Some properties of gallium nitride films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy

The Raman and photoreflectivity spectra of gallium nitride (GaN) films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy (GSMBE) have been investigated. The Raman spectra showed the presence of the E-2(high) mode and a shift in the wavenumber of this mode with respect to the GaN epilayer thickness. The Raman scattering results suggest the presence of stress due to lattice and thermal expansion misfit in the films, and also indicate that the buffer layer play an important role in the deposition of high quality GaN layers. The residual stress changes from tensile to compressive as the epilayer thickness increases. Samples subjected to anneal cycles showed an increase in the mobility due probably to stress relaxation as suggested by an observed shift in the E-2(high) mode in the Raman spectra after annealing.

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

Experimental study of mode characteristics for equilateral triangle semiconductor microcavities

Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well asthe active region are fabricated by the inductively coupled plasma (ICP) etching technique. The modecharacteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaksof the photoluminescence spectra corresponding to the fundamental transverse modes are observed formicrocavities with side lengths of 5 and 10 μm. The mode wavelength spacings measured experimentallycoincide very well with those obtained by the theoretical formulae.

Calculation of Valence Subband Structures for Strained Quantum-Wells by Plane Wave Expansion Method Within 6 * 6 Luttinger-Kohn Model

The valence subband energies and wave functions of a tensile strained quantum well are calculated by the plane wave expansion method within the 6 * 6 Luttinger-Kohn model. The effect of the number and period of plane-waves used for expansion on the stability of energy eigenvalues is examined. For practical calculation, it should choose the period large sufficiently to ensure the envelope functions vanish at the boundary and the number of plane waves large enough to ensure the energy eigenvalues keep unchanged within a prescribed range.

MOCVD growth of high quality crack-free GaN on Si(III) substrates

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.

A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth

A novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of graded tensile strained bulk-like structure. which can not only enhance TM mode material gain and further realize polarization-insensitivity, but also get a large 3dB bandwidth due to different strain introduced into the active layer. 3dB bandwidth more than 40nm. 65nm has been obtained in die experiment and theory, respectively. The characteristics of such polarization insensitive structure have been analyzed, The influence of the amount of strain and of the thickness of strain layer on the polarization insensitivity has been discussed.

Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

Spin splitting modulated by uniaxial stress in InAs nanowires

We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k center dot p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.

Shear transformation zone volume determining ductile–brittle transition of bulk metallic glasses

Three-point bending experiments were performed on as-cast and annealed samples of Zr52.5Cu17.9Ni14.6Al10Ti5 (Vit105) bulk metallic glasses over a wide range of temperatures varying from room temperature (293 K) to liquid nitrogen temperature (77 K). The results demonstrated that the free volume decrease due to annealing and/or cryogenic temperature can reduce the propensity for the formation of multiple shear bands and hence deteriorate plastic deformation ability. We clearly observed a sharp ductile-to-brittle transition (DBT), across which microscopic fracture feature transfers from micro-scale vein patterns to nano-scale periodic corrugations. Macroscopically, the corresponding fracture mode changes from ductile shear fracture to brittle tensile fracture. The shear transformation zone volume, taking into account free volume, temperature and strain rate, is proposed to quantitatively characterize the DBT behavior in fracture of metallic glasses.

Deformation behaviour of electrodeposited nanocrystalline Ni with broad grain size distribution

In the present work, nanocrystalline Ni (nc-Ni) with a broad grain size distribution (BGSD) of 5-120 nm and an average grain size of 27.2 nm was prepared. The BGSD nc-Ni sample shows a similar strength and good ductility in comparison with electrodeposited nc-Ni with a narrow grain size distribution. The intracrystalline dislocation network was observed in the post-deformed microstructure confirming the conventional intracrystalline dislocation sliding mechanism in BGSD nc-Ni. The uniaxial tensile loading-unloading-loading deformation shows BGSD nc-Ni has the capability to store dislocations in the grain interior, which is very limited compared with that of coarse grained metals. For BGSD nc-Ni, the strain rate sensitivity of flow stress m enhances with decreasing strain rate. At the strain rate of 5 x 10(-6) s(-1), m was estimated to be 0.055. At the corresponding strain rate, the enhanced ductility along with the decreased strength was achievable, indicating activation of other deformation mechanisms, e. g. grain boundary sliding or diffusion.

Wurtzite-to-tetragonal structure phase transformation and size effect in ZnO nanorods

The deformation of [0001]-oriented ZnO nanorods with hexagonal cross sections under uniaxial tensile loading is analyzed through molecular statistical thermodynamics (MST) simulations. The focus is on the size dependence of mechanical behavior in ZnO nanorods with diameters ranging from 1.95 to 17.5 nm. An irreversible phase transformation from the wurtzite (P6(3)mc space group) structure to a tetragonal structure (P4(2)/mnm space group) occurs during the tensile loading process. Young's modulus before the transformation demonstrates a size dependence consistent with what is observed in experiments. A stronger size dependence of response is seen after the transformation and is attributed to the polycrystalline nature of the transformed structure. A comparison of the MST and molecular dynamics (MD) methods shows that MST is 60 times faster than MD and yields results consistent with the results of MD.

Fracture behavior of a Zr-metallic glass under dynamic compression

Dynamic planar compressive experiments on a typical tough Zr-BMG (Bulk Metallic Glass) were carried out under impact velocity of 500-600 m/sec and strain rate of 10(6)/s. The fracture surface of samples exhibits different fracture patterns at different parts of the sample. At a corner close to the front loading boundary, fracture patterns from the free edge toward the centre changed from equiaxial veins in microscale to periodic corrugations in nanoscale; in the middle of the sample, the fracture surface contains glazed zones laid out orderly along the same boundary. FEM simulation was performed to investigate the stress distributions in the impacted sample under a short duration impact loading. It has revealed that the fracture patterns changing from the free edge toward the centre were resulted from the fracture modes' changing from the tensile dominant fracture to the shear dominant fracture. Whereas at the middle part of the sample, fracture initiated from several parallel shear bands propagating close to the same boundary is due to a large strain or much higher shear stress in this area.

Quasi-3D Cytoskeletal Dynamics of Osteocytes under Fluid Flow

Osteocytes respond to dynamic fluid shear loading by activating various biochemical pathways, mediating a dynamic process of bone formation and resorption. Whole-cell deformation and regional deformation of the cytoskeleton may be able to directly regulate this process. Attempts to image cellular deformation by conventional microscopy techniques have been hindered by low temporal or spatial resolution. In this study, we developed a quasi-three-dimensional microscopy technique that enabled us to simultaneously visualize an osteocyte's traditional bottom-view profile and a side-view profile at high temporal resolution. Quantitative analysis of the plasma membrane and either the intracellular actin or microtubule (MT) cytoskeletal networks provided characterization of their deformations over time. Although no volumetric dilatation of the whole cell was observed under flow, both the actin and MT networks experienced primarily tensile strains in all measured strain components. Regional heterogeneity in the strain field of normal strains was observed in the actin networks, especially in the leading edge to flow, but not in the MT networks. In contrast, side-view shear strains exhibited similar subcellular distribution patterns in both networks. Disruption of MT networks caused actin normal strains to decrease, whereas actin disruption had little effect on the MT network strains, highlighting the networks' mechanical interactions in osteocytes.