Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model

Applying the model dielectric function method, we have expressed the absorption coefficient of GaSb analytically at room temperature relating to the contribution of various critical points of its electronic band structure. The calculated absorption spectrum shows good agreement with the reported experimental data obtained by spectral ellipsometry on nominally undoped sample. Based on this analytical absorption spectrum, we have qualitatively evaluated the response of active absorbing layer structure and its photoelectric conversion properties of GaSb thermophotovoltaic device on the perturbation of external thermal radiation induced by the varying radiator temperature or emissivity. Our calculation has demonstrated that desirable thickness to achieve the maximum conversion efficiency should be decreased with the increment of radiator temperature and the performance degradation brought by any structure deviation from its optimal one would be stronger meanwhile. For the popular radiator temperature, no more than 1500 K in a real solar thermophotovoltaic system, and typical doping profile in GaSb cell, a reasonable absorbing layer structure parameter should be controlled within 100-300 nm for the emitter while 3000-5000 nm for the base.

Optical responses of ZnSe quantum dots in silica gel glasses

The characteristic features of the absorption and photoluminescence spectra of ZnSe quantum dots (QDs) inside a silica matrix derived from a sol-gel method were studied at room temperature. Compared with the bulk materials, the absorption edges of ZnSe QDs in silica gel glass were shifted to higher energies and the spectra exhibited the discrete excitonic features due to the quantum confinement effects. Besides the band-edge emission, photoluminescence at ultraviolet excitation also showed the emissions related to the higher excitonic states. (C) 2004 Elsevier B.V. All rights reserved.

Optical and structural properties of self-assembled ZnO QD chains by L-MBE

ZnO complex 3D nano-structures have been self-organized on Al2O3 (0 0 0 1) substrate by laser molecular beam epitaxy (L-MBE). It is shown by AFM morphology that the structure is composed of ID quantum dot chains (QDCs) and larger nano-islands at the nodes of QDCs. The formation mechanism of the nano-structure is also investigated. XRD results indicate that the nano-structure is highly c-axis oriented, with the aligned in-plane oriented domains. Time-integrated photoluminescence (TIPL) of the sample shows obvious blue-shift and broadening of the near band-edge (NBE) emission at room temperature, which are related to the quantum confinement effects. Time-resolved PL (TRPL) result shows bi-exponential decay behavior of ZnO QDCs, with a fast decay time of 38.21 ps and a low decay time of 138.19ps, respectively, which is considered to be originated from the interdot coupling made by coherent emission and reabsorption of the photons in QDCs. (C) 2007 Elsevier B.V. All rights reserved.

Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

Low pressure metalorganic chemical vapour deposition (LP-MOCVD) growth and characteristics of InAssb on (100) Gasb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17 mu m in wavelength. The surface of InAssb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAssb film shows to be of n-type conduction with an electron concentration of 8.52 x 10(16) cm(-3).

钙钛矿型有机－无机杂化半导体材料的合成及其发光性质的研究

有机-无机钙钛矿型杂化半导体材料结合了有机和无机材料优点，并在分子水平上自组装形成复合材料，具有独特的光、电、磁等性质，在许多领域具有潜在的应用。基于第四主族金属卤化物的杂化钙钛矿是本论文研究的主题，这一类杂化钙钛矿材料是一类独特的半导体材料，其光功能引起人们越来越多的重视。 为此，本论文通过选择不同的有机阳离子配体制备了新型的基于卤化铅的有机－无机杂化钙钛矿结构单晶材料和薄膜，对它们的发光性质进行了研究。利用N-(3-胺基丙基)咪唑和溴化铅在氢溴酸溶液中反应得到了罕见的(110)取向杂化钙钛矿(C6H13N3)2PbBr4 (monoclinic, P21/c)。所得到的杂化钙钛矿在吸收(392 nm)及发射(424 nm)光谱中均存在激子的特征峰。同时，由于N-(3-胺基丙基)咪唑的光活性，得到的杂化材料具有独特的发光性质，在无机层与有机层之间发生了能量传递，使得有机配体的峰位发生红移并且发光强度明显增加。利用CASTEP (Cambridge Serial Total Energy Package) 总能计算软件包对配合物及配体的能带结构进行了计算。结果证明了配体在杂化材料中发光的红移及激子与配体间的能量传递。另外，还发现了一个有机配体2-(2-氨基乙基)硫脲也能够与金属卤化物络合形成(110)取向的有机－无机杂化钙钛矿结构C3H11SN3PbBr4(monoclinic P21/c)，由于有机配体的不同，2-(2-氨基乙基)硫脲构筑的(110)取向杂化钙钛矿结构较N-(3-胺基丙基)咪唑构筑的(110)取向杂化钙钛矿结构有较大程度的扭曲变形，使得它们的发光性质有所不同。 邻-(胺基甲基)吡啶，间-(胺基甲基)吡啶，对-(胺基甲基)吡啶在相同条件下与溴化铅组装，得到0-D [(m-C6H10N2)2PbBr6] (orthorhombic, Pbca), 1-D [(o-C6H10N2)PbBr4] (monoclinic, P21/c), 2-D [p-(C6H10N2)PbBr4] (orthorhombic, Pbca) 等不同维数的溴化铅骨架。其中间-(胺基甲基)吡啶与溴化铅在酸性条件下形成稀有的0-D杂化钙钛矿；邻-(胺基甲基)吡啶在相同条件下形成2-D层状杂化钙钛矿；对-(胺基甲基)吡啶则得到共边八面体组成的一维链。证实了有机配体氢键和空间位阻对无机结构的形成起限制作用。得到的杂化钙钛矿化合物的无机层激子特征吸收峰分别位于428 nm(0-D)和431 nm(1-D)，无机层激子特征发射峰位于461 nm (0-D)和467 nm(1-D)。 由于甲基咪盐的特殊胺盐构型，我们选用甲基咪盐取代的吡啶作为有机阳离子配体来构筑基于溴化铅的杂化钙钛矿，分别为3-甲咪基吡啶和4-甲咪基吡啶。3-甲咪基吡啶与溴化铅在酸性条件下构筑未见文献报道的即共点又共边的Pb-Br八面体连成无机层网络的杂化结构(C6H13N3)PbBr4 (monoclinic, C2/c)。4-甲咪基吡啶与溴化铅在相同条件下构筑的是常见的(100)取向的杂化钙钛矿结构(C6H13N3)PbBr4(orthorhombic, Pbca)。通过两个不同的化合物在结构和光学性质上的对比，表明有机阳离子配体对无机层结构以及杂化钙钛矿材料光学性质的影响。 在氢溴酸溶液中，组胺与卤化铅自组装成(100)取向杂化钙钛矿(C5H10N3)PbBr4 (monoclinic, P21/c)，(C5H10N3)PbCl4 (monoclinic, P21/c)。得到由扭曲的共角八面体组成的钙钛矿片层。受有机配体空间位阻及氢键的影响，无机层发生一定的扭曲，从而导致激子吸收较(分别位于419 nm，339 nm)线形脂肪胺有一定程度的红移。荧光光谱中存在基于溴化铅，氯化铅杂化钙钛矿激子的特征发射峰。另外作为比较，另一个复杂的有机胺3-氨基-1,2,4-三唑，在同样的条件下与PbBr2进行组装得到的是无机组分为一曲折的链状一维结构的杂化结构(C2H2N4)PbBr3 (orthorhombic, Pna21)。 线形的二咪唑配体2,2΄-(二咪唑基-甲基)苯和4,4΄-(二咪唑基-甲基)对联苯，由于其空间位阻与氢键的影响，与卤化铅的组装得到链状骨架。2,2΄-(二咪唑基-甲基)苯与氯化铅构筑的无机骨架是由共边铅氯三角锥连成的一维链状结构(C7H8N2)PbCl3 (triclinic, P-1)；与溴化铅形成类似交替排布的层状结构(C7H8N2)PbBr3 (triclinic, P-1)。4,4΄-(二咪唑基-甲基)对联苯构筑的氯化铅骨架为新奇的由共点的铅氯四方锥组成的类隧道形链(C20H21N4)Pb2Cl6•H2O (triclinic, P-1)；构筑的溴化铅骨架为由共边的铅溴八面体组成的双链(C20H21N4)Pb2Br6 (monoclinic, C2/c)。形成配合物的发光为配体本身的π-π*跃迁发光。 所合成的杂化钙钛矿材料都具有较好的成膜性，利用简单的旋涂法即可得到质量较好的薄膜材料，有利于对其进行光电研究。

Density Gradient Ultracentrifugation of Nanotubes: Interplay of Bundling and Surfactants Encapsulation

Density gradient ultracentrifugation (DGU) has emerged as a promising tool to prepare chirality enriched nanotube samples. Here, we assess the performance of different surfactants for DGU. Bile salts (e.g., sodium cholate (SC), sodium deoxycholate (SDC), and sodium taurodeoxycholate (TDC)) are more effective in individualizing Single Wall Carbon Nanotubes (SWNTs) compared to linear chain surfactants (e.g., sodium dodecylbenzene sulfonate (SDBS) and sodium dodecylsulfate (SDS)) and better suited for DGU. Using SC, a narrower diameter distribution (0.69-0.81 nm) is achieved through a single DGU step on CoMoCAT tubes, when compared to SDC and TDC (0.69-0.89 nm). No selectivity is obtained using SDBS. due to its ineffectiveness in debundling. We assign the reduce selectivity of dihydroxy bile salts (S DC and TDC) in comparison with trihydroxy SC to the formation of secondary micelles. This is determined by the number and position of hydroxyl ( OH) groups on the a-side of the steroid backbone. We also enrich CoMoCAT SWNT in the 0.84-0.92 nm range using the Pluronic F98 triblock copolymer. Mixtures of bile salts (SC) and linear chain surfactants (SOS) are used to enrich metallic and semiconducting laser-ablation grown SWNTs. We demonstrate enrichment of a single chirality, (6,5), combining diameter and metallic versus semiconductillg separation on CoMoCAT samples.

THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS

The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear terms describing the recombination of the nonequilibrium free electrons and holes into the calculation. Though some photoquenching such as photocapacitance, infrared absorption, and electron-paramagnetic-resonance quenching can be explained qualitatively by only considering the internal transfer between the EL2 state and its metastability, it is essential to take the recombination into consideration for a clear understanding of the photoquenching process. The numerical results and approximate analytical approach are presented in this paper for the first time to our knowledge. The calculation gives quite a reasonable explanation for n-type semiconducting GaAs to have infrared absorption quenching while lacking photoconductance quenching. Also, the calculation results have allowed us to interpret the enhanced photoconductance phenomenon following the conductance quenching in typical semi-insulating GaAs and have shown the expected thermal recovery temperature of about 120 K. The numerical results are in agreement with the reported experiments and have diminished some ambiguities in previous works.

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE

GaSb layers are grown on GaSb substrates; the effects of input partial pressure of trimethylantimony and the V/III ratio are studied. A model of the MOVPE phase diagram for the growth of GaSb and GaAsxSb1-x is developed which assumes thermodynamic equilibrium to be established at the solid-vapor interface.

INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA-X deformation-potential constants (IVDP's) have been calculated by use of a first-principles pseudopotential method for the III-V zinc-blende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb. When the calculated IVDP's of LA phonons for GaP, InP, and InAs and of LO phonons for AlAs, AlSb, GaAs, GaSb, and InSb are compared with results of a previous calculation that used the empirical pseudopotential method (EPM) and a rigid-ion approximation, good agreement is found. However, our ab initio pseudopotential results on IVDP's of LA phonons for AlAs, AlSb, GaAs, GaSb, and InSb and of LO phonons for GaP, InP, and InAs are about one order of magnitude smaller than those obtained by use of EPM calculations, indicating that the electron redistribution accompanying crystal-lattice deformation has a significant effect on GAMMA-X intervalley scattering for these phonon modes when the anions are being displaced. In our calculations the LA- and LO-phonon modes at the X point have been evaluated in the frozen-phonon approximation. We have also obtained the LAX- and LOX-phonon frequencies for these materials from total-energy calculations, which agree very well with experimental values for these semiconductors. We have also calculated GAMMA-X hole-phonon scattering matrix elements for the top valence bands in these nine semiconductors, from which the GAMMA-X IVDP's of the top valence bands for the longitudinal phonons and transverse phonons are evaluated, respectively.

1ST PRINCIPLES PSEUDOPOTENTIAL CALCULATIONS OF ZONE BOUNDARY PHONON FREQUENCIES OF III-V-ZINCBLENDE SEMICONDUCTORS

Longitudinal zone boundary X phonon frequencies have been calculated by a first principles pseudopotential method for III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. The phonon frequencies have been evaluated from total energy calculations in the frozen phonon approximation. The calculated phonon frequencies agree very well with the experimental values.

Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy

Films of GaN have been grown using a modified MBE technique in which the active nitrogen is supplied from an RF plasma source. Wurtzite films grown on (001) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure, the (0001) planes of the layers being parallel to the (001) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (111) oriented GaAs and GaP substrates. The improved structural properties of such films, assessed using X-ray and TEM method, correlate with better low-temperature FL.

Aggregation and precipitation in high dose as ion implanted Ge0.5Si0.5 alloy

Thermally stimulated redistribution and precipitation of excess arsenic in Ge0.5Si0.5 alloy has been studied by X-ray photoelectron spectroscopy (XPS), cross sectional transmission electron microscopy (XTEM) and X-ray energy disperse spectrometry (EDS). Samples were prepared by the implantation of 6 X 10(6) As+ cm(-2) and 100 keV with subsequent thermal processing at 800 degrees C and 1000 degrees C for 1 h. The XPS depth profiles from the implanted samples before and after the thermal annealing indicate that there is marked redistribution of the elements in heavily arsenic-implanted Ge0.5Si0.5 alloys during the annealing, including: (1) diffusion of As from the implanted region to the surface; (2) aggregation of Ge in the vicinity of the surface. A high density of precipitates was observed near the surface which were by XTEM and EDS identified as an arsenide. It is suggested that most of the implanted As in Ge0.5Si0.5 alloy exists in the form of GeAs.

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc-blende GaN/Ga0.85Al0.15N strained quantum well (100 Angstrom well width) have been investigated using a 6 X 6 Hamiltonian model including the heavy hole, Light hole, and spin-orbit split-off bands. At the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin-orbit split-off hole. Optical transitions between the valence subbands and the conduction subbands obey the Delta n=0 selection rule. At the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. The optical transitions do not obey the Delta n=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 10(19) cm(-3), there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5 X 10(18) cm(-3), which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J(rad) is 0.53 kA/cm(2) for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors. (C) 1996 American Institute of Physics.

Electronic structures of the zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wells

The electronic structures of the zinc-blende GaN/Ga0.85Al0.15N compressively strained superlattices and quantum wells are investigated using a 6 x 6 Hamiltonian model (including the heavy hole, light hole and spin-orbit splitting band). The energy bands, wavefunctions and optical transition matrix elements are calculated. It is found that the light hole couples with the spin-orbit splitting state even at the k=0 point, resulting in the hybrid states. The heavy hole remains a pure heavy hole state at k=0. The optical transitions from the hybrid valence states to the conduction states are determined by the transitions of the light hole and spin-orbit splitting states to the conduction states. The transitions from the heavy hole, light hole and spin-orbit splitting states to the conduction states obey the selection rule Delta n=0. The band structures obtained in this work will be valuable in designing GaN/GaAlN based optoelectronic devices. (C) 1996 Academic Press Limited