The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers

The behaviors of lateral propagating modes in the aperture and the oxidized regions are investigated numerically for selectively oxidized vertical-cavity surface-emitting lasers (VCSELs). The results show that the lateral propagating modes in the oxidized region are greatly affected by the oxide layer due to its low index, the modes are divergence for the VCSELs with sufficient thick double oxide layers. So the coupling between the modes in the aperture and oxidized regions is very weak, and we can expect that the lateral spontaneous emission is greatly affected in this case. Ignoring the contribution of the lateral spontaneous emission, we calculate spontaneous emission factor by counting the total number of the guided modes in selectively oxidized VCSELs with double oxide layers. The results agree very well with the reported measurements and are inversely proportional to the lateral index step.

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.

Si-based resonant-cavity-enhanced photodetector

Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300nm, The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5V is measured 10.2mA/W at 1285nm, and a full-width at half maximum of 25nm for the top-illumination RCE photodetector, and 19mA/W at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305nm with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.

Experimental study on tunable external cavity photodetectors

In this paper, an experiment on tunable resonant cavity enhanced (RCE) photodetector with external cavity is reported. It is the first time to realize a tunable RCE photodetector in China. A tuning range about 10 nm has been obtained and further extension is expected. Corresponding theoretical analysis and discussions are presented. (C) 2000 Elsevier Science B.V. All rights reserved.

Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser

The effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. The optimum conditions for stable oxidation were obtained. Two mechanisms of the oxidation process are revealed. One is the flow-controlling process, which is unstable. The other is the temperature-controlling process, which is stable. The stable region decreases for higher reaction temperatures. The simulation results for the stable oxidation region are also given. With optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved.

High electrical-to-green efficiency high stability intracavity-frequency-doubled Nd:YAG-LBO QCW 532 nm laser with a straight cavity

An electrical-to-green efficiency of more than 10% was demonstrated by intracavity-frequency-doubling a Q-switched diode-side-pumped Nd:YAG laser with a type II lithium triborate (LBO) crystal in a straight plano-concave cavity. An average power of 69.2 W at 532 nm was generated when electrical input power was 666 W. The corresponding electrical-to-green conversion efficiency is 10.4%. To the best of our knowledge, this is the highest electrical-to-green efficiency of second harmonic generation laser systems with side-pumped laser modules, ever reported. At about 66 W of green output power, the power fluctuation over 4 hours was better than +/-0.86%.

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region

A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.

Mechanism Responsible for the Complete Suppression of Karman Vortex in Flows Past a Wavy Square-Section Cylinder

The Karman vortex shedding is totally suppressed in flows past a wavy square-section cylinder at a Reynolds number of 100 and the wave steepness of 0.025. Such a phenomenon is illuminated by the numerical simulations. In the present study, the mechanism responsible for it is mainly attributed to the vertical vorticity. The geometric disturbance on the rear surface leads to the appearance of spanwise flow near the base. The specific vertical vorticity is generated on the rear surface and convecting into the near wake. The wake flow is recirculated with the appearance of the pair of recirculating cells. The interaction between the upper and lower shear layers is weakened by such cells, so that the vortex rolls could not be formed and the near wake flow becomes stable.

An untuned MA-loaded cavity for HIRFL-CSR

In order to realize high energy density physics and plasma physics research at HIRFL-CSR, a magnetic alloy (MA)-loaded cavity has been studied. According to the theoretical calculation and simulation for the MA-loaded cavity, we achieved a better result. The MA-loaded cavity had a higher Qf value, with a higher shunt impedance and a higher accelerating gradient. The accelerating gradient was about 95 kV/m at 1.8003 MHz, 130 kV/m at 0.9000 MHz. Compared with the ferrite-loaded cavities that are used at HIRFL-CSR, with about 10 kV/m accelerating gradient, the MA-loaded cavity obviously has an advantage. The results of the theoretical calculation and the simulation, which meet the design requirements are in good agreement.

突出电极对四杆型RFQ腔体并联阻抗及场平整性的影响；Influence of projecting electrodes on shunt impedance and flatness of 4-rod radiofrequency quadrupole cavity

中国科学院近代物理研究所正在进行等离子体直接注入方案的研究,以便为重离子物理研究提供稳定可靠的高流强束流。由于工作频率较低,用于等离子体直接注入方案的RFQ腔体采用了适合于低频的四杆型结构。在完成束流动力学设计的前提下,研究了RFQ腔体支撑臂的各参数对并联阻抗的影响。由于突出电极之间存在着一定大小的电容,会对腔体的性能产生影响,为使腔体达到最优化的设计,进行了突出电极对并联阻抗及场平整性的影响的研究,并给出了突出电极的取值范围。

Study of a magnetic alloy-loaded RF cavity for bunch compression at the CSR

The Heavy Ion Research Facility and Cooling Storage Ring (HIRFL-CSR) accelerator in Lanzhou offers a unique possibility for the generation of high density and short pulse heavy ion beams by non-adiabatic bunch compression longitudinally, which is implemented by a fast jump of the RF-voltage amplitude. For this purpose, an RF cavity with high electric field gradient loaded with Magnetic Alloy cores has been developed. The results show that the resonant frequency range of the single-gap RF cavity is from 1.13 MHz to 1.42 MHz, and a maximum RF voltage of 40 kV with a total length of 100 cm can be obtained, which can be used to compress heavy ion beams of U-238(72+) with 250 MeV/u from the initial bunch length of 200 ns to 50 ns with the coaction of the two single-gap RF cavity mentioned above.

Preliminary study of a niobium quarter-wave prototype cavity for a heavy-ion superconducting linac

Superconducting quarter-wave resonators, due to their compactness and their convenient shape for tuning and coupling, are very attractive for low-beta beam acceleration. In this paper, two types of cavities with different geometry have been numerically simulated: the first type with larger capacitive load in the beam line and the second type of lollipop-shape for 100 MHz, beta=0.06 beams; then the relative electromagnetic parameters and geometric sizes have been compared. It is found that the second type, whose structural design is optimized with the conical stem and shaping drift-tube, can support the better accelerating performance. At the end of the paper, some structural deformation effects on frequency shifts and appropriate solutions have been discussed.