利用等效层的消偏振宽带减反膜设计

分析了倾斜入射条件下导致光学薄膜产生偏振的原因, 针对不同偏振态的等效导纳与等效相位进行了分析, 并计算了对称膜层在45°入射条件下不同偏振态的等效折射率与等效相位厚度, 采用等效层方法设计了光学性能良好的600～900 nm波段消偏振宽带减反膜。最后利用电子束蒸发技术制备了薄膜样品, 样品的光谱性能完全能够满足使用要求。其中在600～900 nm波段范围内, 平均反射率均小于1.38%, 反射率的偏振度均低于0.89％。另外, 通过对其理论及实验光学性能、角度敏感性、膜层厚度误差敏感性等方面的分析结果可

Y_2O_3稳定ZrO_2薄膜的结构和光学特性

用电子束蒸发法制备出四种不同Y2O3含量的Y2O3稳定ZrO2（YSZ）薄膜,用X射线衍射和透射光谱测定薄膜的结构和光学性能.结果表明：随着Y2O3含量的增加,ZrO2薄膜从单斜相向高温相（四方相和立方相）转变,获得了结构稳定的YSZ薄膜;YSZ薄膜的晶粒尺寸都比ZrO2薄膜的大,但随着Y2O3加入量的增加,晶粒尺寸有减小的趋势,薄膜表面也趋向光滑平整.所有YSZ薄膜的透射谱线都与ZrO2薄膜相似,在可见光和红外光区都有较高的透过率.Y2O3的加入还可以改变薄膜的折射率,在一定范围内可得到所需的任意折射率

两种后处理方法对HfO2薄膜性能的影响

利用电子束蒸发和光电极值监控技术制备了氧化铪薄膜，并分别用两种后处理方法（空气中退火和氧等离子体轰击）对样品进行了处理．然后，对样品的透过率、吸收和抗激光损伤阈值进行了测试分析．实验结果表明，两种后处理方法都能不同程度地降低了氧化铪薄膜的吸收损耗、提高了抗激光损伤阈值．实验结果还表明，氧等离子体轰击的后处理效果明显优于热退火，样品的吸收平均值在氧等离子体后处理前后分别为34．8ppm和9．0ppm，而基频（1 064nm）激光损伤阈值分别为10．0J／cm^2和21．4J／cm^2．

基底对光学薄膜弱吸收测量的影响

对表面热透镜技术测量光学薄膜弱吸收低频调制时不同基底对测量的影响进行了理论分析。用Lambda-900分光光度计测量了K9和石英基底的Ti3O5单层膜的吸收值，将该组样品作为定标片；用表面热透镜装置分别测量了BK7和石英空白基底及HfO2，ZnO两组不同基底不同厚度单层膜样品的吸收。通过分析比较同一工艺条件下镀制的不同基底薄膜样品用与其同种和不同种基底定标片定标测量的结果，表明在低频测量时需要用与测量样品同种基底的定标片定标；不同厚度样品的测量结果表明，在不能严格满足热薄条件时，测量结果需引入修正值。

离子束辅助反应制备的氧化铪薄膜特性

采用电子束直接蒸发氧化铪、无辅助电子束反应蒸发和离子束辅助反应蒸发金属铪3种沉积方式制备了单层HfO2薄膜,对样品的光学性能、结构特性以及激光损伤特性进行了研究。实验结果表明:通过反应沉积的方法可以有效减少缺陷产生并改善均匀性,施加离子辅助可以提高薄膜的折射率,在一定条件下还可以有效地降低吸收,但激光损伤阈值仍未达到直接采用氧化铪制备的水平;晶体结构方面,离子辅助条件下可以获得单斜相氧化铪薄膜,并且随着轰击能量的提高由(002)面的择优取向向(-111)面转变。

真空室内金属杂质污染对光学薄膜性能的影响

真空室内金属粒子污染是降低激光薄膜性能的一个重要因素。采用高真空残余气体分析仪,对薄膜沉积过程中的气氛进行分析。发现由黄铜制作的加热灯架在工作时会分解出Zn,在这种条件下沉积薄膜,会使薄膜中掺入金属杂质,导致薄膜激光破坏阈值降低。采用表面分析技术对薄膜的组分进行分析,证实薄膜中锌杂质的存在。激光破坏实验证明,含有锌杂质的薄膜的破坏阈值明显降低。

Influence of oxygen plasma treatment on properties of ZrO2 films prepared by e-beam evaporation techniques

Zirconia films were prepared by e-beam evaporation, and oxygen plasma treatment was used to modify film properties. Spectrophotometry, x-ray diffractometry (XRD), and atomic force microscopy were used to characterize refractive index, extinction coefficient, rnicrostructure, and surface roughness, respectively. The experimental results indicate that both refractive index and extinction coefficient of the films were reduced slightly after oxygen plasma treatment, with the decrease of intrinsic stress and surface roughness. From XRD spectra, the intensity decrease of the T(110) diffraction peak was clearly observed after the treatment, which was caused by the restructuring of the film atoms. (C) 2008 Elsevier Ltd. All rights reserved.

倾斜沉积制备雕塑薄膜的研究进展

倾斜沉积是一种新型的薄膜沉积技术。通过制备过程中基片的旋转和倾斜,可以制备出斜柱状、之字形、螺旋状、S形以及C形等各种形状的雕塑薄膜。雕塑薄膜可以实现许多传统薄膜无法实现的光学性质,为光学薄膜的设计与制备开辟了新的途径。本文综述了雕塑薄膜的制备方法,分析了雕塑薄膜的结构特征及影响因素,并阐述了其在光学领域的广泛应用前景。

SiO_2薄膜折射率的准确拟合分析

精确的光学常数对于设计和制备高品质的光学薄膜非常重要,尤其是那些光学性能对折射率变化敏感的薄膜。SiO_2是一种常用的低折射率材料,因与常用基底折射率相近使其准确拟合有一定难度。实验通过离子束溅射制备了SiO_2单层膜。考虑测量时的误差和基底折射率的影响,采用透射率包络和反射率包络得到了SiO_2的折射率,并用所得折射率进行反演来对这两种途径在实际测量拟合过程中的准确性进行比对。分析表明,剩余反射率在实际的测量过程中误差更小,直接用测量镀膜前后基片的剩余反射率值可以更简便更准确地得到SiO_2的折射率,能达到10~(-2)的精度。

Mechanism initiated by nanoabsorber for UV nanosecond-pulse-driven damage of dielectric coatings

A model of plasma formation induced by UV nanosecond pulselaser interaction with SiO2 thin film based on nanoabsorber is proposed. The model considers the temperature dependence of band gap. The numerical results show that during the process of nanosecond pulsed-laser interaction with SiO2 thin film, foreign inclusion which absorbs a fraction of incident radiation heats the surrounding host material through heat conduction causing the decrease of the band gap and consequently, the transformation of the initial transparent matrix into an absorptive medium around the inclusion, thus facilitates optical damage. Qualitative comparison with experiments is also provided. (C) 2008 Optical Society of America.

吸收杂质热辐射诱导光学薄膜破坏的热力机制

光学元件的破坏是限制高功率激光系统发展的主要问题,理解光学元件的破坏机制对于高功率激光系统的设计、运行参量选择以及器件技术发展有重要影响。以热辐射模型为基础研究了杂质吸收诱导光学薄膜破坏的热力过程。研究发现薄膜发生初始破坏所需时间很短,脉冲的大部分时间是引起薄膜发生更大的破坏。在考虑吸收杂质发生相变的情况下,计算了吸收杂质汽化对薄膜产生的蒸汽压力,论证了薄膜发生宏观破坏的可能性。此模型能很好地解释光学薄膜的平底坑破坏形貌。

Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer

We have investigated the optical properties of thick InGaN film grown on GaN by cathodeluminescence (CL) spectroscopy. It is found that there is obvious In composition variation in both growth and lateral direction of InGaN film. The depth distribution of In composition is closely related to the strain relaxation process of InGaN film. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and the CL peak energy shifts towards red. Moreover, a rather apparent In composition fluctuation is found in the relaxed upper part of InGaN layer as confirmed by CL imaging.

Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition

ZnO thin films were prepared by pulsed laser deposition (PLD) on glass substrates with growth temperature from room temperature (RT) to 500 degrees C. The effects of substrate temperature on the structural and optical properties of ZnO films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra, and RT photoluminescence (PL) measurements. The results showed that crystalline and (0 0 2)-oriented ZnO films were obtained at all substrate temperatures. As the substrate temperature increased from RT to 500 degrees C, the ratio of grain size in height direction to that in the lateral direction gradually decreased. The same grain size in two directions was obtained at 200 degrees C, and the size was smallest in all samples, which may result in maximum E, and E-0 of the films. UV emission was observed only in the films grown at 200 degrees C, which is probably because the stoichiometry of ZnO films was improved at a suitable substrate temperature. It was suggested that the UV emission might be related to the stoichiometry in the ZnO film rather than the grain size of the thin film. (c) 2007 Elsevier Ltd. All rights reserved.

Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films

The mechanical properties and fracture behavior of silicon nitride (SiNx) thin film fabricated by plasma-enhanced chemical vapor deposition is reported. Plane-strain moduli, prestresses, and fracture strengths of silicon nitride thin film; deposited both oil a bare Si substrate and oil a thermally oxidized Si substrate were extracted using bulge testing combined with a refined load-deflection model of long rectangular membranes. The plane-strain modu i and prestresses of SiNx thin films have little dependence on the substrates, that is, for the bare Si substrate, they are 133 +/- 19 GPa and 178 +/- 22 MPa, respectively, while for the thermally oxidized substrate, they are 140 +/- 26 Gila and 194 +/- 34 MPa, respectively. However, the fracture strength values of SiNx films grown on the two substrates are quite different, i.e., 1.53 +/- 0.33 Gila and 3.08 +/- 0.79 GPa for the bare Si substrate a A the oxidized Si substrate, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over the edge, Surface, and volume of the specimens and fitted with the Weibull distribution function. For SiNx thin film produced oil the bare Si Substrate, the Volume integration gave a significantly better agreement between data and model, implying that the volume flaws re the dominant fracture origin. For SiNx thin film grown on the oxidized Si substrate, the fit quality of surface and edge integration was significantly better than the Volume integration, and the dominant surface and edge flaws could be caused by buffered HF attacking the SiNx layer during SiO2 removal. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.