EER studies of the single quantum well GaAs/AlxGa1-xAs electrode/nonaqueous solution interface

The interfacial behavior of the single quantum well (SQW) GaAs/AlxGa1-xAs electrode in HQ/BQ and Fc/Fc(+) electrolytes was characterized respectively by studying the quantum confined Stark effect and Franz-Keldysh oscillation with electrolyte electroreflectance spectroscopy. The interaction of the surface state of the SQW electrode with redox species and its effects on the distribution of external bias at the interface of the SQW electrode are discussed.

Photoluminescence studies of GaAs/AlGaAs single quantum well intermixed by Ga+ ion implantation

Ga(+)ion implantation followed by rapid thermal annealing (RTA) was used to enhance the interdiffusion in GaAs/AlGaAs single Quantum Wells(SQWs). The extent of intermixing was found to be dependent on the well depth, number of implanted ions and annealing time. A very fast interdiffusion process occurs at the initial annealing stage. After that, the enhanced diffusion coefficient goes back to the umimplanted value. We propose a two-step model to explain the diffusion process as a function of the annealing time : a fast diffusion process and a saturated diffusion process. The interdiffusion coefficient of the fast diffusion was found to be of well depth dependence and estimated to be in the range of 5.4x10(-16) similar to 1.5x10(-15)cm(2)s(-1). Copyright (C) 1996 Published by Elsevier Science Ltd

Long period grating for 3-5 mu m quantum-well infra-red photodetectors

By considering all possible high order diffracted waves, the authors calculate the coupling efficiency of long period gratings for 3-5 mu m quantum-well infra-red photodetectors (QWIPs) on the basis of the modal expansion model (MEM). A large coupling efficiency for 3-5 mu m QWIPs has been demonstrated. This greatly reduces the difficulties in fabricating 3-5 mu m grating coupled QWIPs and opens the way to fabricate high performance 3-5 mu m and two colour QWIPs image arrays.

X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well

Ultrathin single quantum well (about one monolayer) grown on GaAs(001) substrate with GaAs cap layer has been studied by high resolution x-ray diffractometer on a beamline of the Beijing Synchrotron Radiation Facility. The interference fringes on both sides of the GaAs(004) Bragg peak are asymmetric and a range of weak fringes in the higher angle side of the Bragg peak is observed. The simulated results by using the kinematical diffraction method shows that the weak fringe range appears in the higher angle side when the phase shift introduced by the single quantum well is very slightly smaller than m pi (m:integer), and vice versa. After introducing a reasonable model of single quantum well, the simulated pattern is in good agreement with the experiment. (C) 1996 American Institute of Physics.

Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser

Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained by a 6x6 Hamiltonian (including heavy hole, light hole and spin-orbit splitting band), optical gain and radiative current density are calculated for the strained quantum well laser structures. The compressive strain in the GaN well region strongly depresses the TM mode optical gain and enhances the TE mode optical gain.

DETERMINATION OF THE X-CONDUCTION-SUBBAND ENERGIES IN TYPE-II GAAS/ALAS/GAAS QUANTUM-WELL BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the X conduction-subband energy levels in an AlAs well sandwiched by double GaAs layers were determined. Calculation gives eight subbands in the well with well width of 50 Angstrom. Among them, five levels and the other three remainders are determined by using the large longitudinal electron effective mass m(1)(1.1m(0)) and transverse electron effective mass m(t)(0.19m(0)) at X valley, respectively. Two subbands with the height energies were hardly detectable and the other six ones with lower energies are active in the present DLTS study. Because these six subbands are close to each other, we divided them into three groups. Experimentally, we observed three signals induced from the three groups. A good agreement between the calculation and experiment was obtained. (C) 1995 American Institute of Physics.

A DOUBLE-QUANTUM-WELL IN A DRIVING LASER FIELD

The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help of SU(2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.

INFRARED-ABSORPTION DUE TO 2-DIMENSIONAL-ELECTRON-GAS COLLECTIVE EXCITATION IN GAAS/ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES

Infrared absorption due to a collective excitation of a two-dimensional electronic gas was observed in GaAs/AlxGa1-xAs multiple-quantum wells when the incident light is polarized parallel to the quantum-well plane. We attribute this phenomenon to a plasma oscillation in the quantum wells. The measured wavelength of the absorption peak due to the plasma oscillation agrees with our theoretical analysis. In addition, in this study the plasma-phonon coupling effect is also fitted to the experimental result. We show that the absorption is not related to the intersubband transitions but to the intrasubband transition, which originates from a plasma oscillation.

PHOTOLUMINESCENCE STUDIES OF CHEMICAL ADSORPTION OF GAAS/ALXGA1-XAS MULTIQUANTUM-WELL SEMICONDUCTOR

Adsorption of ferrocene and p-methylnitrobenzene on a GaAs/AlxGa1-xAs multiquantum well semiconductor is characterized by the changes in the photoluminescent response in terms of the interactions of adsorbed molecules with surface states.

PHOTOLUMINESCENCE STUDY OF GAAS/ALGAAS QUANTUM-WELL HETEROSTRUCTURE INTERFACES

Photoluminescence (PL) is used to study the interface properties of GaAs/AlGaAs quantum well (QW) heterostructures prepared by molecular beam epitaxy with growth interruption (GI). The discrete luminescence lines observed for the sample with GI are assigned to the splitting of the heavy-hole exciton associated with heterointerface islands with the lateral size greater than exciton diameter and mean height less than one monolayer, and the spectra have the Gaussian lineshapes. The results strongly support the microroughness model. We also study the temperature dependence of the exciton energies and find that excitons are localized at the interface roughness at low temperature even in the sample with GI. The lateral size of the microroughness of the GI sample is estimated to be less than 5 nm from the exciton localization energy.

ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING

Quantum well disordering of GaAs/AlGaAs multiple quantum well(MQW) has been accomplished with only plasma enhanced chemical vapor deposited (PECVD) SiN cap layer growth. The amount of blue shift increases with SiN growing time. This result has been explained by the vacancy indiffusion during PECVD SiN growth. Rapid thermal annealing (RTA) of the sample after SiN cap layer growth at 850 degrees C for 35 s caused a larger amount of blue shift than those obtained without RTA. By considering the model of Al diffusion from AlGaAs barrier into GaAs QWs together with the result from photoluminescence (PL) measurement, Al diffusion coefficients were calculated. The Al diffusion coefficient due to PECVD SiN was estimated at about 3 x10(-17) cm(2)/s. It was possible to extract the effect of RTA on the QW disordering, which showed that the amount of the blue shift and the Al diffusion coefficient due only to RTA increases with SiN cap layer thickness as reported by Chi et al.(10))

STUDIES ON TUNNELING ESCAPE TIME OF ELECTRONS FROM A QUANTUM-WELL IN MULTILAYERED HETEROSTRUCTURES

By considering the time variation of band-edge profile arising from the decay of injected charge in quantum wells(QWs), we employ a wave packet method to verify that the actual escape time of certain amount of electrons from QWs could be much larger than that for a single electron. The theoretical result is also in agreement with our measurement of escape time, performed by using a newly developed method--transient current response.

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

Spin splitting of conduction subbands in Al_(0.3)Ga_(0.7)As/GaAs/Al_xGa_(1-x)As/Al_(0.3)Ga_(0.7)As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference. The dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. Without an external electric field, the spin splitting is induced by an in terface related Rashba term due to the built-in structure inversion asymmetry. Applying the external electric field to the step QW, the Rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.

Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in mainland China. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.

截止波长12μm的InAs0.04Sb0.96/GaAs的熔体外延生长及特性研究

用熔体外延(ME)法在半绝缘(100)GaAs衬底上成功生长出了截止波长为12 μm的InAs0.04Sb0.96外延层.傅立叶变换红外(FTIR)透射光谱揭示,InAsSb合金的禁带宽度被强烈变窄.通过分析InAs0.04Sb0.96外延层载流子浓度的温度依存性表明,其室温禁带宽度为0.105 5 eV,与透射光谱测得的数值很好地一致.通过测量12～300 K的吸收光谱,研究了InAs0.04Sb0.96/GaAs的禁带宽度的温度依存性.霍尔测量得出300 K下样品的电子迁移率为4.47×104 cm2/Vs,载流子浓度为8.77×1015 cm-3;77 K下电子迁移率为2.15×104 cm2/Vs,载流子浓度为1.57×1015 cm-3;245 K下的峰值迁移率为4.80×104 cm2/Vs.