149 resultados para 6 1 Writing Traits
Resumo:
The Ho:YAP crystal is grown by the Czochralski technique. The room-temperature polarized absorption spectra of Ho:YAP crystal was measured on a c-cut sample with 1 at% holmium. According to the obtained Judd-Ofelt intensity parameters Omega(2) = 1.42 x 10(-20) cm(2), Omega(4) = 2.92 x 10(-20) cm(2), and Omega(6) = 1.71 x 10(-20) cm(2), this paper calculated the fluorescence lifetime to be 6 ms for I-5(7) -> I-5(8) transition, and the integrated emission cross section to be 2.24 x 10(-18) cm(2). It investigates the room-temperature Ho:YAP laser end-pumped by a 1.91-mu m Tm:YLF laser. The maximum output power was 4.1 W when the incident 1.91-mu m pump power was 14.4W. The slope efficiency is 40.8%, corresponding to an optical-to-optical conversion efficiency of 28.4%. The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm.
Resumo:
66666666 14wt%66661.5wt%61100J/m47.3MPa S. WuCort Leibler , , ,dCort LeiblerCC PE-g-PB-g-PA6PA650-70nmPA610oC/minPEPA6PBPA6PEPE 6
Resumo:
12121212121212121212890DSC121212121212168.6[]~(1/2)8.5[/]~(1/2)108.7106.8S_ 0(1)(147.489.4)(2)Matsuo(3)(12)Flory-Huggins1,2121212121212Gibbs-DiMarzioTgTgNg=-KTgLn((Tg)/(1-Tg))(1)
Resumo:
1HIV HIVHIV AA1()A2(10-)A3(7-)HIVA1A3HIV-1HIV-2A2HIVA1C-10-OHHIVA1C-7-CH2OHC-20-CH3HIVA3A1HIVH9/HIV-1B Jurkat/HIV-1BH9/HIV-1BHIV-1A1A3HIV-1BH9JurkatA3 H9H9/HIV-1BJurkatJurkat/HIV-1BA3HIV-1BA3A1HIV BB120(S)-O - [-O-( 1'--2',2',6',6'--4'-)]-20-B220(S)-O - [-N-( 1'--2',2',6',6'--1',2',5',6'-)-4'-)]-20-)B1B2HIVB2HIV-1HIV-21HIV HIVHIV AA1()A2(10-)A3(7-)HIVA1A3HIV-1HIV-2A2HIVA1C-10-OHHIVA1C-7-CH2OHC-20-CH3HIVA3A1HIVH9/HIV-1B Jurkat/HIV-1BH9/HIV-1BHIV-1A1A3HIV-1BH9JurkatA3 H9H9/HIV-1BJurkatJurkat/HIV-1BA3HIV-1BA3A1HIV BB120(S)-O - [-O-( 1'--2',2',6',6'--4'-)]-20-B220(S)-O - [-N-( 1'--2',2',6',6'--1',2',5',6'-)-4'-)]-20-)B1B2HIVB2HIV-1HIV-2B1HIVB1C-4-CH2-NHC-3-CH3HIVB2HIVB2H9/HIV-1BH9/HIV-1BHIV-1HIV-1B2HIV-1BH9B2HIV 2HIV/AIDSHIV AIDS8HIVAIDSHIV/AIDS830AIDS40HIV708ELISA1(HSV-1)2(HSV-2)-(VZV)(CMV)PCREB(EBV)6(HHV-6)7(HHV-7)8(HHV-8)HIV/AIDSHSV-1HSV-2VZVCMVHHV-6HHV-8 AIDSVZVHIVAIDSHIV/AIDS HIVHIVHIV412HIV-1/2412HIV2.9%HIV(6.2%)(4.2%)(3.4%)(1.5%)(1.0%)83.3%HIVHIV1HIVHIVHIVHIVHIV
Resumo:
Si(0.6-1.5)at%CC~(29)Si~+Si_(1-x)C_xSi_(1-x)C_xCSi950CSi_(1-x)C_xCSi_(1-x)C_xC1050CC
Resumo:
Si(0.6-1.5)%CSi_(1-x)C_xSi_(1-x)C_xC0.6%850-950CSi_(1-x)C_xCCSi_(1-x)C_xC1.5%CSi_(1-x)C_xSi_(1-x)C_x
Resumo:
SiC0.6%1.0%Si_(1-x)C_xSi_(1-x)C_xSi850CSi_(1-x)C_xCSi_(1-x)C_xSi_(1-x)C_xCSi_(1-x)C_X9501000C
Resumo:
Si (0 6 1 5 )at%C ,C2 9Si+ ,Si1 -xCx ,Si1 -xCx .CSi , 95 0C ,Si1 -xCx , .C , ,Si1 -xCx ,C , . 10 5 0 , ,C ,C .
Resumo:
Si (0 6 1 5 ) %C ,Si1-xCx ,Si1-xCx .C 0 6 % , 85 0 95 0 ,C ,Si1-xCx .C ,CSi1-xCx ,C 1 5 % ,CSi1-xCx . ,Si1-xCx .
Resumo:
SiC0.6%~1.0%Si1?xCx, Si1?xCx. Si, 850, C, Si1?xCx. C, , Si1?xCx, , Si1?xCx, C. Si1?xCx, 950, 1 000, . C, .
Resumo:
By introducing tungsten oxide (WO3) doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine (NPB) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (OLEDs). The detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. The experimental results clearly demonstrated that using WO3 doped NPB as the hole injection layer in OLEDs not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. It could be seen that due to the utilization of WO3 doped NPB hole injection layer in NPB/tris (8-quinolinolato) aluminum (Alq(3))-based device, the maximum efficiency reached 6.1 cd A(-1) and 4.8 lm W-1, which were much higher than 4.5 cd A(-1) and 1.1 lm W-1 of NPB/Alq(3) device without hole injection layer. The device with WO3 doped NPB hole injection layer yet gave high efficiency of 6.1 cd A(-1) (2.9 lm W-1) even though the device was fabricated at substrate temperature of 80 degrees C.
