Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells

Excitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry

The influence of the Indium segregation on the interface asymmetry in InGaAs/GaAs quantum wells have been studied by reflectance-difference spectroscopy (RDS). It is found that the anisotropy of the 2H1E (2HH --> 1E) transition is very sensitive to the degree of the interface asymmetry. Calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. It demonstrates that the anisotropy intensity ratio of the 1L1E (1LH --> 1E) and 2H1E transitions measured by RDS can be used to characterize the interface asymmetry. (C) 2002 Elsevier Science B.V. All rights reserved.

Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells

Cyclotron resonance in CdTe/CdMgTe quantum wells (QWs) was studied. Due to the polaron effect the zero-field effective mass is strongly influenced by the QW width. The experimental data have been described theoretically by taking into account electron-phonon coupling and the nonparabolicity of the conduction band. The subband structure was calculated self-consistently. The best fit was obtained for an electron-phonon coupling constant alpha = 0.3 and bare electron mass of m(b) = 0.092m(0).

Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The optimum growth condition of GaInNAs/GaAs quantum wells (QWs) by plasma-assisted molecular beam epitaxy was investigated. High-resolution X-ray diffraction and photoluminescence (PL) measurements showed that ion damage drastically degraded the quality of GaNAs and GaInNAs QWs and that ion removal magnets can effectively remove the excess ion damage. Remarkable improvement of PL intensity and obvious appearance of pendellosung fringes were observed by removing the N ions produced in the plasma cell. When the growth rate increased from 0.73 to 1.2 ML/s, the optimum growth temperature was raised from 460 degreesC to 480 degreesC and PL peak intensity increased two times. Although the N composition decreased with increasing growth rate, degradation of optical properties of GaInNAs QWs was observed when the growth rate was over 0.92 ML/s. Due to low-temperature growth of GaInNAs QWs, a distinctive reflection high-energy electron diffraction pattern was observed only when the GaAs barrier was grown under lower As-4 pressure. The samples with GaAs barriers grown under lower As-4 pressure (V/III ratio about 24) exhibited seven times increase in PL peak intensity compared with those grown under higher As-4 pressure (V/III ratio about 50). (C) 2001 Elsevier Science B,V. All rights reserved.

Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells

We report on the fabrication of circular waveguide photodetectors with a response near 1.3 mu m wavelength using SiGe/Si multiple quantum wells. The quantum efficiency of the circular waveguide photodetector is improved when compared with that of the rib waveguide photodetector in the same wavelength at 1.3 mu m The frequency response of the photodetectors is simulated. The emciency-bandwidth product of the circular waveguide photodetectors is improved correspondingly. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells

Photocurrent (PC) spectra of ZnCdSe-ZnSe double multi-quantum wells are measured at different temperature. Its corresponding photocurrent derivative (PCD) spectra are obtained by computing, and the PCD spectra have greatly enhanced the sensitivity of the relative weak PC signals. The polarization dependence of the PC spectra shows that the transitions observed in the PC spectra are heavy-hole related, and the transition energy coincide well with the results obtained by envelope function approximation including strain. The temperature dependence of the photocurrent curves indicates that the thermal activation is the dominant transport mechanism of the carriers in our samples. The concept of saturation temperature region is introduced to explain why the PC spectra have different temperature dependence in the samples with different structure parameters. It is found to be very useful in designing photovoltaic devices.

Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

Assembly of the highest connectivity Wells-Dawson polyoxometalate coordination polymer: the use of organic ligand flexibility

Through tuning the length of flexible bis(triazole) ligands and different metal ion coordination geometries, four Wells-Dawson polyoxoanion-based hybrid compounds, [Cu-6(btp)(3)(P2W18O62)] center dot 3H(2)O (1) (btp = 1,3-bis(1,2,4-triazol-1-yl)propane), [Cu-6(btb)(3)((P2W18O62) center dot 2H(2)O (2), [Cu-3(btb)(6)(P2W18O62)] center dot 6H(2)O (btb = 1,4-bis(1,2,4-triazol-1-yl)butane) (3), and [Cu-3(btx)(5.5)((P2W18O62) center dot 4H(2)O (btx = 1,6-bis(1,2,4-triazol-1-yl)hexane) (4), were synthesized and structurally characterized. in compound 1, the metal-organic motif exhibits a ladder-like chain, which is further fused by the ennead-dentate [P2W18O62](6-) anions to construct a 3D structure. In compound 2, the metal-organic motif exhibits an interesting Cu-btb grid layer, and the ennead-dentate polyoxoanions are sandwiched by two Cu-btb layers to construct a 3D structure

非线性断裂力学的若干进展

<正> 自从Wells提出COD概念及Rice,Cherepanov提出J积分理论以来,非线性断裂力学引起了很大重视,目前这方面的研究工作已经渗透到各个领域,在韧性断裂的基本理论,疲劳裂纹扩展的力学理论,高温蠕变,环境强度等方面都得到广泛的应用。 非线性断裂力学,通常涉及到物理非线性和几何非线性的耦合作用,因此是一个非常复杂而有趣的领域。裂纹顶端的强烈的塑性变形,造成了局部的几何形状的改变。而这种几何形状改变又使本来已经十分复杂的塑性分析增加了困难。数学家正在试图寻找新的数学工具

Water and salt movements in simultaneous flood-irrigation and well-drainage operations

This paper describes a new technology for solonchak soil reclamation in which surface flood irrigation of fresh water and pumped wells drainage of salty groundwater are combined. The comprehensive investigation of water and salt movement has been conducted through field test, laboratory simulation and numerical calculation. The dependence of desalination on irrigation water quantity, drainage quantity, leaching time and other parameters is obtained based on the field tests. The entire desalination process under the flood-irrigation and well-drainage operations was experimentally simulated in a vertical soil column. The water and salt movement has been numerically analysed for both the field and laboratory conditions. The present work indicates that this new technology can greatly improve the effects of desalination.

注蒸汽井套管应力的数值计算与工业应用

在注蒸汽吞吐井的井筒应力模型中引入井筒温度场，利用ANSYS软件对不同约束条件下井简的应力场进行了计算．结果表明，最大热应力发生在套管内壁，超过了N80套管的弹性屈服极限，最大热膨胀发生在温度过渡区．当套管周围掏空时，热应变远大于材料的弹性极限应变，是诱发热采井套管变形损坏的主要原因．为此提出了相应的套管损坏防治措施，在油田现场采用厚壁合金钢TP120TH套管完井，试验结果验证了防治措施的有效性．