刻槽硅衬底上的GaAs/AlGaAs超晶格衬材料的微结构特性

于2010-11-23批量导入

交叉电场和磁场下GaAs/AlGaAs超晶格子带结构

于2010-11-23批量导入

GaAs/AlGaAs多量子阱结构的光吸收谱和横向光电流谱

国家自然科学基金

关于AlGaAs:Si中DX中心的新观点

于2010-11-23批量导入

GaAs/AlGaAs梯度折射率分别限制单量子阱结构中的光增益谱分析

于2010-11-23批量导入

CCTS结构GaAs/AlGaAs单量子阱双稳态激光器

于2010-11-23批量导入

GaAs/AlGaAs量子阱的输运特性

于2010-11-23批量导入

空间生长GaAs单晶做衬底的GaAs/AlGaAs DH激光器

国家自然科学基金

GaAs/AlGaAs多量子阱激光器

于2010-11-23批量导入

Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.