Magnetic properties and rectifying behaviour of silicon doped with gadolinium

The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.

Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate

A CeO2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an Si(111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric CeO2 was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO2.

一种低活化铁素体/ 马氏体钢的高能重离子辐照效应研究

Low-activation Ferritic/Martensitic steels are a kind of important structural materials candidate to the application in advanced nuclear energy systems.Possible degradation of properties and even failure in the condition of high-temperature and high helium production due to energetic neutron irradiation in a fusion reactor is a major concern with the application of this kind of materials.In the present work microstructural evolution in a 9Cr Ferritic/Martensitic steel(T92B) irradiated with 122 MeV 20Ne ions...中文摘要：低活化的铁素体/马氏体钢是先进核能装置(如聚变堆)的重要候选结构材料。在聚变堆实际工作环境下,由于高温和高氦产生率引起的材料失效是这类材料面临的一个重要问题。本项研究以兰州重离子加速器(HIRFL)提供的中能惰性气体离子束(20Ne,122 MeV)作为模拟辐照条件,借助透射电子显微镜,研究了一种低活化的9Cr铁素体/马氏体钢(T92B)组织结构的变化和辐照肿胀。实验结果表明,高温下当材料中晶格原子的撞出损伤和惰性气体原子沉积浓度超过一定限值时,材料内部形成高浓度的空洞,并且空洞肿胀率显著依赖于辐照温度和剂量;在马氏体板条界面及其它晶界处空洞趋于优先形成,并且在晶界交汇处呈加速生长。基于氦泡的形核生长与空洞肿胀的经典模型探讨了在不同辐照条件(He离子、Ne离子、Fe/He离子双束、快中子、Ni离子)下铁素体/马氏体钢中肿胀率数据的关联。

重离子辐照SiO_2 的光致发光(英文)

基于荷能离子与固体相互作用特点 ,提出了一种新的制备光致发光材料的方法——高能重离子辐照 .用这种方法研究了 Si O2 薄膜的光致发光特性 ,发现高能 84 Kr和 4 0 Ar离子辐照可在注碳Si O2 薄膜样品中产生强的蓝 -紫光发射带 ,掺杂碳增强了辐照样品的发光特性

重离子辐照甜高粱新品种选育及其诱变机理研究

利用重离子辐照技术对甜高粱种子进行不同剂量的诱变处理，并分析辐照后代的农艺性状、生理生化特性及基因组DNA的多态性差异，旨在选育出含糖量高、生物量高及抗逆性强的新品种，为发展生物质燃料乙醇产业提供优质的原料，并阐明重离子对甜高粱的诱变机理。主要结果如下： 1.甜高粱在田间的存活曲线表现为“类马鞍型”，随着辐照剂量的增加，其存活率先降后升再下降。 2.筛选出株高、单秆重、糖锤度、早熟型、茎粗等突变类型的材料，尤其是80Gy辐照剂量下从BJ0602中得到的早熟突变材料KFJT-1，生育期缩短了20天左右。 3.和未辐照株KFJT-CK相比，辐照突变株KFJT-1的萌芽指标表现为极显著差异（p＜0.01），其发芽势、发芽指数、活力指数和子叶长度、胚根鲜重及子叶鲜重分别下降了24％、12.69％、0.8108％和15.32％、76.27％、27.08％。 4. 利用RAPD技术对不同剂量的辐照处理检测出的多态性差异表明，不同剂量的碳离子束辐照后，不同辐照剂量对应的5种处理材料的DNA突变率分别0％、11.4％、12.2％、18.7％和17.7％。 重离子辐照可引起甜高粱各个方向的突变，有些突变材料生物量和含糖量均高，而有些突变材料表现出生长点消失、叶片扭曲、黄化等表型性状

深层治癌重离子束的配送

在辐射治疗应用方面，相比传统体外辐射疗法，高能量的重离子束流有着巨大的优势。近年来，世界上多数重离子治疗中心都对重离子的辐射特性已经进行了深入研究，从2006年起中国科学院近代物理所也开始了重离子辐射治疗肿瘤的临床实验。目前绝大多数重离子治癌中心都采用了包括一对独立的二极铁的束流配送系统，将从加速器引出的笔形束流在肿瘤的各层等深横截面上进行均匀照射。本文重点阐述了HIRFL-CSR重离子治癌装置中的束流配送系统的工作原理和分系统结构，包括深层治癌重离子束运线，终端扫描系统和根据治疗计划生成的扫描路径软件系统。第一部分简单介绍了世界上各大重离子医疗辐射工程，总结了医疗重离子加速器的设计经验，尤其对日本的HIMAC和德国GSI重离子治癌装置进行了详细介绍，同时对新型重离子治癌装置的特点和重离子治癌装置的发展方向进行了介绍。侧重分析研究了束流引出系统、控制系统和扫描系统的工作原理和相关在线设备，详细比较了两种扫描方式的优缺点。第二部分重点介绍了HIRFL-CSR加速器及其重离子辐射应用工程。CSR是中国第一台重离子冷却存储环，其主加速器CSRm是在兰州重离子治癌装置的核心，负责提供对应不同穿透深度不同能量的慢引出束流。兰州近代物理所的治癌临床实验分为三个阶段，其中第一阶段利用HIRFL辐照终端引出的重离子束流对浅层肿瘤进行适形照射。第二阶段利用CSRm引出的重离子束流开展对深层肿瘤的辐照实验，包括动物实验和临床实验。第三阶段在技术成熟后将小型医用重离子加速器向社会推广。第三部分中总结回顾了深层治癌重离子束运线的设计原理和和束运线的磁聚焦结构。对扫描系统（栅扫描和点扫描）进行了计算机模拟和束斑尺寸的控制方式进行了讨论。在重离子深层治癌进行第一次动物实验时，利用位于终端的分条电离室测试了治癌重离子束流的基本参量，得到了引出束流在垂直和水平方向以及束流微结构的品质信息，并用梯度法测量了束流的发射度。这些工作对于模拟不同引出束流情况对应的不同扫描方式时束流照射均匀度很有帮助，也给制定肿瘤的治疗计划提供了一些参考。最后论文还简单介绍了束流的共振引出系统，侧重说明引出束流的特性，提及重离子垂直治疗终端桶型旋转机架的设计

重离子束介导植物转基因研究及其辐射育种的生物学效应

遗传转化是基因工程的一个重要研究方向，而利用重离子束介导转基因技术是近年来新兴的一门技术，这种技术的原理是利用离子束对植物细胞的蚀刻作用，造成受体细胞表面的损伤和穿孔，从而引起细胞膜透性和跨膜电场的改变，将外源基因引入植物细胞。特别是近年来植物总D NA转化技术得到了发展，借助离子束介导转移活性裸露D NA大分子已成为当前引人注目的一个研究方向。本论文将利用这一基因转导的新技术，探索基因高转化效率和稳定表达的转基因方法。而且，本论文还结合辐射育种研究了植物种子受辐照后的相关生物学效应。材料与方法： 本论文采用兰州重离子研究装置(HIRFL)加速的碳离子辐照植物种子，种子经辐照后，以常规手段进行基因转导。另一部分被照种子则萌发后，统计其发芽率，发芽势，微核，并进一步测定其多项酶学指标，分析它们与剂量之间的关系。结果：·低剂量辐照不能抑制种子的发芽率，反而有促进种子萌发的作用·低剂量辐照也能激活细胞的防御系统，部分抗氧化酶活性与LET有相关性。·作为主要抗氧化物质的SOD（超氧化物歧化酶）、CAT（过氧化氢酶）对剂量的反应不灵 敏，低剂量作用时不能发挥作用。这种情况卞可能主要由GsH佩Px（谷肤甘肤过氧化物酶）和NOS（一氧化氮合酶）发挥清除自由基的作用一·低剂量辐照可以促进种子萌发，高剂量则抑制种子的发芽。碳离子和电子辐照都能激活细胞的防系统。在幼苗期，抗氧化酶的分布不尽相同：SOD9超氧化物歧化酶（和GSH-PX（谷胱甘肽过氧化物酶）的活性是根茎部高于叶片部，而CAT（过氧化氢酶）的活性是叶片部更高。

Intense beam production of highly charged heavy ions by the superconducting electron cyclotron resonance ion source SECRAL (invited)

There has been increasing demand to provide higher beam intensity and high enough beam energy for heavy ion accelerator and some other applications, which has driven electron cyclotron resonance (ECR) ion source to produce higher charge state ions with higher beam intensity. One of development trends for highly charged ECR ion source is to build new generation ECR sources by utilization of superconducting magnet technology. SECRAL (superconducting ECR ion source with advanced design in Lanzhou) was successfully built to produce intense beams of highly charged ion for Heavy Ion Research Facility in Lanzhou (HIRFL). The ion source has been optimized to be operated at 28 GHz for its maximum performance. The superconducting magnet confinement configuration of the ion source consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamping. An innovative design of SECRAL is that the three axial solenoid coils are located inside of the sextupole bore in order to reduce the interaction forces between the sextupole coils and the solenoid coils. For 28 GHz operation, the magnet assembly can produce peak mirror fields on axis of 3.6 T at injection, 2.2 T at extraction, and a radial sextupole field of 2.0 T at plasma chamber wall. During the commissioning phase at 18 GHz with a stainless steel chamber, tests with various gases and some metals have been conducted with microwave power less than 3.5 kW by two 18 GHz rf generators. It demonstrates the performance is very promising. Some record ion beam intensities have been produced, for instance, 810 e mu A of O7+, 505 e mu A of Xe20+ 306 e mu A of Xe27+, and so on. The effect of the magnetic field configuration on the ion source performance has been studied experimentally. SECRAL has been put into operation to provide highly charged ion beams for HIRFL facility since May 2007.

System size and beam energy effects on probing the high-density behavior of nuclear symmetry energy with pion ratio

Based on the isospin-and momentum-dependent hadronic transport model IBUU04, we have investigated the pi(-)/pi(+) ratio in the following three reactions: Ca-48+Ca-48, Sn-124 +Sn-124 and Au-197+Au-197 with nearly the same isospin asymmetry but different masses, at the bombarding energies from 0.25 to 0.6 A GeV. It is shown that the sensitivity of probing the E-sym (rho) with pi(-)/pi(+) increases with increasing the system size or decreasing the beam energy, showing a correlation to the degree of isospin fractionation. Therefore, with a given isospin asymmetry, heavier system at energies near the pion threshold is preferential to study the behavior Of nuclear symmetry energy at supra-saturation densities.

Influence of ion energy and deposition temperature on the surface morphology of carbon films deposited by ion beams

Carbon films were deposited by mass-selected ion beam technique with ion energies 50-200eV at a substrate temperature from room temperature to 80 degreesC,. For the energies used, smooth diamond-like carbon films were deposited at room temperature. When the substrate temperature was 600 degreesC,rough graphitic films were produced. But highly oriented carbon tubes were observed when the energies were larger than 140eV at 800 degreesC. They were perpendicular to the surface and parallel to each other. preferred orientation of graphite basic plane was observed by high-resolution electron microscopy. Shallow ion implantation and stress are responsible for this orientation.

IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES

GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on Si have been implanted with Si ions at 1.2 MeV to dose of 1 x 10(15)/cm2. A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2 MeV. The experimental results show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers.