倒锥波导耦合器的制作方法

一种倒锥波导耦合器的制作方法，包括如下步骤:步骤1:在SOI上用电子束光刻和感应耦合等离子体刻蚀技术，将SOI的硅波导层刻蚀为一倒锥波导和微纳波导集成器件;步骤2:利用有机/无机杂化的溶胶凝胶法制备光敏性溶胶薄膜材料;步骤3:在SOI的SiO2隔离层及倒锥波导和微纳波导集成器件上旋涂溶胶薄膜;步骤4:对旋涂的溶胶薄膜进行前烘、凝胶;步骤5:在溶胶薄膜上利用掩模版进行紫外写入;步骤6:腐蚀掉紫外写入区以外的部分溶胶薄膜，形成光纤耦合波导，该光纤耦合波导和倒锥波导构成倒锥波导耦合器;步骤7:后烘，完成倒锥波导耦合器的制作。

生长半绝缘砷化镓的石英管及在砷化镓中掺碳的方法

一种使用生长半绝缘砷化镓的石英管在砷化镓中掺碳的方法，包括如下步骤:步骤1:将7N Ga和7N As进行多晶合成，形成GaAs多晶;步骤2:将合成好的GaAs多晶、籽晶和B2O3放入PBN坩埚;步骤3:将PBN坩埚放入石英管的石英体中;步骤4:将纯石墨固定在石英管的石英帽上的石英槽内;步骤5:将石英体和石英帽盖合，抽真空，用氢氧焰焊接石英管的石英体和石英帽;步骤6:将焊接后的石英管放入VGF单晶炉，进行气氛掺杂，单晶生长;步骤7:将晶体生长后的PBN坩埚放入甲醇内浸泡，得到GaAs单晶，完成GaAs单晶的制备。

用于半导体器件中的取样光栅的制作方法

一种用于半导体器件的取样光栅的制作方法，其特征在于，包括如下步骤:步骤1:在衬底上依次生长缓冲层、下波导层、多量子阱、上波导层，得到含有半导体波导结构的芯片;步骤2:在上波导层的上面，均匀地涂上一层光刻胶;步骤3:对涂有光刻胶的芯片进行全息曝光，使光刻胶上印制出条状的光栅轮廓;步骤4:将芯片置于取样周期光刻版之下进行二次曝光，二次曝光后对芯片上的光刻胶显影，使光刻胶形成有光栅轮廓的胶条;步骤5:对显影好的芯片，进行离子刻蚀，在上波导层上得到光栅;步骤6:用腐蚀液修整光栅形貌，完成取样光栅的制作。本发明具有成本低、适于大规模生产的优点。

Concentration effect of Mn2+ on the photoluminescence of ZnS : Mn nanocrystals

Mn-doped ZnS nanocrystals of about 3 nm diameter were synthesized by a wet chemical method. X-ray diffraction (XRD) measurements showed that the nanocrystals have the structure of cubic zinc blende. The broadening of the XRD lines is indicative of nanomaterials. Room temperature photoluminescence (PL) spectrum of the undoped sample only exhibited a defected-related blue emission band. But for the doped samples, an orange emission from the Mn2+ T-4(1)-(6)A(1) transition was also observed, apart from the blue emission. The peak position (600 nm) of the Mn2+ emission was shifted to longer wavelength compared to that (584 nm) of bulk ZnS:Mn. With the increase of the Mn2+ concentration, the PL of ZnS:Mn was significantly enhanced. The concentration quenching effect was not observed in our experiments. Such PL phenomena were attributed to the absence of Mn2+ pairs in a single ZnS:Mn nanocrystal, considering the nonradiative energy transfer between Mn2+ ions based on the Poisson approximation. (c) 2005 Elsevier B.V. All rights reserved.

Structural and optical investigation of Mn-doped ZnS nanocrystals

Using a solution-based chemical method, we have prepared ZnS nanocrystals doped with high concentration of Mn2+. The X-ray diffraction analysis confirmed a zinc blende structure. The average size was about 3 nm. Photoluminescence spectrum showed room temperature emission in the visible spectrum, which consisted of the defect-related emission and the T-4(1)-(6)A(1) emission of Mn2+ ions. Compared with the undoped sample, the luminescence of the ZnS:Mn sample is enhanced by more than an order of magnitude, which indicated that the Mn2+ ions can efficiently boost the luminescence of ZnS nanocrystals.

Investigation of phtoluminesecence under hydrostatic pressure in different sized ZnS : Mn nanoparticles

The PL spectra for the 10, 4. 5, 3. 5, 3, 1 nm sized ZnS:Mn2+ nanoparticles and corresponding bulk material under different pressures were investigated. The orange emission band originated from the T-4(1)-(6)A(1) transition of Mn2+ ions showed obvious red shift with the increasing of pressures. The pressure coefficients of Mn-related emissions measured from bulk, 10, 4. 5, 3.5 and 3 nm samples are -29.4 +/- 0.3, -30.1 +/- 0.3, -33.3 +/- 0.6, -34.6 +/- 0.8 and -39 +/- 1 meV/GPa, respectively. The absolute value of the pressure coefficient increases with the decrease of the size of particles. The size dependence of crystal field strength Dq and Racah parameter B accounts for the size behavior of the Mn-related emission in ZnS:Mn nanoparticles. The pressure behavior of Mn-related emission in the 1 nm sized sample is somewhat different from that of other nanoparticles. It may be due to smaller size of 1 nm sample and the special surface condition since ZnS nanoparticles are formed in the cavities of ziolite-Y for the 1 nm sample.

Photoluminescence of doped ZnS nanoparticles under hydrostatic pressure

The pressure dependence of the photoluminescence from ZnS : Mn2+, ZnS : Cu2+, and ZnS : Eu2+ nanoparticles were investigated under hydrostatic pressure up to 6 GPa at room temperature. Both the orange emission from the T-4(1) - (6)A(1) transition of Mn2+ ions and the blue emission from the DA pair transition in the ZnS host were observed in the Mn-doped samples. The measured pressure coefficients are -34.3(8) meV/GPa for the Mn-related emission and -3(3) meV/GPa for the DA band, respectively. The emission corresponding to the 4f(6)5d(1) - 4f(7) transition of Eu2+ ions and the emission related to the transition from the conduction band of ZnS to the t(2) level of Cu2+ ions were observed in the Eu- and Cu-doped samples, respectively. The pressure coefficient of the Eu-related emission was found to be 24.1(5) meV/GPa, while that of the Cu-related emission is 63.2(9) meV/GPa. The size dependence of the pressure coefficients for the Mn-related emission was also investigated. The Mn emission shifts to lower energies with increasing pressure and the shift rate (the absolute value of the pressure coefficient) is larger in the ZnS : Mn2+ nanoparticles than in bulk. Moreover, the absolute pressure coefficient increases with the decrease of the particle size. The pressure coefficients calculated based on the crystal field theory are in agreement with the experimental results. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetism and photoluminescence in manganese-gallium oxide nanowires with monoclinic and spinel structures

Manganese-gallium oxide nanowires were synthesized via in situ Mn doping during nanowire growth using a vapor phase evaporation method. The microstructure and composition of the products were characterized via transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The field and temperature dependence of the magnetization reveal the obvious hysteresis loop and large magnitude of Curie-Weiss temperature. The photoluminescence of the manganese-gallium oxide nanowires were studied in a temperature range between 10 and 300 K. A broad green emission band was observed which is attributed to the T-4(1)-(6)A(1) transition in Mn2+ (3d(5)) ions. (c) 2005 Elsevier B.V. All rights reserved.

Temperature behaviour of the orange and blue emissions in ZnS : Mn nanoparticles

The temperature dependences of the orange and blue emissions in 10, 4.5, and 3 nm ZnS:Mn nanoparticles were investigated. The orange emission is from the T-4(1)-(6)A(1) transition of Mn2+ ions and the blue emission is related to the donor-acceptor recombination in the ZnS host. With increasing temperature, the blue emission has a red-shift. On the other hand, the peak energy of the orange emission is only weakly dependent on temperature. The luminescence intensity of the orange emission decreases rapidly from 110 to 300 K for the 10 nm sample but increases obviously for the 3 nm sample, whereas the emission intensity is nearly, independent of temperature for the 4.5 nm sample. A thermally activated carrier-transfer model has been proposed to explain the observed abnormal temperature behaviour of the orange emission in ZnS:Mn nanoparticles.

Temperature and pressure dependences of the Mn2+ and donor-acceptor emissions in ZnS : Mn2+ nanoparticles

Temperature and pressure dependent measurements have been performed on 3.5 nm ZnS:Mn2+ nanoparticles. As temperature increases, the donor-acceptor (DA) emission of ZnS:Mn2+ nanoparticles at 440 nm shifts to longer wavelengths while the Mn2+ emission (T-4(1)-(6)A(1)) shifts to shorter wavelengths. Both the DA and Mn2+ emission intensities decrease with temperature with the intensity decrease of the DA emission being much more pronounced. The intensity decreases are fit well with the theory of thermal quenching. As pressure increases, the Mn2+ emission shifts to longer wavelengths while the DA emission wavelength remains almost constant. The pressure coefficient of the DA emission in ZnS:Mn2+ nanoparticles is approximately -3.2 meV/GPa, which is significantly smaller than that measured for bulk materials. The relatively weak pressure dependence of the DA emission is attributed to the increase of the binding energies and the localization of the defect wave functions in nanoparticles. The pressure coefficient of Mn2+ emission in ZnS:Mn2+ nanoparticles is roughly -34.3 meV/GPa, consistent with crystal field theory. The results indicate that the energy transfer from the ZnS host to Mn2+ ions is mainly from the recombination of carriers localized at Mn2+ ions. (C) 2002 American Institute of Physics.

甚短距离光传输技术

本书从光电子器件及其在光通信领域的应用出发，介绍了甚短距离光传输技术的组成、原理、实现方案、技术性能、关键技术以及在高速互连领域内的应用等。本书重点阐述了垂直腔面发射激光器的原理、工艺和特性；10gb/s和40gb/s传输方案的具体实现及其性能指标；甚短距离光传输涉及到的各项关键技术，如新型多模光纤技术、cwdm复用技术、硅探测器技术、高速光电集成(oeic)技术以及相关高速网络技术等。

中国材料工程大典—信息功能材料工程

本书是《中国材料工程大典》中的卷目之一。 信息功能材料是信息科学技术和信息产业发展的基础和先导。21世纪将是以信息产业为核心的知识经济时代，对信息技术和信息资源的竞争将更加激烈。我国电子信息行业2004年完成产品销售收入达26500亿元，多年来已居外贸出口首位，并继续以高出工业发展速度10％的速度发展，已成为世界信息产业大国。加快由信息产业大国向信息产业强国迈进的步伐，是我们广大从事信息技术，特别是信息功能材料工作者义不容辞的责任。希望《中国材料工程大典》中《信息功能材料工程》卷的出版，将有力推动我国信息技术和信息产业的健康发展。 《信息功能材料工程》分上、中、下卷，共设20篇，约600万字。它涉及到信息的获取、传输、存储、显示和处理等主要技术用的材料与器件，是目前我国该领域比较完整的专业工具书。参加这部书编写的有中科院、高校和部分企业的专家教授近200名。参加编写的主要单位有中科院半导体研究所、中科院物理研究所、中科院微电子研究所、中科院上海精密光学机械研究所、中科院上海红外技术物理研究所、中科院长春应用化学研究所、中科院合肥固体物理所、南京大学、清华大学、西安理工大学、北京有色金属研究总院、武汉邮电科学研究院等。历时近3年完稿。由王占国、陈立泉、屠海令任主编并统稿。 本卷各篇不仅全面系统地反映了国外信息功能材料研究领域的现状、最新进展和发展趋势，而且也特别注重我国在该领域的研发和产业化方面取得的成果，力图使其具有实用性、先进性和权威性。本书适合于从事信息功能材料的科研工作者和工程技术人员查阅使用，也可供有关师生参考。

碳材料的拉曼光谱

碳元素具有形成各种结构的同素异型体的奇特性质，从维度上讲，既有三维材料(如金刚石、石墨和无定形碳等)，也有一维材料(石墨晶须、炭纤维和碳纳米管)和零维材料(如富勒烯和碳纳米葱等)，因此，关于炭材料物性的研究一直是物理和化学科学非常活跃的研究领域之一。由于碳纳米管具有巨大的理论研究价值和应用前景，碳纳米管也成为纳米材料研究的前沿和热点。拉曼光谱被视为研究碳纳米管及其相关材料的结构特征的重要手段之一。

半导体科学与技术

本书是在国家自然科学基金委员会信息科学部的支持下，邀请了三十余位工作在半导体研究领域第一线的知名专家撰写而成的。本书系统介绍了当前国际、国内半导体科学和技术各个领域，包括半导体材料的生长、物理问题、重要实验和理论结果、器件结构和应用等方面的基础知识、研究现状、发展趋势和有待解决的关键问题。 本书适合从事半导体研究和教学的大学教师、科技工作者、工程技术人员、研究生、本科生以及科技管理部门有关工作人员和管理专家阅读和参考。

对低轮SAFER++的差分-非线性密码分析

SAFER++是进入NESSIE第2轮评估的7个分组算法之一。采用差分密码分析和非线性密码分析相结合的方法对4轮、5轮和6轮SAFER++进行分析，结果表明：6轮SAFER++对这种攻击方法不免疫；攻击4轮和5轮SAFER++时，与已有结果相比，攻击复杂度大大减小。攻击对2\+{250}个256比特长度的密钥有效。