边坡工程的极限分析上限法

Theory of limit analysis include upper bound theorem and lower bound theorem. To deal with slope stability analysis by limit analysis is to approximate the real solution from upper limit and lower limit. The most used method of limit analysis is upper bound theorem, therefore it is often applied to slope engineering in many cases. Although upper bound approach of limit analysis can keep away from vague constitutive relation and complex stress analyses, it also can obtain rigorous result. Assuming the critical surface is circular slip surface, two kinematically admissible velocity fields for perpendicular slice method and radial slice method can be established according to the limit analysis of upper bound theorem. By means of virtual work rate equation and strength reduction method, the upper-bound solution of limit analysis for homogeneous soil slope can be obtained. A log-spiral rotational failure mechanism for homogeneous slope is discussed from two different conditions which represent the position of shear crack passing the toe and below the toe. In the dissertition, the author also establishes a rotational failure mechanics with combination of different logarithmic spiral arcs. Furthermore, the calculation formula of upper bound solution for inhomogeneous soil slope stability problem can be deduced based on the upper bound approach of rigid elements. Through calculating the external work rate caused by soil nail, anti-slide pile, geotechnological grid and retaining wall, the upper bound solution of safety factor of soil nail structure slope, slip resistance of anti-slide pile, critical height of reinforced soil slope and active earth pressure of retaining wall can be obtained by upper bound limit analysis method. Taking accumulated body slope as subject investigated, with study on the limit analysis method to calculate slope safety factor, the kinematically admissible velocity fields of perpendicular slice method for slope with broken slip surface is proposed. Through calculating not only the energy dissipation rate produced in the broken slip surfaces and the vertical velocity discontinuity, but also the work rate produced by self-weight and external load, the upper bound solution of slope with broken slip surface is deduced. As a case study, the slope stability of the Sanmashan landslide in the area of the Three Gorges reservoir is analyzed. Based on the theory of limit analysis, the upper bound solution for rock slope with planar failure surface is obtained. By means of virtual work-rate equation, energy dissipation caused by dislocation of thin-layer and terrane can be calculated; furthermore, the formulas of safety factor for upper bound approach of limit analysis can be deduced. In the end, a new computational model of stability analysis for anchored rock slope is presented after taking into consideration the supporting effect of rock-bolts, the action of seismic force and fissure water pressure. By using the model, not only the external woke-rate done by self-weight, seismic force, fissure water pressure and anchorage force but also the internal energy dissipation produced in the slip surface and structural planes can be totally calculated. According to the condition of virtual work rate equation in limit state, the formula of safety factor for upper bound limit analysis can be deduced.

电离层参量M(3000)F2和hmF2的经验正交函数方法建模研究

The ionospheric parameter M(3000)F2 (the so-called transmission factor or the propagation factor) is important not only in practical applications such as frequency planning for radio-communication but also in ionospheric modeling. This parameter is strongly anti-correlated with the ionospheric F2-layer peak height hmF2，a parameter often used as a key anchor point in some widely used empirical models of the ionospheric electron density profile (e.g., in IRI and NeQuick models). Since hmF2 is not easy to obtain from measurements and M(3000)F2 can be routinely scaled from ionograms recorded by ionosonde/digisonde stations distributed globally and its data has been accumulated for a long history, usually the value of hmF2 is calculated from M(3000)F2 using the empirical formula connecting them. In practice, CCIR M(3000)F2 model is widely used to obtain M(3000)F2 value. However, recently some authors found that the CCIR M(3000)F2 model has remarkable discrepancies with the measured M(3000)F2, especially in low-latitude and equatorial regions. For this reason, the International Reference Ionosphere (IRI) research community proposes to improve or update the currently used CCIR M(3000)F2 model. Any efforts toward the improvement and updating of the current M(3000)F2 model or newly development of a global hmF2 model are encouraged. In this dissertation, an effort is made to construct the empirical models of M(3000)F2 and hmF2 based on the empirical orthogonal function (EOF) analysis combined with regression analysis method. The main results are as follows: 1. A single station model is constructed using monthly median hourly values of M(3000)F2 data observed at Wuhan Ionospheric Observatory during the years of 1957–1991 and compared with the IRI model. The result shows that EOF method is possible to use only a few orders of EOF components to represent most of the variance of the original data set. It is a powerful method for ionospheric modeling. 2. Using the values of M(3000)F2 observed by ionosondes distributed globally, data at grids uniformly distributed globally were obtained by using the Kriging interpolation method. Then the gridded data were decomposed into EOF components using two different coordinates: (1) geographical longitude and latitude; (2) modified dip (Modip) and local time. Based on the EOF decompositions of the gridded data under these two coordinates systems, two types of the global M(3000)F2 model are constructed. Statistical analysis showed that the two types of the constructed M(3000)F2 model have better agreement with the observational M(3000)F2 than the M(3000)F2 model currently used by IRI. The constructed models can represent the global variations of M(3000)F2 better. 3. The hmF2 data used to construct the hmF2 model were converted from the observed M(3000)F2 based on the empirical formula connecting them. We also constructed two types of the global hmF2 model using the similar method of modeling M(3000)F2. Statistical analysis showed that the prediction of our models is more accurate than the model of IRI. This demonstrated that using EOF analysis method to construct global model of hmF2 directly is feasible. The results in this thesis indicate that the modeling technique based on EOF expansion combined with regression analysis is very promising when used to construct the global models of M(3000)F2 and hmF2. It is worthwhile to investigate further and has the potential to be used to the global modeling of other ionospheric parameters.

On the unstable stacking criterion for ideal and cracked copper-crystals

The unstable stacking criteria for an ideal copper crystal under homogeneous shearing and for a cracked copper crystal under pure mode II loading are analysed. For the ideal crystal under homogeneous shearing, the unstable stacking energy gamma(us) defined by Rice in 1992 results from shear with no relaxation in the direction normal to the slip plane. For the relaxed shear configuration, the critical condition for unstable stacking does not correspond to the relative displacement Delta = b(p)/2, where b(p) is the Burgers vector magnitude of the Shockley partial dislocation, but to the maximum shear stress. Based on this result, the unstable stacking energy Gamma(us) is defined for the relaxed lattice. For the cracked crystal under pure mode II loading, the dislocation configuration corresponding to Delta = b(p)/2 is a stable state and no instability occurs during the process of dislocation nucleation. The instability takes place at approximately Delta = 3b(p)/4. An unstable stacking energy Pi(us) is defined which corresponds to the unstable stacking state at which the dislocation emission takes place. A molecular dynamics method is applied to study this in an atomistic model and the results verify the analysis above.

Tunable high-order harmonic generation and the role of the folded quantum path

We theoretically demonstrate the selective enhancement of high-order harmonic generation (HHG) in two-color laser fields consisting of a single-cycle fundamental wave (800 nm wavelength) and a multicycle subharmonic wave (2400 nm wavelength). By performing time-frequency analyses based on a single-active-electron model, we reveal that such an enhancement is a result of the modified electron trajectories in the two-color field. Furthermore, we show that selectively enhanced HHG gives rise to a bandwidth-controllable extreme ultraviolet supercontinuum in the plateau region, facilitating the generation of intense single isolated attosecond pulses.

Mg，Ti共掺Al2O3透明多晶陶瓷光谱性能研究

Transparent polycrystalline MgO and TiO2 codoped Al2O3 ceramics were fabricated by conventional solid-state pressureless processing. The absorption, emission and excitation spectra of ( Mg, Ti : Al2O3 ceramics were measured. Owing to charge compensation of Mg2+, only UV absorption around 250nm was observed due to O2- -> Ti4+ charge transfer transitions (CT) when Ti content was low. As a result, the emission peaks of isolated Ti4+ ion located at 280-290nm and 410-420nm were observed. Besides absorption peak of V, ion, the characteristic absorption peak of V, ion centered at 490nm was observed in Mg, Ti) : Al2O3 ceramics when Ti content was high. The emission spectra of Ti3+, ion in polycrystalline Al2O3 ceramics coincide with that of Ti: Al2O3 single crystal.

氧化铝透明陶瓷中Cr3+的发光性能

采用传统无压烧结工艺制备出透明性良好的掺Cr3+氧化铝陶瓷;测定了陶瓷的吸收光谱、发射光谱和激发光谱。结果表明,氧化铝陶瓷吸收峰与红宝石单晶一致,吸收截面大小与单晶相近;陶瓷中Cr3+离子所处格位的晶体场强较单晶弱,但其发射谱仍有较好的锐线发射;陶瓷中微量添加剂以及晶界的存在使得Al2O3晶胞发生畸变,造成其发射峰宽化。

全内反射式衍射光栅近场光学特性

利用傅里叶模式理论分析了具有高衍射效率的全内反射式衍射光栅在TE和TM偏振态下的近场光分布特点，讨论了光栅结构参数以及入射角度对光栅内电场增强的影响。结果表明：全内反射光栅内部电场分布对偏振态较敏感，光栅槽深和占宽比对电场增强影响较小，光栅内的峰值电场随光栅周期增大而增大，并且峰值电场随着入射角度的增大而减小。在应用于高功率激光时，降低光栅内部的电场增强可以有效降低损伤风险。

Effects of annealing on microstructure and optical properties of TiO2 sculptured thin films

The evolution of microstructure and optical properties of TiO2 sculptured thin films under thermal annealing is reported. XRD, field emission SEM, UV-Vis-NIR spectra are employed to characterize the microstructural and optical properties. It is found that the optimum annealing temperature for linear birefringence is 500 degrees C. The maximum of transmission difference for linear birefringence is up to 18%, which is more than twice of that in as-deposited thin films. In addition, the sample annealed at 500 degrees C has a minimum of column angle about 12 degrees C. The competitive process between the microstructural and optical properties is discussed in detail. Post-annealing is a useful method to improve the linear birefringence in sculptured thin films for practical applications.

Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers

AlInGaN quaternary epilayers with varying In mole fraction were investigated using triple-axis x-ray diffraction and photoluminescence measurements. The indium compositional fluctuation is enhanced with increasing In mole fraction, whereas the mosaicity of the AlInGaN epilayers is determined through the GaN template quality. Based on the analysis of the temperature dependence of the PL peak position, it is found that the localization effect strengthens with increasing In mole fraction due to the larger fluctuations of the In distribution. Increasing the influence of the localized state results in increasing the emission intensity and FWHM with the In content.

Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer

InAs quantum dots (QDs) were grown On Ultra-thin In0.15Ga0.85As strained layers by molecular beam epitaxy on GaAs (00 1) substrates. Combining reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy, we analyzed the stress field of dislocations in the strained layer/substrate interface. Specially, we revealed the relative position of QDs and dislocations. We found that the difference of the stress field around dislocations is prominent when the strained layer is ultra-thin and the stress field will directly affect the following growth. On the strained layer surface, In0.15Ga0.85As ridges will form at the inclined upside of dislocations. Then, InAs QDs will prefer nucleating on the ridges, there is relatively small stress between InAs and In0.15Ga0.85As. By selecting ultra-thin In0.15Ga0.85As layer (50 nm) and controlling the QD layer at just form QDs, we obtained ordered InAs QDs. (C) 2004 Elsevier B.V. All rights reserved.

Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate

Highly ordered AlN nanowire arrays were synthesized via a simple physical vapor deposition method on sapphire substrate. The nanowires have an extremely sharp tip < 10 nm, with the average length around 3 mu m. Raman spectroscopy analysis on the AlN nanowire arrays revealed that the lifetime of the phonons is shorter than that in bulk AlN. The transmission spectra of the AlN nanowires showed a blueshift similar to 0.27 eV at the absorption edge with that of the bulk AlN, which is closely related to the small size of the nanowires. (c) 2005 American Institute of Physics.

Calculation of energy levels in InGaAs/GaAs quantum dot array

The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 pm (5.90 pm) to 53.47 mu m (31.87 pm), respectively, and the transition wavelengths of E-C1 to E-HH1 red-shift from 1. 13 mu m (1.60 mu m) to 1.27 mu m (2.01 mu m), respectively.

Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs

We have carried out a theoretical study of double-delta-doped InAlAs/InGaAs/InP high electron mobility transistor (HEMT) by means of the finite differential method. The electronic states in the quantum well of the HEMT are calculated self-consistently. Instead of boundary conditions, initial conditions are used to solve the Poisson equation. The concentration of two-dimensional electron gas (2DEG) and its distribution in the HEMT have been obtained. By changing the doping density of upper and lower impurity layers we find that the 2DEG concentration confined in the channel is greatly affected by these two doping layers. But the electrons depleted by the Schottky contact are hardly affected by the lower impurity layer. It is only related to the doping density of upper impurity layer. This means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. Considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be 5 x 10(12) and 3 x 10(12) cm(-2) for the upper and lower impurity layers, respectively, in the double-delta-doped InAlAs/InGaAs/InP HEMTs.

Photoinduced spin alignment of the magnetic ions in (Ga,Mn)As

Time-resolved Kerr rotation measurement in the (Ga,Mn)As diluted magnetic semiconductor allows direct observation of the dynamical properties of the spin system of the magnetic ions and the spin-polarized holes. Experimental results show that the magnetic ions can be aligned by the polarized holes, and the time scales of spin alignment and relaxation take place in tens and hundreds of picoseconds, respectively. The Larmor frequency and effective g factor obtained in the Voigt geometry show an unusual temperature dependence in the vicinity of the Curie temperature due to the exchange coupling between the photoexcited holes and magnetic ions. Such a spin coherent precession can be amplified or destructed by two sequential excitation pulses with circularly copolarized or oppositely polarized helicity, respectively. (c) 2006 American Institute of Physics.