Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate


Autoria(s): Zhao Q; Zhang HZ; Xu XY; Wang Z; Xu J; Yu DP; Li GH; Su FH
Data(s)

2005

Resumo

Highly ordered AlN nanowire arrays were synthesized via a simple physical vapor deposition method on sapphire substrate. The nanowires have an extremely sharp tip < 10 nm, with the average length around 3 mu m. Raman spectroscopy analysis on the AlN nanowire arrays revealed that the lifetime of the phonons is shorter than that in bulk AlN. The transmission spectra of the AlN nanowires showed a blueshift similar to 0.27 eV at the absorption edge with that of the bulk AlN, which is closely related to the small size of the nanowires. (c) 2005 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/8696

http://www.irgrid.ac.cn/handle/1471x/63878

Idioma(s)

英语

Fonte

Zhao, Q; Zhang, HZ; Xu, XY; Wang, Z; Xu, J; Yu, DP; Li, GH; Su, FH .Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate ,APPLIED PHYSICS LETTERS,MAY 9 2005,86 (19):Art.No.193101

Palavras-Chave #半导体物理 #FIELD-EMISSION PROPERTIES
Tipo

期刊论文