Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates

We show that part of the reflectance difference resonance near the E-0 energy of ZnSe is due to the anisotropic in-plane strain in the ZnSe thin films, as films grown on three distinctly different substrates, GaAs, GaP, and ZnS, all show the resonance at the same energy. Such anisotropic strain induced resonance is predicted and also observed near the E-1/E-1+Delta(1) energies in ZnSe grown on GaAs. The theory also predicts that there should be no resonance due to strain at, the E-0+Delta(0) energy, which is consistent with experiments. The strain anisotropy is rather independent of the ZnSe layer thickness, or whether the film is strain relaxed. For ZnSe films with large lattice mismatch with substrates, the resonance at the E-1/E-1+Delta(1) energies is absent, very likely due to the poor crystalline quality of the 20 nm or so surface layer. (C) 2000 American Vacuum Society. [S0734-211X(00)05604-3].

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain

The spin splitting in GaN-based heterostructures has been investigated by means of circular photogalvanic effect experiments under uniaxial strain. The ratios of Rashba and Dresselhaus spin-orbit coupling coefficients (R/D ratios) have been measured in AlxGa1-xN/GaN heterostructures with various Al compositions. It is found that the R/D ratio increases from 4.1 to 19.8 with the Al composition of the AlxGa1-xN barrier varied from 15% to 36%. The Dresselhaus coefficient of bulk GaN is experimentally obtained to be 0.4 eV angstrom(3). The results indicate that the spin splitting in GaN-based heterostructures can be modulated effectively by the polarization-induced electric fields.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode

Strain rate-dependent shear band behavior in bulk metallic glasses

In this article, we review our recent advances in understanding the deformation behavior of a typical tough Zr41.2Ti13.8Cu12.5Ni10Be22.5 (Vit 1) bulk metallic glass (BMG), as a model material, under various loading modes and strain rates, focusing particularly on the rate-dependence and formation mechanism of shear-banding. Dynamic and quasi-static mechanical experiments, including plate shear, shear punch and spherical indentation, and continuum as well as atomistic modeling on shear-banding are discussed. The results demonstrate that higher strain rate slows down the annihilation process of free volume, but promotes the free-volume coalescence, which is responsible for the rate-dependent shear banding. The physical origin of shear bands, that is the free volume softening underpinned by irreversible rearrangements of atoms, is unveiled. Finally, some concluding remarks are given.

Splitting the Fast and Slow Motions in Molecular Dynamics Simulations Based on the Change of Cold Potential Well Bottom

The atomic motion is coupled by the fast and slow components due to the high frequency vibration of atoms and the low frequency deformation of atomic lattice, respectively. A two-step approximate method was presented to determine the atomic slow motion. The first step is based on the change of the location of the cold potential well bottom and the second step is based on the average of the appropriate slow velocities of the surrounding atoms. The simple tensions of one-dimensional atoms and two-dimensional atoms were performed with the full molecular dynamics simulations. The conjugate gradient method was employed to determine the corresponding location of cold potential well bottom. Results show that our two-step approximate method is appropriate to determine the atomic slow motion under the low strain rate loading. This splitting method may be helpful to develop more efficient molecular modeling methods and simulations pertinent to realistic loading conditions of materials.

Fiber Bragg Grating Sensor for Strain Sensing in Low Temperature Superconducting Magnet

Fiber Bragg grating (FBG) sensor for monitoring the electromagnetic strain in a low temperature superconducting (LTS) magnet was studied. Before used to LTS magnet strain sensing, the strain response of the sensor with 1.54-mu m wavelength at liquid helium was experimentally studied. It was found that the wavelength shift showed good linearity with longitudinal applied loads and the strain sensitivity is constant at 4.2 K. And then, the hoop strain measurement of a LTS magnet was carried out on the basis of measured results. Furthermore, the finite element method (FEM) was used to simulate the magnet strain. The difference between the experimental and numerical analysis results is very small.

Fiber Bragg Grating Sensor for Strain Sensing in Low Temperature Superconducting Magnet

Fiber Bragg grating (FBG) sensor for monitoring the electromagnetic strain in a low temperature superconducting (LTS) magnet was studied. Before used to LTS magnet strain sensing, the strain response of the sensor with 1.54-mu m wavelength at liquid helium was experimentally studied. It was found that the wavelength shift showed good linearity with longitudinal applied loads and the strain sensitivity is constant at 4.2 K. And then, the hoop strain measurement of a LTS magnet was carried out on the basis of measured results. Furthermore, the finite element method (FEM) was used to simulate the magnet strain. The difference between the experimental and numerical analysis results is very small.

delta C-13 variation of C-3 and C-4 plants across an Asian monsoon rainfall gradient in arid northwestern China

IEECAS SKLLQG

重离子诱变技术选育碱性蛋白酶高产菌株；The Selection for High-yield Alkaline Protease Producing Strain by Heavy-ion Irradiation

从采集的土壤样品中分离筛选出一株碱性蛋白酶产生菌G-41,经16S rRNA分子鉴定为芽孢杆菌属菌株。该菌株在发酵培养基中能产生较高产量的胞外碱性蛋白酶(1.7×104U/mL)。以G-41为出发菌株,对其进行重离子辐照诱变处理,获得突变株G-41-68,将该突变株再次经重离子诱变,从大量突变株中筛选出碱性蛋白酶高产菌株15Gy-54,其酶活力达到6.22×104U/mL。与出发菌株相比较,突变株G-41-68和15Gy-54的酶活力分别提高了1.58倍和2.65倍。对突变株15Gy-54的发酵条件进行了优化研究,结果表明,该菌株的碱性蛋白酶活力得到进一步提高,达到7.18×104U/mL,其最适发酵条件为:培养基(g/100mL)为胰蛋白胨1、酵母膏0.5、乳糖5、Na2HPO4·12H2O0.4、KH2PO40.03、Na2CO30.1、MgSO40.0481(4×10-3mol/L)、pH8.0,培养温度41℃,振荡培养时间42-48h。实验结果表明,重离子辐照诱变技术是一种非常有效的微生物诱变育种新技术。

Inactive and mutagenic effects induced by carbon beams of different LET values in a red yeast strain

To evaluate biological action of microorganism exposed to charged particles during the long distance space exploration. Induction of inactivation and mutation in a red yeast strain Rhodotorula glutinis AY 91015 by carbon beams of different LET values (14.9-120 0 keV mu m(-1)) was investigated It was found that survival curves were exponential, and mutation curves were linear for all LET values The dependence of inactivation cross section on LET approached saturation near 120 0 keV mu m(-1) The imitation cross section saturated when LET was higher than 582 keV mu m(-1) Meanwhile, the highest RBEI for inactivation located at 120 0 key mu m(-1) and the highest RBEm for mutation was at 58.2 key mu m(-1) The experiments imply that the most efficient mutagenic part of the depth dose profile of carbon ion is at the plateau region with intermediate LET value in which energy deposited is high enough to Induce mutagenic lesions but too low to induce over kill effect in the yeast cells (C) 2010 Elsevier B V All rights reserved

80 MeV/u C-12离子诱变选育PHB高产菌株；A strain of high PHB output by mutagenesis of 80 MeV/u C-12 ions

用80MeV/u12C6+离子对一株积累聚β-羟基丁酸酯(PHB)的芽孢杆菌(BacillusP-9)进行诱变选育,最终获得PHB高产株菌G15,其PHB产量达2.93g/L,与出发菌株相比较,PHB积累量提高了1.5倍。研究结果表明,本试验辐照最佳剂量为15Gy。重离子辐照诱变育种效果显著,具有广阔的发展应用前景。