水稻(Oryza sativa L. ssp japonica)幼苗根质膜蛋白质组分析

根质膜具有重要的生物学功能，它参与了根响应脱落酸（ABA）的一系列活动。尽管已经有很多有关ABA影响根的生长和发育的报道，但是在蛋白质组水平上研究参与ABA信号转导及相关活动的质膜蛋白质的报道还未见到。我们期望利用蛋白质组学技术平台研究外源ABA胁迫下水稻根质膜与ABA功能相关的蛋白质组的变化。 本论文通过双向电泳（2DE）结合质谱（MALDI-TOF MS 和 MALDI-TOF/TOF MS）分析的方法鉴定了102个质膜相关蛋白质。这些蛋白质功能涉及到跨膜运输（16.2%）、胁迫反应（14.3%）、物质运输（4.8%）、细胞骨架动态变化（5.7%）、细胞壁重建（3.8%）、碳代谢和能量循环（13.3%）、蛋白质代谢（14.3%）、信号转导（18.1%）和其他功能的蛋白质（4.8%），以及未知功能的蛋白质（2.9%）。其中大约30％的蛋白质以同工型的形式存在。在这些鉴定结果中，有10个斑点（代表10种蛋白质）已被报道为质膜特异的蛋白质;68个蛋白质斑点（代表58种蛋白质）是质膜相关蛋白质。其余54个蛋白质斑点（代表42种蛋白质）是首次在水稻根的质膜囊泡中被鉴定出来。 在ABA处理条件下，我们在2DE胶上发现了15个响应ABA调节的蛋白质斑点。9个上调的蛋白质斑点分别代表以下9种蛋白质：vacuolar proton-ATPase A subunit, vacuolar ATPase B subunit、patatin、 Salt-stress root protein RS1、谷氨酰氨合成酶（Glutamine synthetase，GS）、OSR40c1、H+-exporting ATPase （vacuolar ATPase E subunit）、甘油醛-3-磷酸脱氢酶I型（glyceraldehyde-3- phosphate dehydrogenase, type I，GADPH）和醛缩酶C-1（aldolase C-1）。6个下调的蛋白质斑点分别代表4种蛋白质：endosperm lumenal binding protein、remorin protein、富含脯氨酸蛋白质（glycine-rich protein，GRP）和蔗糖合成酶（sucrose synthase, SuSy）。其中，OSR40c1和endosperm lumenal binding protein与蛋白质合成相关，从它们与ABA的关系中可以看出，ABA可能抑制了细胞的蛋白质合成。而vacuolar proton-ATPase A subunit、vacuolar ATPase B subunit和 H+-exporting ATPase参与了细胞质pH的调控，ABA致使了细胞质pH的上升。甘油醛-3-磷酸脱氢酶I型、醛缩酶C-1和蔗糖合酶参与了细胞壁的生长发育，ABA的作用可能导致了细胞壁生长发育的延迟。ABA促使Patatin上升，其作用可能与质膜膜脂的降解有关。而ABA的刺激也使谷氨酰氨合成酶的表达显著上升，谷氨酰氨合成酶可以去除细胞内有害的游离NH+4。同时还有未知功能的富含脯氨酸蛋白质（glycine-rich protein，GRP）同样受到ABA的诱导，但具体的功能及其与ABA的关系还要进一步的实验证据。

Anti-HIV-1 property of trichosanthin correlates with its ribosome inactivating activity

Trichosanthin (TCS) is a type I ribosome inactivating (RI) protein possessing anti-tumor and antiviral activity, including human immunodeficiency virus (HIV). The mechanism of these actions is not entirely clear, but is generally attributed to its RI property. In order to study the relationship between the anti-HIV-1 activity of TCS and its RI activity, three TCS mutants with different RI activities were constructed by using site-directed mutagenesis. The anti-HIV-1 activities of the three mutants were tested in vitro. Results showed that two TCS mutants, namely TCSM((120-123)), TCSE160A/E189A, with the greatest decrease in RI activity, lost almost all of the anti-HIV activity and cytopathic effect. Another mutant TCSR122G, which exhibited a 160-fold decrease in RI activity, retained some anti-HIV activity. The results from this study suggested that RI activity of TCS may have significant contribution to its anti-HIV-1 property. (C) 2002 Published by Elsevier Science B.V. on behalf of the Federation of European Biochemical Societies.

Comparative studies on parallel and antiparallel duplex and triplex DNA

Parallel strand models for base sequences d(A)(10). d(T)(10), d(AT)(5) . d(TA)(5), d(G(5)C(5)). d(C(5)G(5)), d(GC)(5) . d(CG)(5) and d(CTATAGGGAT). d(GATATCCCTA), where reverse Watson-Crick A-T pairing with two H-bonds and reverse Watson-Crick G-C pairing with one H-bond or with two H-bonds were adopted, and three models of d(T)(14). d(A)(14). d(T)(14) triple helix with different strand orientations were built up by molecular architecture and energy minimization. Comparisons of parallel duplex models with their corresponding B-DNA models and comparisons among the three triple helices showed: (i) conformational energies of parallel AT duplex models were a little lower, while for GC duplex models they were about 8% higher than that of their corresponding B-DNA models; (ii) the energy differences between parallel and B-type duplex models and among the three triple helices arose mainly from base stacking energies, especially for GC base pairing; (iii) the parallel duplexes with one H-bond G-C pairs were less stable than those with two H-bonds G-C pairs. The present paper includes a brief discussion about the effect of base stacking and base sequences on DNA conformations. (C) 1997 Academic Press Limited.

Development of polymorphic EST markers in Penaeus monodon: applications in penaeid genetics

The objective of this study was to develop type I markers for genome mapping and other genetic studies of Penaeus monodon. Primers were designed based on expressed sequence tags (ESTs) from a P monodon cephalothorax cDNA library to amplify 100-300 bp products. 34 of the primer pairs successfully amplified PCR products from genomic DNA. Single-strand conformation polymorphism analysis showed that similar to 30% of the ESTs tested exhibit polymorphism in a test panel of P monodon individuals. Mendelian inheritance of the EST-derived markers has been established in two international reference mapping families of P monodon, and mapping of these markers is in progress. Some ESTs were successfully amplified from other Penaeus species (P. chinensis, P japonicus and P vannamei), indicating that the markers are applicable in cross-species comparison. Two populations of P. japonicus could be differentiated using one of the ESTS. In conclusion, the polymorphic EST markers developed in this study are applicable in genome mapping and population genetic studies of penaeid shrimp. (C) 2002 Elsevier Science B.V. All rights reserved.

Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy

Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitting diodes based on ZnO heterojunctions, but little is known of the band offsets of SiO2/ZnO. In this letter, energy band alignment of SiO2/ZnO interface was determined by x-ray photoelectron spectroscopy. The valence band offset Delta E-V of SiO2/ZnO interface is determined to be 0.93 +/- 0.15 eV. According to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V Delta E-C=E-g(SiO2)-E-g(ZnO)-Delta E-V, and taking the room-temperature band-gaps of 9.0 and 3.37 eV for SiO2 and ZnO, respectively, a type-I band-energy alignment of SiO2/ZnO interface with a conduction band offset of 4.70 +/- 0.15 eV is found. The accurate determination of energy band alignment of SiO2/ZnO is helpful for designing of SiO2/ZnO hybrid devices and is also important for understanding their carrier transport properties. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3204028]

Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy

In2O3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47 +/- 0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49-0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices.

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.

Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect

The electronic structure of diluted magnetic semiconductor (DMS) superlattices under an in-plane magnetic field is studied within the framework of the effective-mass theory; the strain effect is also included in the calculation. The numerical results show that an increase of the in-plane magnetic field renders the DMS superlattice from the direct band-gap system to the indirect band-gap system, and spatially separates the electron and the hole by changing the type-I band alignment to a type-II band alignment. The optical transition probability changes from type I to type II and back to type I like at large magnetic field. This phenomenon arises from the interplay among the superlattice potential profile, the external magnetic field, and the sp-d exchange interaction between the carriers and the magnetic ions. The shear strain induces a strong coupling of the light- and heavy-hole states and a transition of the hole ground states from "light"-hole to "heavy"-hole-like states.

Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate

The photoluminescence (PL) spectra of self-assembled In0.55Al0.45As/Al0.45Ga0.5As quantum dots (QD) grown on (311)A GaAs substrate were measured. The type- I character of PL related to the X valley was verified by excitation power dependence of peak position and the PL spectra under different pressure , which was attributed to the type- II transition from X valley in Al0.5Ga0.5As to heavy holes in In0.55Al0.45As The high energy Gamma -related transition was also observed above 70K and assigned as the transition between Gamma valley and heavy holes in In-0.55 Al0.45As. The X-valley split was discussed to interpret the observed second X-related peak under pressure.

The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates

Strained InAs nanostructures have been grown by solid-source molecular beam epitaxy in In0.52Al0.48As matrix on different InP substrate surfaces ((0 0 1) and (1 1 n)A/B (n = 1 - 5)). The morphology of the nanostructures was characterized using atomic force microscopy (AFM). The AFM results reveal interesting differences in the size, shape, and alignment of the nanostructures between different oriented surfaces. It was found that some faceted nanostructures tend to form on A-type surfaces, the shape and the alignment of these nanostructures show clear dependence on the substrate orientation. Samples grown on (0 0 1) and B-type surfaces showed preferentially dense round dots. Dots formed on (1 1 3)B, (1 1 3)B and (1 1 5)B surfaces have a higher dot density and size homogeneity, which shows a potential for the production of high-quality and customized self-assembled quantum dots for photonics applications. (C) 2000 Elsevier Science B.V. All rights reserved.

PHOTOLUMINESCENCE STUDIES OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS UNDER HYDROSTATIC-PRESSURE

The photoluminescence from InxG1-xAs/GaAs strained quantum wells with thickness from 30 to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It was found that the pressure coefficients of the exciton peaks corresponding to transitions from the first conduction subband to the heavy-hole subband increased with reduced well width, in contrast to the case of GaAs/AlxGa1-xAs quantum wells. Calculations revealed that the increased barrier height with pressure was the major cause of the change in the pressure coefficients. Two peaks related to indirect transitions were observed at pressures higher than 50 kbar. They are attributed to type-I transitions from the lowest conduction-band edge, which are the strain splitted X(xy) valleys, to the heavy-hole subband in the InxGa1-xAs well.

Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs

We have measured low-temperature photoluminescence (PL) and optical absorption spectra of an In0.2Ga0.8As/GaAs multiple quantum well (MQW) structure at pressures up to 8 GPa. Below 4.9 GPa, PL shows only the emission of the n = 1 heavy-hole (HH) exciton. Three new X-related PL bands appear at higher pressures. They are assigned to spatially indirect (type-II) and direct (type-I) transitions from X(Z) states in GaAs and X(XY) valleys of InGaAs, respectively, to the HH subband of the wells. From the PL data we obtain a valence band offset of 80 meV for the strained In0.2Ga0.8As/GaAs MQW system. Absorption spectra show three features corresponding to direct exciton transitions in the quantum wells. In the pressure range of 4.5 to 5.5 GPa an additional pronounced feature is apparent in absorption, which is attributed to the pseudo-direct transition between a HH subband and the folded X(Z) states of the wells. This gives the first clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance at the heterointerfaces in MQWs.

High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells

We have measured low-temperature photoluminescence (PL) and absorption spectra of In0.2Ga0.8As/GaAs multiple quantum wells (MQW's) under hydrostatic pressures up to 8 GPa. In PL, only a single peak is observed below 4.9 GPa corresponding to the n = 1 heavy-hole (HH) exciton in the InxGa1-xAs wells. Above 4.9 GPa, new PL lines related to X-like conduction band states appear. They are assigned to the type-II transition from the X(Z) states in GaAs to the HH subband of the InxGa1-xAs wells and to the zero-phonon line and LO-phonon replica of the type-I transition involving the X(XY) valleys of the wells. In addition to absorption peaks corresponding to direct exciton transitions in the wells, a new strong absorption feature is apparent in spectra for pressures between 4.5 and 5.5 GPa. This absorption is attributed to the pseudodirect transition between the HH subband and the X, state of the wells. This gives clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance in MQW structures. From experimental level splittings we determine the valence band offset and the shear deformation potential for X states in the In0.2Ga0.8As layer.

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.

中药射干的化学成分研究

本学位论文由4章组成。第一章是论文的主体，报道了中药射干的化学成分研究。第二章是中药射干代用品川射干的化学成分研究，并附带报道了西番莲化学成分的研究结果。第三章是射干、川射干及西番莲提取物化学成分串联质谱分析的报道。第四章为综述，概述了射干及鸢尾属植物的化学成分和药理研究进展。 在第一和二章中分别报道了射干（Belamcanda chinensis (L.) DC.）、川射干 （Iris tectorum Maxim.）及西番莲（Passiflora incarnate L.）化学成分的分离纯化与结构鉴定。采用正、反相硅胶柱层析、凝胶柱层析、薄层制备及HPLC等各种分离方法，从三种药用植物中共分离出68个不同的化合物，其中61个的结构得 得以鉴定，另外4个化合物的结构正在鉴定中，3个由于量少且有点杂质未作进一步的鉴定。 中药射干（Rhizoma Belamcandae）为射干植物的干燥根茎，从中共分离出53个化合物，通过红外、质谱及核磁共振等波谱方法鉴定了包括12个新化合物在内的48个，结构类型分别属于iridal型三萜及其新颖的二聚体、异黄酮、黄酮及黄酮醇、香豆素、甾体、芳香酸和脂肪酸及其甘油酯等。新化合物中有两个异黄酮类化合物，其结构分别鉴定为5,7,8,4′-四羟基-6-甲氧基异黄酮和5,6-二羟基-4′-甲氧基异黄酮-7-O-β-D-吡喃葡萄糖苷；八个新的iridal型三萜化合物分别鉴定为鸢尾烯（L）、16-甲氧基鸢尾烯、16-去羟基鸢尾烯、2-(E)-16-去羟基鸢尾烯、16-去羟基鸢尾烯B、3-乙酰基-16-去羟基鸢尾烯、iristectoroneL和iristectoroneM；两个结构骨架新颖的双三萜，分别命名为射干素A和射干素B，其分离纯化的困难以及结构的新颖和复杂突显出该论文的科学意义。除这些新化合物外，还有9个已知化合物为首次从中药射干中分离得到。此外，从中药射干的代用品川射干中分离得到7个已知化合物，主要是黄酮类成分及iridal型三萜化合物，其中1个三萜化合物为从射干中分离鉴定的新成分。另外还从西番莲中分离出8个化合物，鉴定了其中的6个，主要为黄酮碳苷。 第三章是关于射干、川射干及西番莲提取物化学成分的ESI-MS-MS分析，在初步探讨了从这些植物中分离鉴定出的一些异黄酮及黄酮碳苷的质谱裂解规律基础上，通过质谱和串联质谱分析，定性和半定量地检测了射干和川射干中主要的异黄酮成分以及西番莲中的黄酮碳苷成分，为这些药材品质的快速鉴定提供了一种简便方法。 第四章概述了射干及鸢尾属药用植物的化学和药理研究进展，特别是对其中异黄酮及三萜类成分的研究进展进行了深入系统的综述。 This dissertation is composed by four chapters. The first and second chapter reports the phytochemical investigation of three medicine plants, Belamcanda chinensis (L.)DC., Iris tectorum Maxim. and Passiflora incarnate L. Sixty eight different compounds were isolated and sixty one of them were identified. The third chapter described rapid ESI-MS-MS analysis of B. chinensis, I. tectorum, and P. incarnate. The forth part is a review about the progress of studies on the chemical constituents from Belamcanda chinensis and Iris species. Fifty-three compounds were isolated from Rhizoma Belamcandae, the rhizomes of B. chinensis by the methods of column chromatography (normal and reversed phase silica gel, Sephadex LH-20), preparative TLC and HPLC. On the basis of spectroscopic methods including IR, ESI-MS, 1-D and 2-D NMR, forty eight of them were identified as seventeen flavonoids, seventeen tritepenoids, one cumarin, five steroids and some benzene derivative etc. Among them, the structures of twelve new compounds were elucidated as 6-methoxy-5,7,8,4′-tetrahydryoxyisoflavoe, 4′-methoxy-5,6-dihydroxyisoflavone-7-O-β-D-glucopyranoside, iristectorene L, 16-methoxyisoiridogermanal, 16-dehydroxyisoiridogermanal, 2-(E)-16-dehydroxy isoiridogermanal, 16-dehydroxyiristectorene B, 3-acetyl-16-dehydroxyisoiridoger- manal, iristectorone L, iristectorone M, belamcandene A and belamcandene B. Last two new compounds are dimer of triterpenoids with a novel carbon skeleton. Beside the new compounds, nine known ones were isolated from this plant for the first time. Isolation of I. tectorum yielded seven compounds. On the basis of spectroscopic methods including ESI-MS, NMR and the comparison with authentic samples, three of them were determined as isoflavone, two of them were triterpenoids, and other two were β-sitosterol and apocynin. All of them are known compounds except one of iridal type triterpenoid, 16-dehydroxyiristectorene B, which also obtained from B. chinensis as a new compound. Isolation of P. incarnate yielded eight compounds. Six of them were determined on the basis of spectroscopic methods including ESI-MS, NMR and the comparison with authentic samples. Four of them are flavone-C-gluconside, and two are steroids. The third chapter describes the tandem mass spectrometry (ESI-MS-MS) analysis of the isoflavonoids from B. chinensis and I. tectorum, as well as C-glycosyl-flavonoide from P. incarnate, in order to explore the rapid methodology of validating the quality of the herbs. In addition, the fractionation rules of some iosflavonoids and C-glycosyl-flavonoids were discussed. The fourth chapter summarizes the research development on chemistry and pharmacology of medicine plants of B.chinensis and Iris species.