Ta/NiFe/Cu/NiFe/FeMn/Ta自旋阀多层膜中Cu的层间偏聚及其对磁性的影响

实验结果表明Ta/NiFe/FeMn/Ta多层膜的交换耦合场Hex要大于Ta/NiFe/Cu /NiFe/FeMn/Ta自旋阀多层膜中的Hex. 为了寻找其原因, 用X射线光电子能谱(XPS)研究了Ta(12 nm)/NiFe(7 nm), Ta(12 nm)/NiFe(7 nm)/Cu(4 nm)和Ta(12 nm)/NiFe(7 nm)/ Cu(3 nm)/NiFe(5 nm) 3种样品, 研究结果表明前两种样品表面无任何来自下层的元素偏聚, 但在第3种样品最上层的NiFe表面上, 探测到从下层偏聚上来的Cu原子. 认为: Cu在NiFe/FeMn层间的存在是Ta/NiFe/Cu/NiFe/FeMn/Ta自旋阀多层膜的Hex低于Ta/NiFe/FeMn/Ta多层膜Hex的一个重要原因.

蓝宝石上硅膜（SOS）肖特基结注入电流检测的电子自旋共振及Si/Al2O3界面缺陷

国家自然科学基金

The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.

Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.

Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si

In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si/gamma-Al2O3/Si. First, single crystalline gamma-Al2O3 (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si/gamma-Al2O3 (100)/Si(100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si/gamma-Al2O3 (100)/Si(100) has been fabricated successfully and can be used for application of MOS device.

Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.

Cu污染胁迫植物幼苗体内敏感生物标记物的筛选

本文以石英砂和土壤为培养介质，将AFLP分子标记技术和传统分析方法结合研究了Cu在不同胁迫阶段及胁迫水平对大麦和玉米两种植物种子发芽和幼苗形态、生理及DNA损伤的毒性效应，并在此基础上，比较和分析了两种植物对Cu胁迫的敏感性及不同测试指标对Cu胁迫响应的敏感性，进而筛选对Cu胁迫响应敏感的生物标记物；明确了植物对Cu的吸收能力大小与其对Cu胁迫响应敏感性之间的关系。研究结果如下： 发芽实验和生长实验结果均表明玉米对Cu胁迫相应的敏感性稍高于大麦。 对于发芽试验，两种受试植物根伸长对Cu胁迫响应的敏感度均高于发芽率。 对于幼苗生长实验，两种受试植物在两种培养介质下，根长、根系内可溶性蛋白含量及AFLP图谱变化均对Cu胁迫表现出较高的敏感性，其中AFLP图谱的多态性变化对Cu胁迫响应最为敏感，可用于土壤Cu污染的早期诊断。大麦和玉米幼苗生长对Cu胁迫响应的敏感性高于种子发芽对胁迫的敏感性。 土壤对重金属的毒性效应具有很强的缓冲效应，使得Cu在土壤中的毒性显著变小，土壤中Cu含量与植株体内的Cu含量之间呈现明显的剂量－效应关系；玉米对Cu的吸收利用能力较大麦强,因此对Cu胁迫响应的敏感性稍高于大麦。 AFLP图谱多态性变化对Cu胁迫响应的敏感性高于其他指标，但实现其在污染土壤生态毒理诊断中的应用，还需进一步的实验对其重复性予以证明。 关键词 Cu、生物标记物、DNA损伤、AFLP

Cd、Cu污染胁迫对拟南芥幼苗错配修复相关基因表达的影响

土壤重金属污染问题已成为影响我国持续农业和生态环境质量的重要因素，引起了人们的广泛关注。由于传统污染诊断方法的缺点，急需建立土壤污染生态毒理学诊断方法，生物标记物技术则是其中的研究热点之一。本文采用营养液培养的方法，以模式植物拟南芥为试材，采用半定量反转录聚合酶链式反应（RT-PCR）技术，结合传统分析方法研究了Cd、Cu在不同胁迫水平下对拟南芥幼苗的形态、生理及分子水平的毒性效应，并在此基础上，比较和分析不同测试指标对Cd、Cu胁迫响应的敏感性，进而筛选对Cd、Cu胁迫响应敏感的生物标记物。主要结果如下： 1 不同浓度Cd和Cu污染胁迫下，拟南芥幼苗生长均受到不同程度的影响 幼苗初生根伸长均受到明显抑制，而地上部叶片数、地上部鲜重却没有显著的变化。重金属首先作用于植物的根系，根系的生长对胁迫响应的敏感性高于地上部。 2 幼苗地上部的可溶性蛋白含量受到不同程度干扰，而在不同浓度的Cd、 Cu处理下，叶绿素含量变化不明显，表明幼苗地上部可溶性蛋白质含量对胁迫的敏感性高于叶绿素含量的变化。 3 幼苗地上部错配修复（MMR）和增殖细胞核抗原（PCNA）基因都明显 地出现了表达诱导或表达抑制，表明MMR和PCNA基因表达的变化对Cd、Cu胁迫表现出较高的敏感性。 4 幼苗地上部的可溶性蛋白质含量及幼苗地上部MMR和PCNA基因表达 均对Cd和Cu污染胁迫具有较高的敏感性，两者均可用于指示Cd和Cu污染的敏感生物标记物。基因表达变化图谱虽然对污染胁迫响应比较敏感，是一种污染胁迫响应敏感的生物标记物，但其在生态毒理诊断中的应用还需进一步的实验对其予以证明。

Cd、Pb、Cu、Zn和As在草甸棕壤中垂直迁移规律的研究

本文运用土柱淋溶试验，研究了不同条件下Cd、Pb、Cu、Zn和As等五种重金属元素在草甸棕壤中垂直迁移的规律。试验表明，一般情况下各重金属元素向下迁移的深度不超过10cm，绝大部分还是滞留在表层污染土中，因此在本试验条件下不会因淋溶迁移而导致地下水的污染。从不同重金属元素的迁移情况来看，Cd和Zn的迁移能力较强，Cu、Pb和As的迁移能力较弱。随着土壤pH值降低，Cd、Pb、Cu和Zn的迁移加强，As的迁移减弱。加大淋溶水量，能促进各种重金属离子随土壤水溶液的迁移。在供试浓度下，各重金属元素对水稻的生长没有危害，但对紫花苜蓿的生长却有影响，水稻籽实（或糙米）和紫花苜蓿茎叶中各重金属元素的含量都有增加，甚至超标。土壤施用石灰，能抑制各重金属元素在草甸棕壤中的迁移及被作物的吸收，是降低土壤重金属污染危害的一个有效措施。但是利用施加腐殖酸来防治土壤重金属污染往往会因造成土壤pH值下降、增加某些重金属的可溶性而遭失败。试验还表明，Cd、Pb、Cu和Zn的迁移在酸雨条件下会加剧，但As的迁移仅在弱酸性酸雨条件下增加，强酸性酸雨反而抑制As的迁移。

土壤－植物系统中Cd、Cu和石油烃复合污染效应与机理研究

本研究模拟在Cd、Cu和石油烃复合污染条件上对水稻的生态效应，探讨污染物在土壤－－植物系统中迁移转化规律、污染物间的交互作用关系及其机制。结果表明：Cu与石油烃及Cd与石油烃对水稻的生态效应表明它们之间均存在拮抗作用，Cd、Cu和石油烃三者之间也存在拮抗作用，Cd与Cu之间在低浓度时表现为拮抗作用，而在高浓度时则表现为协同作用。污染物浓度是影响污染物间交互作用关系的重要因子。