INFLUENCE OF IN CONTENT ON DEFECTS OF LPE GAAS EPILAYERS

Autoria(s): YANG BH; WANG ZG; HE HJ; LIN LY
Data(s)

1990
Identificador

http://ir.semi.ac.cn/handle/172111/14367

http://www.irgrid.ac.cn/handle/1471x/101218
Idioma(s)

英语
Fonte

YANG BH; WANG ZG; HE HJ; LIN LY.INFLUENCE OF IN CONTENT ON DEFECTS OF LPE GAAS EPILAYERS,JOURNAL OF CRYSTAL GROWTH ,1990,103(0):371-379
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital