7.8μm二级分布反馈量子级联激光器

报道了基于应变补偿的InP基In0.53+xGa0.47-xAs/In0.52-yAl0.48+yAs分布反馈量子级联激光器.采用二级光栅作为反馈,激射工作波长为7.8μm,在1%占空比,5kHz频率的工作条件下,在93～173K的温度范围内,单模发射光谱边模抑制比均超过20dB,调谐系数dλ/dT=0.5125nm/K.在93K时,峰值功率为30mW,直到153K时,峰值光功率仍达到12mW.

分子束外延生长的InAs/GaAs自组织量子点发光特性

研究了分子束外延生长的覆盖了1nm的InxAl1-xAs(x=0.2,O.3)和3nm的Ino2Gao8As复合应力缓冲层InAs/GaAs自组织量子点(QD)光致发光(PL)特性.加InAlAs层后PL谱红移到1.33μm,室温下基态和第一激发态间的跃迁能级差增加到86meV.高In组份的InAlAs有利于获得较长波长和较窄的半高宽(FWHM).对于覆盖复合应力缓冲层的QD不会使波长和FWHM发生显著变化,但可以使基态和第一激发态间的能级差进一步增大.这些结果归因于InAlAs能够有效的抑制In的偏析,减少应力,使QD保持较高的高度.同时,由于InAlAs具有较高的限制势垒,可以增加基态和第一激发态间的能级差.

利用GaAs基上InGaAs应变层制备有序排列的InAs量子点

在GaAs基In x Ga1-xAs( x =0.15)应变层上生长了InAs 量子点(QD)层,通过分析各层之间的应力状况和位错的演变过程,配合生长过程中对反射式高能电子衍射仪(RHEED)实时监测,并观察生长后的表面形貌,发现可以通过控制应变层厚度来控制应变层表面布纹结构的宽度,而且在应变层厚度低于位错增殖的临界厚度时布纹宽度较窄.如果同时控制QD层在刚刚出点,则QD主要沿着较窄的布纹结构排列,从而得到有序排列的QD.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

Controllable growth of semiconductor nanometer structures

Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alignment on InP(001) is discussed. (C) 2003 Elsevier Science Ltd. All rights reserved.

镓的成矿作用及其在峨眉山大火成岩省中的成矿效应

评述了分散元素镓的应用和成矿作用的研究现状并剖析了镓的成矿研究存在的主要问题。论证了铝土矿床中的镓主要赋存于其中的一水硬铝石且以GaO（OH）形式存在；以晶体化学理论分析，认为中高温热液条件形成的闪锌矿（主要包括铁闪锌矿、黑闪锌矿及富铜铅锌矿中的闪锌矿）是Ca的富集载体，Ca最可能以GaAs、GaxIn1-xAs和三元硫化物M^IGaS2（M^I=T1，Cu，Ag）分子的形式赋存，并可能于后期温度降低的条件下以单矿物（如硫镓铜矿）析出；镓在岩浆岩中的主要富集载体为长石类矿物、尖晶石型矿物以及具反尖晶石型结构的磁铁矿。对峨眉山大火成岩省中的重要矿床类型—攀枝花式超大型钒钛磁铁矿矿床中的代表性矿石进行镓含量分析并阐述了该类型矿床中Ca的成矿效应，初步评估了攀西地区钒钛磁铁矿工业储量中伴生的镓为34．8万t，远景资源量为43．5万t，认为该区超大型钒钛磁铁矿矿床亦属超大型镓矿床，具潜在的重要经济价值。呼吁加强对我国磁铁矿矿床中镓的成矿效应及综合利用的系统研究。