Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z

The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells.

Preparation and luminescence properties of Eu2+ in SiO2 xerogels

Al-doped and B, Al co-doped SiO2 xerogels with Eu2+ ions were prepared only by sol-gel reaction in air without reducing heat-treatment or post-doping. The luminescence characteristics and mechanism of europium doping SiO2 xerogels were studied as a function of the concentration of Al, B, the europium concentration and the host composition. The emission spectra of the Al-doped and B, Al codoped samples all show an efficient emission broad band in the blue violet range. The blue emission of the Al-doped sample was centered at 437 nm, whereas the B, Al co-doped xerogel emission maximum shifted to 423 nm and the intensity became weaker. Concentration quenching effect occurred in both the Al-doped and B, Al co-doped samples, which probably is the result of the transfer of the excitation energy from Eu2+ ions to defects. The highest Eu2+ emission intensity was observed for samples with the Si(OC2H5)(4):C2H5OH:H2O molar ratio of 1:2:4. (c) 2006 Elsevier B.V. All rights reserved.

PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX

Optical properties of single submonolayer InAs structures grown on GaAs (001) matrix are systematically investigated by means of photoluminescence acid time-resolved photoluminescence, It is shown that the formation of InAs dots with 1 ML height leads to localization of excitons under certain submonolayer InAs coverages, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures. (C) 1995 American Institute of Physics.

Nonlinear Optical Properties of AI-Doped nc-Si-SiO_2 Composite Films

The nonlinear optical properties of Al-doped nc-Si-SiO_2 composite films have been investigated using the time-resolved four-wave mixing technique with a femtosecond laser. The off-resonant third-order nonlinear susceptibility is observed to be 1.0 × 10~(-10) esu at 800nm. The relaxation time of the optical nonlinearity in the films is as short as 60fs. The optical nonlinearity is enhanced due to the quantum confinement of electrons in Si nanocrystals embedded in the SiO_2 films. The enhanced optical nonlinearity does not originate from Al dopant because there are no Al clusters in the films.

Study of intensity-dependent nonlinear optical coefficients of GaP optical crystal at 800 nm by femtosecond pump-probe experiment

The intensity-dependent two-photon absorption and nonlinear refraction coefficients of GaP optical crystal at 800 nm were measured with time-resolved femtosecond pump-probe technique. A nonlinear refraction coefficient of 1.7*10^(-17) m2/W and a two-photon absorption coefficient of 1.5*10^(-12) m/W of GaP crystal were obtained at a pump intensity of 3.5*10^(12) W/m2. The nonlinear refraction coefficient saturates at 3.5*10^(12) W/m2, while the two-photon absorption coefficient keeps linear increase at 6*10^(12) W/m2. Furthermore, fifth-order nonlinear refraction of the GaP optical crystal was revealed to occur above pump intensity of 3.5*10^(12) W/m2.

Growth and photoluminescence of InAlGaN films

Two quaternary InAlGaN films were grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire (0001) substrates with and without high-temperature GaN interlayer, respectively. The structural and optical properties of the quaternary films were investigated by high-resolution X-ray diffraction (HRXRD), high-resolution electron microscopy (HREM), temperature-dependent photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL) spectroscopy. According to the HRXRD and PL results, it is demonstrated that two samples have the same crystal quality. The TRPL signals of both samples were fitted well as a stretched exponential decay from 14 K to 250 K, indicating significant disorder in the materials, which is attributed to recombination of excitons localized in disorder quantum nanostructures such as quantum dots or quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-section HREM measurement further proves that there exist disorder quantum nanostructures in the quaternary. By investigating the temperature dependence of the dispersive exponent beta, it is shown that the stretched exponential decays of the two samples originate from different mechanisms. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

On the nature of iron in InP: A FTIR study

Fe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-speed electronic and optoelectronic devices. High resolved absorption spectra of the internal d-d shell transitions at Fe2+ in InP and the related phonon sidebands and a series of iron related absorption Lines are presented. Detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(ZPLs), which are attributed to transitions within the 5D ground state of Fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

Electron spin dynamics in heavily Mn-doped (Ga,Mn)As

Electron spin relaxation and related mechanisms in heavily Mn-doped (Ga,Mn) As are studied by performing time-resolved magneto-optical Kerr effect measurements. At low temperature, s-d exchange scattering dominates electron spin relaxation, whereas the Bir-Aronov-Pikus mechanism and Mn impurity scattering play important roles at high temperature. The temperature-dependent spin relaxation time exhibits an anomaly around the Curie temperature (T(c)) that implies that thermal fluctuation is suppressed by short-range correlated spin fluctuation above T(c). (C) 2010 American Institute of Physics. [doi:10.1063/1.3531754]

DIRECT MASS MEASUREMENTS OF EXOTIC NUCLEI IN STORAGE RINGS

Mass measurements of exotic nuclei is a fast, developing field which is essential for basic nuclear physics and a wide range of applications. The method of storage ring mass spectrometry has many advantages: (1) a large amount of nuclides can be simultaneously measured; (2) very short-lived (T-1/2 greater than or similar to 50 mu s) and very rare species (yields down to single ions) can be accessed; (3) nuclides in several atomic charge states can be investigated, (4) half-life measurements can be performed with time-resolved mass spectrometry. In this contribution we concentrate on some recent achievements and future perspectives of the storage ring mass spectrometry.

Photodissociation dynamics of the methyl radical at 212.5 nm: Effect of parent internal excitation

Photodissociation dynamics of the CH3 radical at 212.5 nm has been investigated using the H atom Rydberg tagging time-of-flight method with a pure CH3 radical source generated by the photolysis of CH3I at 266 nm. Time-of-flight spectra of the H atom products from the photolysis of both cold and hot methyl radicals have been measured at different photolysis polarizations. Experimental results indicate that the photodissociation of the methyl radical in its ground vibrational state at 212.5 nm excitation occurs on a very fast time scale in comparison with its rotational period, indicating the CH3 dissociation at 212.5 nm occurs on the excited 3s Rydberg state surface. Experimental evidence also shows that the photodissociation of the methyl radical in the nu(2)=1 state of the umbrella mode at 212.5 nm excitation is characteristically different from that in the ground vibrational state. (C) 2004 American Institute of Physics.

Ultrafast dynamics of dye molecules in solution as a function of temperature

Femtosecond time-resolved studies using fluorescence depletion spectroscopy were performed on Rhodamine 700 in acetone solution and on Oxazine 750 in acetone and formamide solutions at different temperatures. The experimental curves that include both fast and slow processes have been fitted using a biexponential function. Time constants of the fast process, which corresponds to the intramolecular vibrational redistribution (IVR) of solute molecules, range from 300 to 420 fs and increase linearly as the temperature of the environment decreases. The difference of the average vibrational energy of solute molecules in the ground state at different temperatures is a possible reason that induces this IVR time-constant temperature dependence. However, the time constants of the slow process, which corresponds to the energy transfer from vibrational hot solute molecules to the surroundings occurred on a time scale of 1-50 ps, changed dramatically at lower temperature, nonlinearly increasing with the decrease of temperature. Because of the C-H...O hydrogen-bond between acetone molecules, it is more reasonable that acetone molecules start to be associated, which can influence the energy transfer between dye molecules and acetone molecules efficiently, even at temperatures far over the freezing point.

Selecting ionization path by dynamic stark shift with strong laser pulse

Multiphoton ionization of NO via intermediate Rydberg states with ultra-short laser pulses is investigated with time-resolved photoelectron spectroscopy in combination with fermosecond pump-probe technology. The Rydberg states of NO, which are characterized by obvious ac-Stark shift in ultra-strong laser field, can be tuned in resonance to ionize NO molecule at one's will with identical laser pulses, i.e., one can 'select' resonance path to ionization. The results shown in this Letter demonstrate that the states holding notable dynamic Stark shift provide us another dimension to chemical control with strong laser field. (C) 2003 Elsevier Science B.V. All rights reserved.

Hole-transporting polymers containing carbazol-3,9-diyl and 1,4-phenylene fragments in the main chain

New carbazole-based polymers, which contain various content of electro-active fragments in the main chain connected via alkylene spacers, have been synthesized by Ni(0)-catalyzed Yamamoto-type aryl-aryl coupling reactions. These compounds represent amorphous materials of high thermal stability with glass-transition temperatures of 139-151 degrees C and thermal decomposition starting at temperatures above 400 degrees C. UV-vis absorption and photoluminescence emission spectra of the materials confirmed that the conjugated segments in the macromolecules are rather short.