Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(111) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free GaN film with advanced optical and crystal properties. (c) 2005 Elsevier B.V. All rights reserved.

High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)

A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.

MOCVD growth of high quality crack-free GaN on Si(III) substrates

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.

Crack Patterns in Ceramic Plates after Quenching

The crack patterns generated in a real ceramic plate and in a plate stacked by ceramic slabs under quenching are experimentally studied. The results here reveal that there are some distinct differences between the two crack patterns. The reasons that caused the differences are the size and boundary effects of the slabs. These crack patterns are very useful to understand the failure mechanisms of ceramic materials in thermal shock.

The influence of tip performance on scanning probe lithography

Scanning probe lithography (SPL), employing the tip of an atomic force microscope to mechanically pattern various materials in nanoscale region has provided a simple but significant method for making nanostructures. We use this technique for the lithography of several kinds of substrate surfaces. The tip performance has been found to be a crucial factor in the lithographic process. Four types of cantilevers are employed in nanolithography, including standard silicon nitride (DNP), tapping mode(TM) etched silicon (TESP(W)), uncoated silicon cantilever (NSC21/50) and conductive platinum/iridium-coated probe. Results demonstrate that tips with smaller spring constants can not be used for physically scribing and nanomanipulating in our experiment. The possible mechanism of our experiment is discussed.

Facilitated ion transfer across the micro-liquid /liquid interface supported at the tip of a silanized micropipette

Glass micropipettes with silanized inner walls can be filled with an organic solvent for voltammetric measurements in an aqueous solution. This arrangement was employed to investigate systematically the mechanism of facilitated potassium ion transfer by an ionophore dibenzo-18-crown-6 (DB18C6) across a micro-water/1.2-dichloroethane(W/DCE) interface supported at the tip of a silanized micropipette. Our experimental results verify that this facilitated ion transfer across the liquid/liquid interface did occur by an interfacial complexation-dissociation process (TIC-TID mechanism). The ratio of the diffusion coefficient of DB18C6 to that of its complexed ion in the DCE phase was calculated to be 1.74 +/- 0.07.

The deformation mechanism of polyphenylquinoxaline films

The plateau modulus of polyphenylquinoxaline (PPQ-E) films has been obtained by from their dynamic mechanical properties curves. Using these data, the entanglement density of PPQ-E films, 2.37 X 10(26) m(-3) Or 0.39mmol/cm(3),has been estimated. The deformation mechanism of polyphenylquinoxaline (crazing mechanism,or shear yielding mechanism, or both), can be predicted according to entanglement density values. The changes in morphology of PPQ-E films during tensile deformation have been observed by Polarized Light Microscope. The result shows that crazing first appears in the tensile process, then shear yielding appears. It needs to point out that the craze is terminated by micro-shear band and the direction of craze in shear band is also changed,which prevents the craze growth into crack and avoid the failure of material. This result is in accordance with the prediction on the basis of the entanglement density data. The morphology and structure of crazes in PPB-E thin film have been determined by TEM. The craze morphology of PPQ-E is mainly fibril craze consisting of micro-fibrils and micro-voids,the interface between bulk and craze is distinct. Multiply crazes, blunting of craze tip and shear deformation zone are also observed. This result reflects the accordance of entanglement density and the morphology and structure of crazes.

Recent development of tip modification techniques in chemical force microscope

A review is given on the recent development of scanning probe microscope (SPM) tip modification techniques for chemical force microscope, including the preparation and application of SPM tip modified by self-assembled monolayer, atomic force microscope (AFM) tip modified by biological molecule, scanning tunneling microscope tip modified by electrochemical method, AFM tip modified by carbon nanotube.

Tip-induced dynamic characterization of multilayers and variable morphologies of cytochrome c molecules on highly oriented pyrolytic graphite revealed by in-situ scanning tunnelling microscopy

The dynamic states of cytochrome c multilayers on electrochemically pretreated highly oriented pyrolytic graphite (HOPG) have been studied by in-situ scanning tunnelling microscopy (STM) under potential control of both the tip and the substrate in cytochrome c and phosphate buffer solution. The dynamic characterization of cytochrome c multilayers and relatively stable adsorbed single cytochrome c molecules scattered on HOPG imply that physically adsorbed multilayers were more easily influenced by the STM tip than those of chemically adsorbed single molecules. In-situ STM images of chemically adsorbed cytochrome c molecules with discernible internal structures on HOPG revealed that morphologies of cytochrome c molecules also suffered tip influence; possible tip-sample-substrate interactions have been discussed.

COMPARISON OF THE CRACK-GROWTH METHOD AND THE CRACK STRESS WHITENING ZONE METHOD FOR THE FRACTURE-TOUGHNESS DETERMINATION OF PHENOLPHTHALEIN POLY(ETHER KETONE)

Fracture toughness values of phenolphthalein poly(ether ketone) (PEK-C) at 190 degrees C were determined by two different methods, i. e. the conventional crack growth method and the crack stress whitening zone method, which show consistent results. This indicates that the crack stress whitening zone method can be used to determine the crack initiation of some polymers for which the blunting line concept is unsuitable.

Tectonics of the southern tip of the Parece Vela Basin, Philippine Sea Plate

We report new geophysical and petrological data collected at the southern tip of the Parece Vela Basin in the Philippine Sea. The Parece Vela Basin, which was formed as a backarc basin behind proto Mariana arc-trench system from late Oligocene to middle Miocene, provides us a good opportunity to study the nature of successive backarc basin formations in the Philippine Sea and the relationship between are and backarc magmatisms. Regional bathymetric map derived from satellite altimetry shows that the southern tip of the basin, now located just west of the Yap arc-trench system, has unique morphological and tectonic features which include: 1) the absence of spreading center or its trace, 2) shallow average depth, and 3) enigmatic curved structures. Our newly collected high-resolution bathymetric data reveal that the spreading fabric similar to the central Parece Vela Basin exists to the north of 9 degrees 20'N. Thus it appears that the present-day Yap arc and backarc region represent the western half of the seafloor that was produced by the early E-W and the following NE-SW spreading in the northern and central Parece Vela Basin, and that the eastern counterpart now lies west of the West Mariana Ridge. Unlike the northern Parece Vela Basin, there appears to be no evidence for a systematic propagation of spreading center in the southern part. Instead two rift segments, one which extends from the central Parece Vela Basin and the other which lies within the western remnant arc (Kyushu-Palau Ridge), overlap at the southern tip of the basin, producing a complex seafloor that includes curvilinear deeps and deformed topographic highs. (c) 2007 Elsevier B.V. All rights reserved.