Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃

The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UHV/CVD system at relative low temperature of 500℃. Si1-xGex layers were in a metastable state in this case. 10-period strained 3.0 nm- Si0.5Ge0.5/3.4 nm- Si multi quantum wells were obtained directly on Si substrate. Raman Measurement, high resolution electron microscopy and photoluminescence were used to characterize the structural and optical properties. It is found that such relative thick Si0.5Ge0.5/Si multi quantum wells are still near planar and free of dislocations, that makes it exploit applications to electrical and optical devices.

The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

Evaporation of Ethanol Drops on a Heated Substrate Under Microgravity Conditions

We present in this paper results obtained from a parabolic flight campaign regarding ethanol sessile drop evaporation under reduced gravity conditions. Drops are created using a syringe pump by means of injection through a PTFE (polytetrafluoroethylene) substrate. The drops are recorded using a video camera and an infrared camera to observe the thermal motion inside the drop and on the heating substrate. The experimental set-up presented in this paper enables the simultaneous visualization and access to the heat flux density that is transferred to the drop using a heat flux meter placed between the heating block and the PTFE substrate. We evidence original thermal spreading phenomena during the ethanol drop creation on a heated PTFE substrate. The drop exhibits specific behaviour which is discussed here. This work is performed in the frame of a French-Chinese collaboration (project IMPACHT) for future experiments in a Chinese scientific satellite.

Effect of substrate and annealing on the structural and optical properties of ZnO:Al films

ZnO:Al thin films with c-axis preferred orientation were deposited on glass and Si substrates using RF magnetron sputtering technique. The effect of substrate on the structural and optical properties of ZnO:Al films were investigated. The results showed a strong blue peak from glass-substrate ZnO:Al film whose intensity became weak when deposited on Si substrate. However, the full width at half maxima (FWHM) of the Si-substrate ZnO:Al (0 0 2) peaks decreased evidently and the grain size increased. Finally, we discussed the influence of annealing temperature on the structural and optical properties of Si-substrate ZnO:Al films. After annealing, the crystal quality of Si-substrate ZnO:Al thin films was markedly improved and the intensity of blue peak (similar to 445 nm) increased noticeably. This observation may indicate that the visible emission properties of the ZnO:Al films are dependent more on the film crystallinity than on the film stoichiometry. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Effect of diffusion barrier on the high-temperature oxidation behavior of thermal barrier coatings

A selective oxidation technique has been applied to form a diffusion barrier on the Ni-based superalloy substrate by heating the substrate with electron beam of the electron beam-physical vapor deposition (EB-PVD) facility. The interdiffusion behavior, cross-sectional morphology, isothermal and cyclic oxidations were studied for thermal barrier coatings (TBCs) with and without diffusion barrier.

Electrolytic Deposition and Diffusion of Lithium onto Magnesium-9 Wt Pct Yttrium Bulk Alloy in Low-Temperature Molten Salt of Lithium Chloride and Potassium Chloride

The electrolytic deposition and diffusion of lithium onto bulk magnesium-9 wt pct yttrium alloy cathode in molten salt of 47 wt pct lithium chloride and 53 wt pct potassium chloride at 693 K were investigated. Results show that magnesium-yttrium-lithium ternary alloys are formed on the surface of the cathodes, and a penetration depth of 642 mu m is acquired after 2 hours of electrolysis at the cathodic current density of 0.06 A center dot cm(-2). The diffusion of lithium results in a great amount of precipitates in the lithium containing layer. These precipitates are the compound of Mg41Y5, which arrange along the grain boundaries and hinder the diffusion of lithium, and solid solution of yttrium in magnesium. The grain boundaries and the twins of the magnesium-9 wt pct yttrium substrate also have negative effects on the diffusion of lithium.

Dewetting of polymethyl methacrylate on the patterned elastomer substrate by solvent vapor treatment

The dewetting evolution process of polymethyl methacrylate (PMMA) film on the flat and prepatterned polydimethylsiloxane (PDMS) substrates (with square microwells) by the saturated solvent of methyl ethyl ketone (MEK) treatment has been investigated at room temperature by the optical microscope (OM) and atomic force microscope (AFM). The final dewetting on the flat PDMS substrate led to polygonal liquid droplets, similar to that by temperature annealing. However, on the patterned PDMS substrate, depending on the microwells' structure of PDMS substrate and defect positions that initiated the rupture and dewetting of PMMA, two different kinds of dewetting phenomena, one initiated around the edge of the microwells and another initiated outside the microwells, were observed. The forming mechanism of these two different dewetting phenomena has been discussed. The microwells were filled with liquid droplets of PMMA after dewetting due to the formation of fingers caused by the pinning of the three-phase-line at the edge of the microwells and their rupture.

Effects of bridge ions, DNA species, and developing temperature on flat-lying DNA monolayers

Recently, we have successfully constructed flat-lying DNA monolayers on a mica surface (J. Phys. Chem. B 2006, 110, 10792-10798). In this work, the effects of various factors including bridge ions, DNA species, and developing temperature on the configuration of DNA monolayers have been investigated by atomic force microscopy (AFM) in detail. AFM results show that the species of bridge ions and developing temperature play a crucial role during the formation process. For example, the divalent cation Zn2+ resulted in many DNA chains stuck side by side in the monolayers due to the strong interactions between it and DNA's bases or the mica surface. Most DNA chain's conglutinations disappeared when the developing temperature was higher than 40 degrees C. Cd2+ and Ca2+ produced more compact DNA monolayers with some obvious aggregations, especially for the DNA monolayers constructed by using Ca2+ as the bridge ion. Co2+ produced well-ordered, flat-lying DNA monolayers similar to that of Mg2+. Furthermore, it was found that the flat-lying DNA monolayers could still form on a mica surface when plasmid DNA pBR 322 and linear DNA pBR 322/Pst I were used as the DNA source. Whereas, it was hard to form DNA monolayers on a (3-aminopropyl)triethoxysilane-mica surface because the strong interactions between DNA and substrate prevented the lateral movement of DNA molecules.

Ordered droplet formation by thin polymer film dewetting on a stripe-patterned substrate

The dewetting process of thin polystyrene (PS) film on flat and stripe-patterned substrates is presented. Different dewetting processes were observed when the thin PS films annealed at above the glass transition temperature on these different kinds of substrates. The final dewetting on the flat substrate led to formation of polygonal liquid droplets, while on the stripe-patterned substrate, the droplets were observed to align at the centers of the stripes. A possible explanation for the dewetting process on the stripe-patterned substrate is proposed.

Photoluminescence of aggregated C-60 in nano-size at room temperature

When the aggregation of C-60 is arranged in mono-dispersed state on the ITO substrate, the photoluminescence (PL) spectra are observed clearly. These emission peaks are attributed to recombination of self - trapped excitons, the zero-phonon exciton (R-0) and its phonon replicas.

Critical crystallization temperature for the occurrence of epitaxy between high-density polyethylene and isotactic polypropylene

The crystallization behavior of high-density polyethylene (HDPE) on highly oriented isotactic polypropylene (iPP) at elevated temperatures (e.g., from 125 to 128 degrees C), was studied using transmission electron microscopy and electron diffraction. The results show that epitaxial crystallization of HDPE on the highly oriented iPP substrates occurs only in a thin layer which is in direct contact with the iPP substrate, when the HDPE is crystallized from the melt on the oriented iPP substrates at 125 degrees C. The critical layer thickness of the epitaxially crystallized HDPE is not more than 30 nm when the HDPE is isothermally crystallized on the oriented iPP substrates at 125 degrees C. When the crystallization temperature is above 125 degrees C, the HDPE crystallizes in the form of crystalline aggregates and a few individual crystalline lamellae. But both the crystalline aggregates and the individual crystalline lamellae have no epitaxial orientation relationship with the iPP substrate. This means that there exists a critical crystallization temperature for the occurrence of epitaxial crystallization of HDPE on the melt-drawn oriented iPP substrates (i.e., 125 degrees C). (C) 1997 John Wiley & Sons, Inc.

Metabolism of polychaete Neanthes japonica Izuka: relations to temperature, salinity and body weight

Polychaete Neanthes japonica is a species geographically specific in China and Japan with important scientific implication and commercial value. In this study, the relations of body weight, salinity and temperature to oxygen consumption and ammonia excretion of N. japonica were determined. Three different groups in body weight (large: 2.34 +/- 0.36 g, middle: 1.50 +/- 0.21 g and small: 0.62 +/- 0.12 g) were set for all experiments. Results show that the body weight is negatively related to the rates of oxygen consumption and ammonia excretion; and the relationship is significant. The oxygen consumption and ammonia excretion at 24A degrees C decreased at salinity from 5 to 30 and increased above 30, indicating that both lower and higher salinity are adverse and certain degree of salinity stress is necessary for enhancing the energy demand. At salinity 30, rising temperature from 18A degrees C to 30A degrees C, the oxygen consumption increased before 27A degrees C and then decreased. However, the relation of ammonia excretion and temperature seems more complex. Two-way ANOVA shows that salinity, temperature and body weight all have a significant effect on the oxygen consumption and ammonia excretion of the worm. Moreover, interaction between salinity/temperature and body weight is also significant. O:N (oxygen/nitrogen) ratio varies greatly in this case from 5.97 to 463.22, indicating that N. japonica can regulate the type of metabolic substrate against environment changes.