Some new observation on the formation and optical properties of CdS clusters in zeolite-Y

CdS clusters in zeolite-Y have been prepared by the exchange of Cd2+ into the zeolite following by sulfurization with Na2S in solution. Blue-shifts from the bulk caused by quantum size effect and the change of absorption upon CdS loading are observed. Two absorption bands are detected for one of the sample and are assigned to the 1s-1s band and exciton transition, respectively. The exciton feature is more pronounced in the excitation spectrum than in the absorption spectrum, and the luminescence excited at the exciton band is stronger than that at the 1s-1s band. Copyright (C) 1996 Elsevier Science Ltd

Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs

The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It has recently been shown that the photosensitivity (measured under 1.25 eV illumination) of the local vibrational mode absorption induced by some deep defect centers in SI-GaAs is a consequence of the electron and hole photoionizations of EL2. This paper directly measures the kinetics of the electronic transition associated with EL2 under 1.25 eV illumination, which implies the expected charge transfer among different charge states of the EL2 center. A calculation based on a simple rate equation model is in good agreement with the experimental results.

Study of intensity-dependent nonlinear optical coefficients of GaP optical crystal at 800 nm by femtosecond pump-probe experiment

The intensity-dependent two-photon absorption and nonlinear refraction coefficients of GaP optical crystal at 800 nm were measured with time-resolved femtosecond pump-probe technique. A nonlinear refraction coefficient of 1.7*10^(-17) m2/W and a two-photon absorption coefficient of 1.5*10^(-12) m/W of GaP crystal were obtained at a pump intensity of 3.5*10^(12) W/m2. The nonlinear refraction coefficient saturates at 3.5*10^(12) W/m2, while the two-photon absorption coefficient keeps linear increase at 6*10^(12) W/m2. Furthermore, fifth-order nonlinear refraction of the GaP optical crystal was revealed to occur above pump intensity of 3.5*10^(12) W/m2.

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector （DBR） was realized just by selectively wet etching the multiquantum-well （MQW） layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback （DFB） laser was integrated with an electro-absorption modulator （EAM）, which was capable of producing 20 dB of optical extinction.

Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix

Structural dependence on annealing of a-SiOx:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513-519cm(-1) after 1170 degreesC annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980cm(-1) of Si-O-Si stretching vibration at 1085cm(-1) in infrared spectra imply that except that SiO2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesC. This sub-oxide phase is located at the interface between Si crystallites and SiO2, and thus support the shell model for the mixed structures of Si grains and SiO2 matrix.

Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

We fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (> 40dB) and low capacitance (C <0.6pF) which can achieve an ultra-high frequency(> 10GHz). The device is be used in 10Gbps optical time division multiplex (OTDM) system as a signal generator.

Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures

We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.

Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters

Intersubband absorption energy shifts in 3-level system stemming from depolarization and excitonlike effects are investigated. Analytically, the expressions we derive present good explanations to the conventional 2-level results and bare potential transition energy results; and numerical results show that they are more exact than the previous studies to describe the 3-level system depolarization and excitonlike shift (DES) character especially for higher carrier density (more than 8 x 10(11) cm(-2)). One interesting detail we find is that the "large blue" DES becomes "slight redshift" in the low doping limit (less than 1.9 x 10(11) cm(-2)), which may be neglected by the previous studies of intersubband transitions. Temperature character of DES in the step well structure is also numerically studied. Finally the above are applied to calculate asymmetric step quantum well structures. The two main functional aspects of terahertz (THz) emitters are discussed and several basic optimizing conditions are considered. By adjusting the well geometry parameters and material composition systematically, some optimized structures which satisfy all of the six conditions are recommended in tables. These optimizations may provide useful references to the design of 3-level-based optically pumping THz emitters.

Linear and nonlinear optical properties of the PbSe quantum dots doped germane-silica glass optical fiber

We report development of a new fiber doped with PbSe quantum dots for nonlinear optical applications. PbSe quantum dots related absorption peaks were obtained at 1021, 1093 and 1351 nm. The resonant optical nonlinearity and attenuation at 1500 nm were measured to be 9.4 × 10−16 m2/W and 0.01 dB/m, respectively. The emission around 1540 nm was observed upon near resonant pumping at 1064 nm.

Preparation and Optical Properties of Gold Nanowire Arrays

Gold nanowires with diameters (d) between,15 run and 200 urn and with length/diameter ratio of 700 were prepared in ion-track templates with electrode position method. The morphology and crystal structure of the gold nanowires were Studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The 200 nm (d) gold nanowires preferred orientation along the [100] direction were formed at the deposition voltage of 1.5 V (Without reference electrode). The optical properties of gold nanowire arrays embedded in ion-track templates were studied by UV-Vis spectrophotometer. There was a strong absorption peak at 539 nm for 45 nm (d) gold nanowire arrays. With the diameter of gold nanowires increasing, the absorption peak shifted to the longer wavelength. At last, the result was discussed combined with surface plasmon resonance of gold nanoparticles.

Controlled synthesis and diameter-dependent optical properties of Cu nanowire arrays

Using electrochemical deposition, Cu nanowire arrays have been successfully fabricated by home-made polycarbonate ion-track templates. The diameters were well controlled by etching time of templates. The minimum diameter is 15 nm. The morphologies and structures were analyzed by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. The wires prefer [1 1 0] growth direction due to H ions absorption. The optical properties of Cu nanowire arrays are studied by an ultraviolet/visible/near-infrared spectrophotometer. Two extinction peaks were observed in spectra. The optical mechanism is discussed based on surface plasmon resonance

Time-dependent density-functional calculations for optical spectra of Na-2 and Na-4 clusters

With the frame of the time-dependent local density approximation, an efficient description of the optical response of clusters has been used to study the photo-absorption cross section of Na-2 and Na-4 clusters. It is shown that our calculated results are in good agreement with the experiment. In addition, our calculated spectrum for the Na-4 cluster is in better agreement with experiment than the GW absorption spectrum.

The optical properties and the natural lifetime calculation of a Sm(III) complex

The photophysical properties of the complex Sm(PM)(3)(TP)(2) [PM = 1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone, TP = triphenyl phosphine oxide] are determined in crystal state, and energy transfer process is modeled for ligands to center Sm(III) ion. The characteristic luminescence of Sm(III) is sensitized by PM and TP, and most of transitions from excited state (4)G(5/2) of Sm3+ are detected.

Solvothermal synthesis of well-dispersed MF2 (M = Ca, Sr, Ba) nanocrystals and their optical properties

MF2 (M = Ca, Sr, Ba) nanocrystals (NCs) were synthesized via a solvothermal process in the presence of oleic acid and characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared (FT-IR) spectra, UV/vis absorption spectra, photoluminescence (PL) excitation and emission spectra, and lifetimes, respectively. In the synthetic process, oleic acid as a surfactant played a crucial role in confining the growth and solubility of the MF2 NCs. The as-prepared CaF2, SrF2 and BaF2 NCs present morphologies of truncated octahedron, cube and sheet in a narrow distribution, respectively.