370 resultados para Nd YV O4


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We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM), and the pulse repetition rate is 83 MHz.

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Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW

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1mNd

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,NdYAG,5 W,11 ps200 nsQ,30 nJ,10 Hz2 nJ,15 Q,Q

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NdYAGNdYAG2 W10 ps,100 MHz

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(LD)NdYAG500 W-NdYAG47%575 W-26.1%He-Ne

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A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped NdYAG laser at 1.06m,is realized.The pulse frequency is 150MHz.

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,,ps.,,,Nd:YAG.4 W,,150 MHz,300 mW,10 ps.

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(SESAM),5 WNd:YAG,,.,10 ps.,,,,-19%.

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Stable continuous-wave passive mode-locking of diode-end-pumped Nd:GdVO4 and Nd:YAG lasers withsemiconductor saturable absorber mirrors (SESAMs) are reported. The comparative study shows that theNd:GdVO4 crystal is efficient to decrease the Q-switched mode-locking tendency, and easier to continuous-wave (CW) mode lock than Nd:YAG.

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Nd:YAGNd:GdVO41064nm42.6W23.7

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A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reportedThe wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler62ns pulse duration of single pulse is obtained.

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Nd:YAG37.9 W1064nm-23.7%..

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Nd:YAG37.9W1064 nm31.5%23.7%

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2010-11-23