Synthesis, structural characterization and electrical property of new oxide ion conductors: La3MMo2O12 (M = In, Ga and Al)

New series of oxides, La3MMo2O12 (M = In, Ga and Al), have been prepared by the solid-state reaction. The composition and elemental distribution were analyzed by the energy-dispersive X-ray (EDX) analysis. As determined by the X-ray diffraction (XRD), these compounds have similar crystal structures that can be indexed on a monoclinic cell at room temperature. AC impedance spectra and the DC electrical conductivity measurements in various atmospheres indicate that they are oxide ion conductors with ionic conductivities between 10(-2) and 10(-3) S/cm at 800 degrees C. The conductivity decreases in the order of La3GaMo2O12 > La3AlMo2O12 > La3InMo2O12, implying that the effect of cell volume and polarization associated with In3+, Ga3+ and Al3+ play an important role in the anion transport of these materials. The reversible phase transition was observed in all these compounds as confirmed by the differential thermal analysis (DTA) and dilatometric measurements.

Synthesis and characterization of a novel hybrid single crystal [Ga-3(PO4)(3)F-2]H3O center dot (H3NCH2CH2)(2)NH2

A novel three-dimensional fluorinated gallium phosphate has been hydrothermally,synthesized by using diethylenetriamine as an organic structure-directing agent. X-ray single crystal structure analysis indicates this compound crystallizes in the orthorhombic space group P-bca, a = 1. 605 6 (7) nm, b = 1.011 4 (4) nm, c=1. 854 6(5) nm, V=3. 011 6(19) nm(3), Z=4. The three-dimensional framework based on linkage of corner-sharing polyhedron PO4, GaO4F and GaO4F2 delimit ten-ring channels along b axis in which the triply protonated amines are located serving as charge compensating guests and supporters.

熔盐电解制备Ga-Nd合金的研究

Ga-Nd合金对磁性材料及半导体材料的研制是非常有用的。本文详细地研究了采用低熔点的镓作为阴极,从KCl-NdCl_3熔盐中电解制备廉价Ga-Nd合金的工艺条件。 本研究采用KCl-NdCl_3熔盐体系进行电解。KCl为分析纯。NdCl_3由Nd_2O_3(>99.99％)加过量NH_4Cl混合后,在大瓷蒸发皿中于350℃进行搅拌反应,直至产物完全溶于水。用滴定法确定原料中NdCl_3的含量。以金属镓作阴极(纯度为99.99wt％),阴

氯化物熔盐中Nd~(3+)在液体Ga电极上还原的电化学行为

本文利用循环V-A法(CV)研究了Nd~(3+)在液体Ga电极上还原的电化学反应动力学。结果表明,Nd~(3+)在Ga电极上的还原是分步进行的。第一步在较高的电位扫描速度下为扩散控制的可逆电荷传递反应,即Nd~(3+)+e?Nd~(2+);在电位扫描速度较低时,随后的化学反应为第一步反应的控制步骤,即Nd~(3+)+e?快Nd~(2+)+mCl→慢NdCl_m~(2-m)。第二步为不可逆的电荷传递反应,即沉积的金属Nd与Ga合金化,Nd~(2+)+2e→Nd(Ga)。估算了该反应的标准反应速度常数为7.0×10~(-3)cm/s。

具有不完全微分的Fuzzy-GA PID控制器及其在智能仿生人工腿中的应用

以模糊推理和遗传算法为基础，提出了一种新的具有不完全微分的最优PID控制器的设计方法，该控制器由离线和在线两部分组成，在离线部分，以系统响应的超调量、上升时间以及调整时间为性能指标，利用遗传算法搜索出一组最优的PID参数Kp^*、Ti^*和Td^*，作为在线部分调整的初始值，在在线部分，一个专用的PID参数优化程序以离线部分获得Kp^*、Ti^*和Td^*为基础，根据系统当前的误差e和误差变化率e^.，通过一个模糊推理系统在线调整系统瞬态响应的PID参数，以确保系统的响应具有最优的动态和稳态性能．该控制器已被用来控制由作者设计的智能仿生人工腿中的执行电机．计算机仿真结果表明，该控制器具有良好的控制性能和鲁棒性能。

资源受限单机动态调度的并行GA算法研究

研究资源受限系统动态调度问题,针对时序约束问题提出一种并行遗传算法(PGA)。给出满足排序优先次序约束的一种基因编码方法;采用不破坏优先级可行性的交叉操作,并予以证明;建立一种并行处理机制,使搜索避免出现局优现象。在技术允许情况下,单机动态调度引入抢占式加工方式,会一定程度上提高系统的性能。通过仿真试验验证,并行GA算法可兼顾优化效果和计算效率,解决单机动态调度问题。

扬子地块西南缘铅锌矿床Cd、Ge与Ga富集规律初步研究

扬子地块西南缘分布着大量富含Cd、Ge与Ga的铅锌矿床，已成为我国Pb、Zn及Cd、Ge与Ga矿产资源的重要生产基地。对代表性铅锌矿床进行野外地质调查和系统采样鉴定后．应用电子探针微区分析手段，研究主要矿石矿物闪锌矿、方铅矿和黄铁矿中分散元素的富集特征。结果显示．各类矿床中闪锌矿均相对富集Cd，方铅矿富集Ge与Ga，而黄铁矿中Cd、Ge与Ga的富集系数均相对较低．未呈现出选择性富集的趋势；赋存于震旦纪一寒武纪地层且以脉状、网脉状产出的矿体中闪锌矿的Cd含量明显高于赋存于晚古生代并以层状产出的矿体中闪锌矿的Cd含量。

Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance- voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

液体金属吸附促进位错发射的分子动力学研究

结果表明，Al吸附Ga后可使发现位错的临界应力强度因子从K_(Ie)=0.5MPam~(1/2)降为K_(Ie)(L)=0.4Mpam~(1/2)；对Cu则从K_(Ie)=0.55MPam~(1/2)降为K_(Ie)(L)=0.45MPam~(1/2)，即Ga吸附后能促进位错的发现。另外，吸附Ga之后裂尖前方容易产生空位团及Frank位错。

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

Mn implanted GaAs by low energy ion beam deposition

High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

室温铁磁性半导体Mn_xGa_(1-x)Sb

采用离子注入、离子沉积及后期退火方法制备了稀磁半导体单晶Mn_xGa_(1-x)Sb，在室温下（300 K）获得了单晶的磁滞回线。用X射线衍射方法分析了铁磁性半导体单晶Mn_xGa_(1-x)Sb的结构，用电化学C-V法分析了单晶的载流子浓度分布。由X射线衍射得知，Mn_xGa_(1-x)Sb中Mn含量逐渐由近表面处的x = 0.09下降到晶片内部的x = 0。电化学C-V测得单晶的空穴浓度高达1 * 10~(21)cm~(-3)，表明Mn_xGa_(1-x)Sb单晶中大部分Mn原子占据Ga位，起受主作用。

微重力条件下开口矩形容器的小Pr热毛细对流

采用数值方法研究了微重力条件下开口矩形容器内小Prandtl数镓(Ga)熔体生长过程中定常热毛细对流，讨论了Re数、几何纵横比A和侧壁外加温差的相对高度H对熔体内温度场和流场分布的影响。计算结果表明，热毛细对流对熔体温度分布有明显的影响，从而影响着晶体生长过程。自由面两侧温度差很小(如0.1K)时，熔体内温度场将发生变化；当温度差增加即Re数增加时，热毛细对流加强，对流和扩散相互作用导致温度场分布更加不均匀。无论多小的H值，若自由面存在温差，都会驱动热毛细对流；随着H值增加，热毛细对流会扩展到整个熔区。几何纵横比A对熔体内温度场和流场也有影响，当A比较大时，在固/液界面附近扩散起主导作用。