LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS

We report lithium passivation of the shallow acceptors Zn and Cd in p-type GaAs which we attribute to the formation of neutral Li-Zn and Li-Cd complexes. Similar to hydrogen, another group-I element, lithium strongly reduces the concentration of free holes when introduced into p-type GaAs. The passivation is inferred from an increase of both the hole mobility and the resisitivity throughout the bulk of the sample. It is observed most clearly for Li concentrations comparable to the shallow-acceptor concentration. In addition, compensation of shallow acceptors by randomly distributed donors is present in varying degree in the Li-diffused samples. Unlike hydrogenation of n-type GaAs, Li doping shows no evidence of neutralizing shallow donors in GaAs.

Ni基电极淀积前后表面处理对p-GaN欧姆接触的影响

在p-GaN上蒸发Ni/Au电极前,采用王水、HCl、缓冲HF进行前表面处理,O_2气氛下退火后,比较各电极样品的I-V特性和表面形貌.结果显示无表面处理时接触电阻最小,且溶剂处理后残留的电解质会影响电极的电流特性和稳定性.用俄歇电子能谱(AES)测试不同元素随深度分布情况,发现高温退火过程中NiO的形成有自动清洁p-GaN表面的作用,因此对于Ni基电极前表面处理不是必需的.再将样品用10%草酸溶液处理,其I-V特性显示接触电阻率明显下降;X射线光电子能谱(XPS)测试显示草酸溶液处理后电极表面Ni含量显著减少,而Au元素信号峰增强,说明表面高阻P型NiO被有效除去,对改善接触性能具有实际意义.

NiO removal of Ni/Au Ohmic contact to p-GaN after annealing

The Ni/Au contact was treated with oxalic acid after annealing in O_2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.

Zn杂质扩散诱导AlGaInP/GaInP量子阱混杂

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口,提高大功率半导体激光器的输出功率。以Zn_3As_2为扩散源,采用闭管扩散方式,在550℃下对650nm半导体激光器的外延片进行了一系列Zn杂质扩散诱导量子阱混杂的实验。实验发现,随着扩散时间从20～120min,样品光致发光(PL)谱蓝移偏移增加,峰值波长蓝移53nm;当扩散时间超过60min后,样品的PL谱中不仅出现了常见的蓝移峰,同时还出现了红移峰,峰值波长红移32nm。分析表明PL谱蓝移来自Zn扩散引起的AlGaInP/GaInP间的量子阱混杂;红移来自Zn杂质扩散对样品中Ga_(0.51)In_(0.49)P缓冲层的影响。还研究了扩散温度(550℃)和扩散时间对样品晶体品质的影响,并在理论上计算了AlGaInP/GaInP量子阱混杂中的Al-Ga的互扩散系数。

Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition

High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.

High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

Investigation on Fe, Mn, Zn, Cu, Pb and Cd fractions in the natural surface coatings sampled and surficial sediments collected in the Songhua River, China

Natural surface coatings sampled (NSCSs) from the surface of shingles and surficial sediments (SSs) in the Songhua River, China were employed to investigate the similarities and difference in fractions of heavy metals (Fe, Mn, Zn, Cu, Pb, and Cd) between NSCSs and SSs using the modified sequential extraction procedure (MSEP). The results show that the differences between NSCSs and SSs in Fe fractions were insignificant and Fe was dominantly present as residual phase (76.22% for NSCSs and 80.88% for SSs) and Fe-oxides phase (20.33% for NSCSs and 16.15% for SSs). Significant variation of Mn distribution patterns between NSCSs and SSs was observed with Mn in NSCSs mainly present in Mn-oxides phase (48.27%) and that in SSs present as residual phase (45.44%). Zn, Cu, Pb and Cd were found dominantly in residual fractions (>48%), and next in solid oxides/hydroxides for Zn, Pb and Cd and in easily oxidizable solids/compounds form for Cu, respectively. The heavy metal distribution pattern implied that Fe/Mn oxides both in NSCSs and SSs were more important sinks for binding and adsorption of Zn, Pb and Cd than organic matter (OM), and inversely, higher affinity of Cu to OM than Fe/Mn oxides in NSCSs and SSs was obtained. Meanwhile, it was found that the distributions of heavy metals in NSCSs and SSs were similar to each other and the pseudo-total concentrations of Zn, Cu, Pb and Cd in NSCSs were greater than those in SSs, highlighting the more importance for NSCSs than SSs in controlling behaviours of heavy metals in aquatic environments.

掺P、B对纳米Zn-O薄膜电学特性的影响

现在普遍采用ITO薄膜(In_2O_3:Sn)作为太阳电池的窗口材料，但由于In资源的稀缺，使太阳能电池的成本增加。Zn-O是一种低成本材料，具有良好的电学、光学特性，因此可代替ITO薄膜作为窗口材料。由于ZnO/n-Si异质结太阳电池的转化效率为6.9%～8.5%，而ITO光电转换效率为12%～15%，采用液态源掺杂方法，取得较好效果，证实了掺P、B对纳米ZnO薄膜提高导电性是有效的。本文利用扫描俄歇探针等手段研究分析了掺P、B随热处理温度的变化对纳米Zn-O薄膜电学特性的影响。在研制过程中，对掺入P、B的纳米Zn薄膜，曾采用X射线衍射议进行分析，其结果未见P、B。

Ni?莫来石界面反应的XPS研究

国家自然科学基金

Pt-Ni/p-InP低阻欧姆接触的机理研究

利用X射线衍射和AES(俄歇)方法，深入地研究了RF磁探溅射淀积的Pt-Ni/p-InP(100)非合金膜系在热退火过程中Pt和Ni与衬底InP中的In和P形成稳定化合物的行为，揭示了比接触电阻降低于3×10~(-6)Ω·cm~2的根本原因。