RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI

We report fundamental changes of the radiative recombination in a wide range of n-type and p-type GaAs after diffusion with the group-I element Li. These optical properties are found to be a bulk property and closely related to the electrical conductivity of the samples. In the Li-doped samples the radiative recombination is characterized by emissions with excitation-dependent peak positions which shift to lower energies with increasing degree of compensation and concentration of Li. These properties are shown to be in qualitative agreement with fluctuations of the electrostatic potential in strongly compensated systems. For Li-diffusion temperatures above 700-800-degrees-C semi-insulating conditions with electrical resistivity exceeding 10(7) OMEGA cm are obtained for all conducting starting materials. In this heavy Li-doping regime, the simple model of fluctuating potentials is shown to be inadequate for explaining the. experimental observations unless the number of charged impurities is reduced through complexing with Li. For samples doped with low concentrations of Li, on the other hand, the photoluminescence properties are found to be characteristic of impurity-related emissions.

LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS

We report lithium passivation of the shallow acceptors Zn and Cd in p-type GaAs which we attribute to the formation of neutral Li-Zn and Li-Cd complexes. Similar to hydrogen, another group-I element, lithium strongly reduces the concentration of free holes when introduced into p-type GaAs. The passivation is inferred from an increase of both the hole mobility and the resisitivity throughout the bulk of the sample. It is observed most clearly for Li concentrations comparable to the shallow-acceptor concentration. In addition, compensation of shallow acceptors by randomly distributed donors is present in varying degree in the Li-diffused samples. Unlike hydrogenation of n-type GaAs, Li doping shows no evidence of neutralizing shallow donors in GaAs.

SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS

It is shown that Li diffusion of GaAs can give rise to semi-insulating samples with electrical resistivity as high as 10(7) OMEGAcm in undoped, n-type, and p-type starting materials. The optical properties of the compensated samples are correlated with the depletion of free carriers caused by the Li diffusion. The radiative recombination of the Li-compensated samples is dominated by emissions with excitation-dependent peak positions that shift to lower energies with increasing compensation. The photoluminescence properties are characteristic of fluctuations of the electrostatic potential in strongly doped, compensated crystals.

ON THE FORMATION OF THE SBGA HETEROANTISITE IN METALORGANIC VAPOR-PHASE EPITAXIAL GAAS-SB

Metalorganic vapor-phase epitaxial growth of GaAs doped with isovalent Sb is reported. By increasing the trimethylantimony concentration during growth the total Sb concentration was varied between 1 X 10(17)-1 X 10(19) cm-3. A new deep level defect with an activation energy of the thermal emission rates of E(c) - 0.54 eV is observed. The defect concentration increases with increasing As partial pressure and with increasing Sb doping. It is also found that the EL2 concentration decreases with increasing Sb doping. The new energy level is suggested to be the 0/ + transition of the Sb(Ga) heteroantisite defect. No photocapacitance quenching effect, reflecting a metastable state as seen for EL2 (As(Ga)), is observed for Sb(Ga).

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长

报道了用低压金属有机物化学气相淀积(LP-MOCVD)方法外延生长InGaAsP/InP应变补偿多量子阱结构。用此材料制备的掩埋异质结(BH)条形结构多量子阱激光器具有极低阈值电流4～6mA。20～40℃时特征温度T_0高达67K，室温下外量子效率为0.3mW/mA。

低阈值1.3μm InGaAsP/InP应变补偿多量子阱DFB激光器LP-MOCVD生长

报道了用低压－金属有机化学气相淀积(LP-MOCVD)方法制作1.3μm应变补偿多量子阱结构材料。X射线双晶衍射摇摆曲线可清晰地看到±4级卫星峰和卫星峰间的Pendellosong条纹。整个有源区的平均应变量几乎为零。用掩埋异质结(BH)条形工艺制备的含一级光栅的DFB激光器室温下阈值电流2～4mA,外量子效率0.33mW/mA,线性输出光功率达30mW,边模抑制比(SMSR)大于35dB。20～40℃下的特征温度T_0为67K。

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Metal-semiconductor-metal (MSM) structures were fabricated by RF-plasma-assisted MBE using different buffer layer structures. One type of buffer structure consists of an AlN high-temperature buffer layer (HTBL) and a GaN intermediate temperature buffer layer (ITBL), another buffer structure consists of just a single A IN HTBL. Systematic measurements in the flicker noise and deep level transient Fourier spectroscopy (DLTFS) measurements were used to characterize the defect properties in the films. Both the noise and DLTFS measurements indicate improved properties for devices fabricated with the use of ITBL and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (C) 2003 Elsevier Ltd. All rights reserved.

Photoluminescence from carbon nanotubes

We observed yellow colored light emission bands from multiwalled carbon nanotubes in photo-luminescence (PL) experiments. The light emission band features indicate that the PL bands are associated with the electronic properties inherent to the carbon nanotube (CNT) structures.

模拟酸雨对马尾松菌根影响研究

本实验表明：外生菌根真菌彩色豆马勃、劣味乳菇、丝膜菌对PH的适应范围较广，最适生长BH呈酸性。模拟酸雨对马尾松幼苗菌根的外部形态和内部结构有明显影响。在温室栽培中，模拟酸雨（PH2.0）显著抑制菌根侵染率，在田间实验中，对菌根侵染率有一定的影响。菌根PH和土壤PH值随模拟酸雨PH下降而逐渐降低，接种菌根菌可略提高菌根PH和土壤PH值。菌根真菌过氧化氢酶对培养基中PH的变化不敏感，模拟酸雨对菌根过氧化氢酶活性影响也不明显。但沙培中，模拟酸雨（PH2.0）显著抑制菌根过氧化氢酶活性。模拟酸雨（PH2.0）显著刺激菌根过氧化物酶活性，接种菌根菌可以降低菌根过氧化物酶活性。不同PH的培养基对菌体硝酸还原酶活性有明显影响，而且菌体生长速度与硝酸还原酶活性呈正相关。模拟酸雨（PH2.0）显著抑制菌根硝酸还原酶活性，而接种菌根菌明显提高根系硝酸还原酶活性。菌体酸性磷酸酶活性对培养基中PH变化不敏感，同样菌根酸性磷酸酶活性对模拟酸雨的影响也不明显，但是接种菌根菌可明显提高根系酸性磷酸酶活性。模拟酸雨对马尾松幼苗茎的高生长影响不显著。但是对幼苗茎、根系的干重和侧根总长度有显著抑制作用。轻度酸雨（PH4.5-3.0）对马尾松幼苗生长有促进作用，接种菌可提高幼苗生长。从菌根形态结构和生理活性上看，接种菌根菌可减轻模拟酸雨对马尾松幼苗根系的危害，增强对模拟酸雨的抗性。4dThe result of experiment showed that ectomycorrhizal fungi Pisolithus tinctorins. Lactarius insulsus. Cortinarius russus can be growth in broad PH rang in pure culture, the optimum growth PH is acidity. The external morphology and internal structure of ectomycorrhiza of P. massoniana are affected with simulated acid rain. In greenhouse, simulated acid rain (PH2.0) treatment caused significant decrease in the percent infection, but it's not marked in field. The PH of mycorrhizal and soil are reduced with reducing rainfall PH. These PH are slight higher for inoculation with ectomycorrhizal fungi. Catalase activity of ectomycorrhizal fungus is not sensitive to medium with different PH. Mycorrhiza catalase activiyt is not affected significantly with simulated acid rain, but it's inhibited significantly with simulated acid rain (PH2.0) in the sand culture. Peroxidase atcivity of mycorrhiza is enhanced significantly with simulated acid rain (PH2.0), but it's universally lower for inoculation with ectomycorrhizal fungus. Ectomycorrhizal fungus nitrate reductase activity is affected significantly to medium with differdnt PH, the rates of these fungi growth and nitrate reductase activity is significant correlation. Nitrate reductase activity of mycorrhiza is inhibited significantly with simulated acid rain (PH 2.0), but it's increased significantly for inocnlation with mycorrhizal fungi. Ectomycorrhizal fungas acid phosphatase activity is not affected to medium with different PH, Mycorrhiza acid phosphatase activity is not affected with simulated acid rain too, the acid phosphatase activity of roots inoculated with mycorrhizal fungas is increased significantly. The highest acidity level simulated rain reduced signhficantly root system biomass and the dry weight of stem. Iower acidity level simulated rain can stimulated the growth of P. massoniana, the growth of seedling inocnlated with mycorrhizal fungus can be increased.

Indentation of power law creep solids by self-similar indenters

For creep solids obeying the power law under tension proposed by Tabor, namely sigma = b(epsilon) over dot(m), it has been established through dimensional analysis that for self-similar indenters the load F versus indentation depth h can be expressed as F(t) = bh(2)(t)[(h) over dot(t)/h(t)](m)Pi(alpha) where the dimensionless factor Pi(alpha) depends on material parameters such as m and the indenter geometry. In this article, we show that by generalizing the Tabor power law to the general three dimensional case on the basis of isotropy, this factor can be calculated so that indentation test can be used to determine the material parameters b and m appearing in the original power law. Hence indentation test can replace tension test. This could be a distinct advantage for materials that come in the form of thin films, coatings or otherwise available only in small amounts. To facilitate application values of this constant are given in tabulated form for a range of material parameters. (C) 2010 Elsevier B.V. All rights reserved.