Structural and Optical Performance of GaN Thick Film Grown by HVPE

Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum（FWHM）of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.

Integrated MMI Optical Couplers and Optical Switches in Silicon-on-Insulator Technology

Integrated multimode interference (MMI) coupler based on silicon-on-insulator(SOI) has been becoming a kind of more and more attractive device in optical systems. SiO2thin cladding layers (＜1.0 μm) can be usedin SOI waveguide due to the large index step be-tween Si and SiO2, making them compatible with VLSI technology. The design and fabrica-tion of MMI optical couplers and optical switches in SOI technology are presented in thepa-per. We demonstrated the switching time of 2 × 2 MMI-MZI thermo-optical switch is less than 20 μs:

Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.

Electronic structure and optical property of semiconductor nanocrystallites

Semiconductor nanostructures show many special physical properties associated with quantum confinement effects, and have many applications in the opto-electronic and microelectronic fields. However, it is difficult to calculate their electronic states by the ordinary plane wave or linear combination of atomic orbital methods. In this paper, we review some of our works in this field, including semiconductor clusters, self-assembled quantum dots, and diluted magnetic semiconductor quantum dots. In semiconductor clusters we introduce energy bands and effective-mass Hamiltonian of wurtzite structure semiconductors, electronic structures and optical properties of spherical clusters, ellipsoidal clusters, and nanowires. In self-assembled quantum dots we introduce electronic structures and transport properties of quantum rings and quantum dots, and resonant tunneling of 3-dimensional quantum dots. In diluted magnetic semiconductor quantum dots we introduce magnetic-optical properties, and magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot. (C) 2004 Elsevier B.V. All rights reserved.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Magnetic and optical properties of cobalt nanowires fabricated in polycarbonate ion-track templates

Submitted by CAS-IR

Preparation and Optical Properties of Gold Nanowire Arrays

Gold nanowires with diameters (d) between,15 run and 200 urn and with length/diameter ratio of 700 were prepared in ion-track templates with electrode position method. The morphology and crystal structure of the gold nanowires were Studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The 200 nm (d) gold nanowires preferred orientation along the [100] direction were formed at the deposition voltage of 1.5 V (Without reference electrode). The optical properties of gold nanowire arrays embedded in ion-track templates were studied by UV-Vis spectrophotometer. There was a strong absorption peak at 539 nm for 45 nm (d) gold nanowire arrays. With the diameter of gold nanowires increasing, the absorption peak shifted to the longer wavelength. At last, the result was discussed combined with surface plasmon resonance of gold nanoparticles.

Structural and optical properties of 6H-SiC helium-implanted at 600 K

Single crystals of 6H-SiC were implanted at 600 K with 100 key He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473 K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3 x 10(16) He+/cm(2), extended defects are created by thermal annealing to 1473 K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si-C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing. (C) 2010 Elsevier B.V. All rights reserved.

Effect of substrate and annealing on the structural and optical properties of ZnO:Al films

ZnO:Al thin films with c-axis preferred orientation were deposited on glass and Si substrates using RF magnetron sputtering technique. The effect of substrate on the structural and optical properties of ZnO:Al films were investigated. The results showed a strong blue peak from glass-substrate ZnO:Al film whose intensity became weak when deposited on Si substrate. However, the full width at half maxima (FWHM) of the Si-substrate ZnO:Al (0 0 2) peaks decreased evidently and the grain size increased. Finally, we discussed the influence of annealing temperature on the structural and optical properties of Si-substrate ZnO:Al films. After annealing, the crystal quality of Si-substrate ZnO:Al thin films was markedly improved and the intensity of blue peak (similar to 445 nm) increased noticeably. This observation may indicate that the visible emission properties of the ZnO:Al films are dependent more on the film crystallinity than on the film stoichiometry. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Influence of Inter-Fiber Spacing and Interfacial Adhesion on Failure of Multi-Fiber Model Composites: Experiment and Numerical Analysis

The uniaxial tension experiments on glass-fiber-reinforced epoxy matrix composites reveal that the fragmentations of fibers display vertically aligned fracture, clustered fracture, coordinated fracture, and random fracture with the increase of inter-fiber spacing. The finite element analysis indicates that the fragmentations of fibers displaying different phenomena are due to the stress concentration as well as the inherent randomness of fiber defects, which is the dominant factor. The experimental results show that matrices adjacent to the fiber breakpoints all exhibit birefringent-whitening patterns for the composites with different interfacial adhesion strengths. The larger the extent of the interfacial debonding, the less the domain of the birefringent-whitening patterns. The numerical analysis indicates that the orientation of the matrix adjacent to a fiber breakpoint is caused by the interfacial shear stress, resulting in the birefringent-whitening patterns. The area of shear stress concentrations decides on the domain of the birefringent-whitening patterns.

Synthesis, structure, and optical properties of a contorted (110)-oriented layered hybrid perovskite: C3H11SN3PbBr4

The < 110 >-oriented perovskite is very rare in the hybrid perovskites family. In this work, an unusual layered < 110 >-oriented hybrid perovskite, which is stabilized by a special organic ligand, 2-(aminoethyl)isothiourea, has been obtained. This ligand combines a primary amine and a formamidine on the two ends of one molecule. Introduction of the special ligand brings about contorted inorganic sheets in the hybrid perovskite structure. The optical properties of the new < 110 >-oriented perovskite were studied.