Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser
| Data(s) |
1998
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| Resumo |
The effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. The optimum conditions for stable oxidation were obtained. Two mechanisms of the oxidation process are revealed. One is the flow-controlling process, which is unstable. The other is the temperature-controlling process, which is stable. The stable region decreases for higher reaction temperatures. The simulation results for the stable oxidation region are also given. With optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved. The effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. The optimum conditions for stable oxidation were obtained. Two mechanisms of the oxidation process are revealed. One is the flow-controlling process, which is unstable. The other is the temperature-controlling process, which is stable. The stable region decreases for higher reaction temperatures. The simulation results for the stable oxidation region are also given. With optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:36导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:36Z (GMT). No. of bitstreams: 1 3055.pdf: 477083 bytes, checksum: b7296acf1171c8e5d80aa637597a22d1 (MD5) Previous issue date: 1998 Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
JAPAN J APPLIED PHYSICS DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4-CHOME, MINATO-KU TOKYO, 105, JAPAN |
| Fonte |
Pan Z; Zhang Y; Du Y; Wu RH .Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser .见：JAPAN J APPLIED PHYSICS .JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37 (6B),DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4-CHOME, MINATO-KU TOKYO, 105, JAPAN ,1998,3673-3675 |
| Palavras-Chave | #半导体物理 #VCSEL #selective oxidation #stability #WET OXIDATION #MICROSTRUCTURE |
| Tipo |
会议论文 |
