只需要常数个模指数运算的系统这种系统可能有着独立价值．

典型黄土坡面天然草地产流产沙规律试验

通过野外模拟降雨试验,研究黄土区天然草坡的产流、产沙规律。试验设2个地类(草地和裸地)、3个降雨强度水平和3个坡度水平。结果表明:坡面初始产流时间与降雨强度呈负相关关系,与裸地相比,草地在降雨强度较大时(>2.0 mm/min)加快坡面产流,在中(1.0~2.0 mm/min)、小等级降雨强度(<1.0 mm/min)下则延缓产流;降雨强度较大时,裸地大坡度的产流强度随时间呈对数函数形式增长,中小等级降雨强度下的增长方式不符合这一规律;与中、小等级降雨强度不同,裸地在降雨强度较大时的产流产沙过程不一致;与裸地相比,草地的产流过程更为复杂,并不符合产流强度随时间呈对数函数形式增长的一般规律,草地产沙过程线与产流过程线的相对吻合程度受降雨强度的影响不明显。

黄土退耕坡地植物根系分布特征及其对土壤养分的影响

为明确黄土退耕坡地植物根系分布特征及其对土壤养分的影响,在陕西神木六道沟流域选取退耕30 a的长芒草坡地和裸地坡面,利用图像处理和常规分析方法研究了长芒草根系和土壤养分在土壤剖面分布及其相互关系。结果表明: 长芒草根系主要分布在0～50 cm土层,分布规律可用指数函数来模拟。有根系存在的土壤表层有机质、全氮、全磷、硝态氮和铵态氮含量均高于无根系存在的坡面。在有根系存在时土壤有机质、全氮和硝态氮的具有明显的表聚现象。0～ 50 cm有机质、全氮、硝态氮和铵态氮随深度的变化可用幂函数来表示,而全磷随深度呈线性相关。0～50 cm的土壤养分与根长密度的关系可以用线性函数来表示。其研究结果为坡面退耕地土壤管理提供科学依据。

黄土高原侵蚀区长芒草对坡地土壤水分养分的影响

在黄土高原神木六道沟流域选相邻退耕坡地和裸地,均匀布点采样结合室内分析,采用SPSS处理数据,研究30龄长芒草(Stipa bungeana)对土壤水分、养分的影响。结果表明:在长芒草根系分布区土壤水分下降很快,并且形成干层,其中40~60 cm含水量均低于5.5%,最低达3.2%;同时,长芒草可使土壤养分在表层累积,而降低20~50cm土层处养分含量;全氮、全磷、有机质、硝态氮和铵态氮含量均随土层的加深而降低。

Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well

Effects of SiO2, encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO2-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO2 cap-layer. A simple model [1] was used to describe the SiO2-enhanced blueshift of the low temperature PL peak energy.