Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells


Autoria(s): Jiang DS; Bian LF; Liang XG; Chang K; Sun BQ; Johnson S; Zhang YH
Data(s)

2004

Resumo

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/8000

http://www.irgrid.ac.cn/handle/1471x/63594

Idioma(s)

英语

Fonte

Jiang, DS; Bian, LF; Liang, XG; Chang, K; Sun, BQ; Johnson, S; Zhang, YH .Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells ,JOURNAL OF CRYSTAL GROWTH,AUG 1 2004,268 (3-4):336-341

Palavras-Chave #半导体物理 #molecular beam epitaxy
Tipo

期刊论文