A COMMON-CAVITY 2-SECTION INGAASP/INP BISTABLE LASER WITH A LOW OPTICAL SWITCHING POWER

The characteristics of the steady-state and the transient response to external light excitation of a common-cavity two-section (CCTS) bistable semiconductor laser is investigated. The results on the relation of light output versus light input, the wavelength match, optical amplification and optical switching are presented. Experimental results are compared to the results of a computer simulation.

One-Dimensional InP-Based Photonic Crystal Quantum Cascade Laser Emitting at 5.36μm

An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithography instead of electron beam lithography and using inductively coupled plasma etching, four-period air-semiconductor couples are defined as Bragg reflectors at one end of the resonator. The spectral measurement at 80K shows the quasi-continuous-wave operation with the wavelength of 5.36μm for a 22μm-wide and 2mm-long epilayer-up bonded device.

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser

A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror with low temperature method and surface state method combined absorber is presented.With which passive Kerr lens mode locking of Ti∶Al2O3 laser pumped by argon ion laser is realized,which produces pulses as short as 40fs.The spectrum bandwidth is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.

A Novel Two-Section Co-Cavity Wavelength Tunable Semiconductor Laser

于2010-11-23批量导入

Single steady frequency and narrow line width external cavity semiconductor laser

A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10(-3)degreesC by temperature control system. The experiments have been carried out and the results obtained-the spectral fine width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.

Real-time far distance micro-vibration measurement using an external cavity semiconductor laser interferometer with a feedback control system

An external cavity semiconductor laser interferometer used to measure far distance micro-vibration in real time is proposed. In the interferometer, a single longitudinal mode and excellent coherent characteristic grating external cavity semiconductor laser is constructed and acted as a light source and a phase compensator. Its coherent length exceeds 200 meters. The angle between normal and incidence beam of the far object is allowed to change in definite range during the measurement with this interferometer, and this makes the far distance interference measurement easier and more convenient. Also, it is not required to keep the amplitudes of the first and second harmonic components equal, and then the dynamic range is increased. A feedback control system is used to compensate the phase disturbance between the two interference beams introduced by environmental vibration.

High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers

980nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers,vitta novel large optical cavity and asymmetrical claddings was fabricated bg MOCVD. Very high differential quantum efficiency elf 90% (1.15W/A) and low vertical divergence angle of 24 degrees at long cavity length were obtained for 100 mu m stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 mu m.

Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region

A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.