Electronic structures of T-shaped quantum wires

In this paper, we propose the periodic boundary condition which can be applied to a variety of semiconductor nanostructures to overcome che difficulty of solving Schrodinger equation under the natural boundary condition. When the barrier width is large enough. the average of the maximum and minimum of energy band under the periodic boundary condition is very close to the energy level obtained under the natural boundary condition. As an example, we take the GaAs/Ga1-xAlxAs system, If the width of the Ga1-xAlxAs barrier is 200 Angstrom, the average of the maximum and minimum of energy band of the GaAs/Ga1-xAlxAs superlattices is very close to the energy level of the GaAs/Ga1-xAlxAs quantum wells (QWs). We give the electronic structure effective mass calculation of T-shaped quantum wires (T-QWRs) under the periodic boundary condition, The lateral confinement energies E1D-2D of electrons and holes, the energy difference between T-QWRs and QWs, are precisely determined.

Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface

We report on high magnetic fields (up to 40 T) cyclotron resonance, quantum Hall effect and Shubnikov-de-Hass measurements in high frequency transistors based on Si-doped GaN-AlGaN heterojunctions. A simple way of precise modelling of the cyclotron absorption in these heterojunctions is presented, We clearly establish two-dimensional electrons to be the dominant conducting carriers and determine precisely their in-plane effective mass to be 0.230 +/- 0.005 of the free electron effective mass. The increase of the effective mass with an increase of two-dimensional carrier density is observed and explained by the nonparabolicity effect. (C) 1997 American Institute of Physics.

Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well

The magnetotransport properties of the two-dimensional (2D) electron gas confined in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well structure were studied at temperatures down to 0.35 K in magnetic fields up to 7.5 T. Well resolved 2D Shubnikovde Haas (SdH) oscillations were observed, although the conductivity of the sample in the as grown state was dominated by a bulk parallel conduction layer. After removing most of the parallel conduction layer by wet chemical etching the amplitude and number of SdH oscillations increased. From the temperature dependence of the amplitude the effective mass of the electrons was estimated as 0.17 m(0). Copyright (C) 1996 Published by Elsevier Science Ltd

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN

The electronic properties of wide-energy gap zinc-blende structure GaN, A1N, and their alloys Ga(1-x)A1(x)N are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained for GaN and AIN, respectively. The energies of Gamma, X, L conduction valleys of Ga(1-x)A1(x)N alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (C) 1995 American Institute of Physics.

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN

The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained. The energies of Gamma, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.

DETERMINATION OF THE X-CONDUCTION-SUBBAND ENERGIES IN TYPE-II GAAS/ALAS/GAAS QUANTUM-WELL BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the X conduction-subband energy levels in an AlAs well sandwiched by double GaAs layers were determined. Calculation gives eight subbands in the well with well width of 50 Angstrom. Among them, five levels and the other three remainders are determined by using the large longitudinal electron effective mass m(1)(1.1m(0)) and transverse electron effective mass m(t)(0.19m(0)) at X valley, respectively. Two subbands with the height energies were hardly detectable and the other six ones with lower energies are active in the present DLTS study. Because these six subbands are close to each other, we divided them into three groups. Experimentally, we observed three signals induced from the three groups. A good agreement between the calculation and experiment was obtained. (C) 1995 American Institute of Physics.

Elastic Strain Field Distribution of a Self-Organized Growth Lensed-Shaped Quantum Dot by Finite Element Method

The stress and strain fields in self-organized growth coherent quantum dots (QD) structures are investigated in detail by two-dimension and three-dimension finite element analyses for lensed-shaped QDs. The nonobjective isolate quantum dot system is used. The calculated results can be directly used to evaluate the conductive band and valence band confinement potential and strain introduced by the effective mass of the charge carriers in strain QD.

Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier

The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density.

Electronic structure and optical property of semiconductor nanocrystallites

Semiconductor nanostructures show many special physical properties associated with quantum confinement effects, and have many applications in the opto-electronic and microelectronic fields. However, it is difficult to calculate their electronic states by the ordinary plane wave or linear combination of atomic orbital methods. In this paper, we review some of our works in this field, including semiconductor clusters, self-assembled quantum dots, and diluted magnetic semiconductor quantum dots. In semiconductor clusters we introduce energy bands and effective-mass Hamiltonian of wurtzite structure semiconductors, electronic structures and optical properties of spherical clusters, ellipsoidal clusters, and nanowires. In self-assembled quantum dots we introduce electronic structures and transport properties of quantum rings and quantum dots, and resonant tunneling of 3-dimensional quantum dots. In diluted magnetic semiconductor quantum dots we introduce magnetic-optical properties, and magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot. (C) 2004 Elsevier B.V. All rights reserved.

Spin splitting modulated by uniaxial stress in InAs nanowires

We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k center dot p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.

Microscopic Three-Body Force Effect on Nucleon-Nucleon Cross Sections in Symmetric Nuclear Matter

We provide a microscopic calculation of neutron-proton and proton-proton cross sections in symmetric nuclear matter at various densities, using the Brueckner-Hartee-Fock approximation scheme with the Argonne V-14 potential including the contribution of microscopic three-body force. We investigate separately the effects of three-body force on the effective mass and on the scattering amplitude. In the present calculation, the rearrangement contribution of three-body force is considered, which will reduce the neutron and proton effective mass, and depress the amplitude of cross section. The effect of three body force is shown to be repulsive, especially in high densities and large momenta, which will suppress the cross section markedly.

Hyperon coupling dependence of hadron matter properties in relativistic mean field model

The properties of hadronic matter at beta equilibrium in a wide range of densities are described by appropriate equations of state in the framework of the relativistic mean field model. Strange meson fields, namely the scalar meson field sigma*(975) and the vector meson field sigma*(1020), are included in the present work. We discuss and compare the results of the equation of state, nucleon effective mass, and strangeness fraction obtained by adopting the TM1, TMA, and GL parameter sets for nuclear sector and three different choices for the hyperon couplings. We find that the parameter set TM1 favours the onset of hyperons most, while at high densities the GL parameter set leads to the most hyperon-rich matter. For a certain parameter set (e.g. TM1), the most hyperon-rich matter is obtained for the hyperon potential model. The influence of the hyperon couplings on the effective mass of nucleon, is much weaker than that on the nucleon parameter set. The nonstrange mesons dominate essentially the global properties of dense hyperon matter. The hyperon potential model predicts the lowest value of the neutron star maximum mass of about 1.45 M-sun to be 0.4-0.5 M-sun lower than the prediction by using the other choices for hyperon couplings.

Isospin dependence of three-body force rearrangement contribution

Within the isospin-dependent Brueckner framework, we investigate the contribution of three-body force ( TBF) rearrangement to isospin symmetry potential as well as its momentum and density dependence. In particular, we investigate the TBF rearrangement effects on the isospin splitting of neutron and proton effective masses in neutron-rich nuclear matter. We show that the rearrangement contribution of TBF to neutron and proton single-particle potentials is repulsive and increases rapidly with increasing density and momentum. At low densities, the influence of the TBF rearrangement on symmetry potential is rather small, and the TBF rearrangement effect becomes more and more pronounced as the density rises. At high densities, the contribution of TBF rearrangement increases considerably the symmetry potential and modifies remarkably the momentum dependence of the symmetry potential. In both cases with and without including the TBF rearrangement contribution, the predicted neutron effective mass in neutron-rich matter is greater than the proton effective mass. The TBF rearrangement effect is to decrease remarkably both the proton and neutron effective masses, and reduce the magnitude of neutron-proton effective mass splitting in neutron-rich matter at high densities.

Probing balance energy using momentum- and isospin-dependent potential

Using the momentum- and isospin-dependent Boltmann-Uehling-Uhlenbeck (BUU) model, we investigate the transverse flow and balance energy in two isotopic colliding systems Ca-48+Fe-58 and Cr-48+Ni-58 by adopting different symmetry potentials. By comparing the results between the two colliding systems, we find that the difference between the balance energies of two isotopic systems can be considered as a sensitive probe to the density dependence of symmetry energy.

Three-body force rearrangement contribution to single nucleon potential in nuclear matter

Within the framework of microscopic Brueckner-Hatree-Fock, the contribution of the three-body force (TBF) rearrangement to the. single nucleon potential is calculated. The TBF rearrangement effects on the momentum and the density dependence of the single nucleon potential are investigated. The influence of the TBF rearrangement on the effective mass of nucleon is also discussed. It is shown that the rearrangement contribution of TBF is repulsive and momentum-dependent. The TBF rearrangement effect and its momentum dependence increase rapidly as increasing density and momentum. At high densities and high momenta, the repulsive rearrangement contribution reduces strongly the attraction of the single nucleon potential and enhances considerably the momentum dependence of the single nucleon potential.